NEC UPC8179TB-E3, UPC8179TB Datasheet

DATA SHEET
BIPOLAR ANALOG INTEGRATED CI RCUIT
µµµµ
SILICON MMIC LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 wideband matched IC. This low current amplifier operates on 3.0 V.
This IC is manufactured using NEC’s 30 GHz f process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
max
UHS0 (Ultra High Speed Process) silicon bipolar process. This
FEATURES
• Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V
• Supply voltage : VCC = 2.4 to 3.3 V
• High efficiency : P
• Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz
• Excellent isolation : ISL = 44 dB TYP. @ f = 1.0 GHz
• Operating frequency : 0.1 to 2.4 GHz (Output port LC matching)
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Light weight : 7 mg (Standard value)
APPLICATION
• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system
O (1 dB)
= +3.0 dBm TYP. @ f = 1.0 GHz
O (1 dB)
P
= +1.5 dBm TYP. @ f = 1.9 GHz
O (1 dB)
P
= +1.0 dBm TYP. @ f = 2.4 GHz
GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 15.5 dB TYP. @ f = 2.4 GHz
ISL = 42 dB TYP. @ f = 1.9 GHz ISL = 41 dB TYP. @ f = 2.4 GHz
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P14730EJ2V0DS00 (2nd edition) Date Published August 2000 N CP(K) Printed in Japan
Caution Electro-static sensitive devices
2000©
ORDERING INFORMATION
Part Number Package Marking Supplying Form
PC8179TB-E3 6-pin super minimold C3C Embossed tape 8 mm wide.
µ
1, 2, 3 pins face the perforat i on side of the tape. Qty 3 kpcs/reel.
µµµµ
PC8179TB
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
PIN CONNECTIONS
(Top View)
3
2
1
C3C
PC8179TB)
µ
(Bottom View)
4
5
6
4
5
6
3
2
1
Pin No. Pin Name
1 INPUT 2GND 3GND 4OUTPUT 5GND 6V
CC
2
Data Sheet P14730EJ2V0DS00
µµµµ
PC8179TB
PRODUCT LINE-UP (TA = +25 °C, VCC = V
Parameter
Part No.
PC8178TB 1.9 11 39
µ
PC8179TB 4.0 13.5 44 +3.0
µ
PC8128TB 2.8 12.5 39
µ
PC8151TB 4.2 12.5 38 +2.5 15 36 +1.5 15 34 +0.5
µ
PC8152TB 5.6 23 40
µ
Remark
(mA)
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
1.0 GHz output port matching frequency
G
CC
I
(dB)
P
ISL
(dB)
O(1 dB)
P (dBm)
4.0
4.0 13 39
4.5 19.5 38
out
= 3.0 V, ZS = ZL = 50
1.66 GHz output port matching frequency
P
G
ISL
(dB)
(dB)
−−−
−−−
O(1 dB)
P (dBm)
4.0 13 37
8.5 17.5 35
)
ΩΩΩΩ
1.9 GHz output port matching frequency
P
G
ISL
(dB)
(dB)
11.5 40
15.5 42 +1.5 15.5 41 +1.0 C3C
SYSTEM APPLICATION EXAMPLE
Location examples in digital cellular
Low Noise Tr.
RX
2.4 GHz output port matching frequency
O(1 dB)
P (dBm)
7.0 11.5 38
4.0
8.5
P
G
(dB)
−−−
−−−
−−−
DEMOD.
ISL
(dB)
O(1 dB)
P (dBm)
7.5 C3B
I
Q
Marking
C2P C2U C2V
SW
TX
PA
÷N PLL
PLL
I
0°
φ
90°
Q
These ICs can be added to your system around V parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation.
Data Sheet P14730EJ2V0DS00
3
PIN EXPLANATION
µµµµ
PC8179TB
Pin No.
Pin Name
1 INPUT
GND 0
2 3 5
4 OUTPUT voltage
Applied Voltage (V)
as same as V through external inductor
Pin Voltage
Note
(V)
CC
1.09
Function and Applications Internal Equivalent Circ ui t
Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connec­tion over a wide band. This pin must be coupled to signal source with capacitor for DC c ut.
Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be c on­nected together with wide ground pattern to decrease impedance defference.
Signal output pin. This pin i s de­signed as collector output. Due to the high impedance output, this pin should be externall y equipped with LC matching circuit to next s tage. For L, a size 1005 chip inductor c an be chosen.
3
1
6
4
2
5
6VCC2.4 to 3.3
Pin voltage is measured at V
Note
CC
Power supply pin. This pin should be externally equipped with bypass capacit or to minimize its im pedanc e.
= 3.0 V.
4
Data Sheet P14730EJ2V0DS00
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Conditions Ratings Unit
µµµµ
PC8179TB
Supply Voltage V Circuit Current I Power Dissipation P
CC
CC
TA = +25 °C, Pin 4, Pin 6 3.6 V TA = +25 °C 15 mA
D
Mounted on double sided copper clad 50 × 50 × 1.6
mm epoxy glass PWB (T Operating Ambient Temperature T Storage Temperature T Input Power P
A
stg
in
TA = +25 °C +5 dBm
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit Remarks
Supply Voltage V
Operating Ambient Temperature T
CC
A
2.4 3.0 3.3 V The same voltage should be applied
40 +25 +85 °C
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
A
= +25 °C, VCC = V
A
= +85 °C)
out
= 3.0 V, ZS = ZL = 50
270 mW
40 to +85 °C
55 to +150 °C
to pin 4 and pin 6.
, at LC matched frequency)
ΩΩΩΩ
Circuit Current I Power Gain G
CC
No signal 2.9 4.0 5.4 mA
P
f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, P f = 2.4 GHz, P
in
= −30 dBm
in
= −30 dBm
Isolation ISL f = 1.0 GHz, Pin = −30 dBm
in
= −30 dBm
in
= −30 dBm
1 dB Gain Compression Output Power
P
o(1dB)
f = 1.9 GHz, P f = 2.4 GHz, P
f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz
Noise Figure NF f = 1.0 GHz
f = 1.9 GHz f = 2.4 GHz
Input Return Loss (Without matching circ ui t)
RL
in
f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, P f = 2.4 GHz, P
in
= −30 dBm
in
= −30 dBm
11.0
13.0
13.0 39
37 36
0.5
2.0
3.0
4 4 6
13.5
15.5
15.5 44
42 41
+3.0 +1.5 +1.0
5.0
5.0
5.0 7
7 9
15.5
17.5
17.5
6.5
6.5
6.5
dB
dB
dBm
dB
dB
Data Sheet P14730EJ2V0DS00
5
TEST CIRCUITS
<1> f = 1.0 GHz
<2> f = 1.9 GHz
V
CC
C
3
Output port matching circuit
1
6
50
IN OUT
C
1
1
L
C
4
50
2
2, 3, 5
V
CC
µµµµ
PC8179TB
<3> f = 2.4 GHz
C
4
C
5
C
6
Output port matching circuit
L
6
50
IN OUT
1
C
1
1
C
4
50
2
C
3
2, 3, 5
V
CC
C
3
C
4
C
5
Output port matching circuit
L
6
50
IN OUT
C
1
1
4
1
50
C
L
2
2
2, 3, 5
6
Data Sheet P14730EJ2V0DS00
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
<1> f = 1.0 GHz
AMP-4
Top View
OUT
C3C
Connector
L
C
2
IN
C
1
1
µµµµ
PC8179TB
Connector
Mounting direction
COMPONENT LIST
1.0 GHz Output Port Matc hi ng
1
C
2
C
3
C
1
L
1 000 pF
0.75 pF 10 pF
12 nH
C
3
Data Sheet P14730EJ2V0DS00
7
<2> f = 1.9 GHz
Top View
C3C
Mounting direction
Connector
µµµµ
PC8179TB
AMP-4
L
C
2
C
IN
C
1
C
4
C
5
1
C
3
6
OUT
Connector
COMPONENT LIST
1.9 GHz Output Port Matc hi ng
C1, C3, C5, C
2
C
4
C
1
L
6
1 000 pF
0.75 pF 10 pF
3.3 nH
8
Data Sheet P14730EJ2V0DS00
<3> f = 2.4 GHz
Top View
C3C
Mounting direction
Connector
µµµµ
PC8179TB
AMP-4
L
C
L
IN
C
1
C
C
2
3
4
2
1
C
5
OUT
Connector
COMPONENT LIST
2.4 GHz Output Port Matc hi ng
C1, C2, C4, C
3
C
1
L
2
L
NOTES
(∗1) 42 × 35 × 0.4 mm double sided copper clad polyimide board (∗2) Solder plated on pattern (∗3) Back side: GND pattern (∗4) : Through holes
5
1 000 pF
10 pF
1.8 nH
2.7 nH
Data Sheet P14730EJ2V0DS00
9
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