The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC can realize low current consumption with external chip inductor which can not be realized on internal 50
wideband matched IC. This low current amplifier operates on 3.0 V.
This IC is manufactured using NEC’s 30 GHz f
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
max
UHS0 (Ultra High Speed Process) silicon bipolar process. This
Ω
FEATURES
• Low current consumption: ICC = 4.0 mA TYP. @ VCC = 3.0 V
• Supply voltage: VCC = 2.4 to 3.3 V
• High efficiency: P
• Power gain: GP = 13.5 dB TYP. @ f = 1.0 GHz
• Excellent isolation: ISL = 44 dB TYP. @ f = 1.0 GHz
• Operating frequency: 0.1 to 2.4 GHz (Output port LC matching)
PC8179TB-E36-pin super minimoldC3CEmbossed tape 8 mm wide.
µ
1, 2, 3 pins face the perforat i on side of the tape.
Qty 3 kpcs/reel.
µµµµ
PC8179TB
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
PIN CONNECTIONS
(Top View)
3
2
1
C3C
PC8179TB)
µ
(Bottom View)
4
5
6
4
5
6
3
2
1
Pin No.Pin Name
1INPUT
2GND
3GND
4OUTPUT
5GND
6V
CC
2
Data Sheet P14730EJ2V0DS00
µµµµ
PC8179TB
PRODUCT LINE-UP (TA = +25 °C, VCC = V
Parameter
Part No.
PC8178TB1.91139
µ
PC8179TB4.013.544+3.0
µ
PC8128TB2.812.539
µ
PC8151TB4.212.538+2.51536+1.51534+0.5
µ
PC8152TB5.62340
µ
Remark
(mA)
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
1.0 GHz output port
matching frequency
G
CC
I
(dB)
P
ISL
(dB)
O(1 dB)
P
(dBm)
4.0
−
4.01339
−
4.519.538
−
out
= 3.0 V, ZS = ZL = 50
1.66 GHz output port
matching frequency
P
G
ISL
(dB)
(dB)
−−−
−−−
O(1 dB)
P
(dBm)
4.01337
−
8.517.535
−
)
ΩΩΩΩ
1.9 GHz output port
matching frequency
P
G
ISL
(dB)
(dB)
11.540
15.542+1.515.541+1.0C3C
SYSTEM APPLICATION EXAMPLE
Location examples in digital cellular
Low Noise Tr.
RX
2.4 GHz output port
matching frequency
O(1 dB)
P
(dBm)
7.011.538
−
4.0
−
8.5
−
P
G
(dB)
−−−
−−−
−−−
DEMOD.
ISL
(dB)
O(1 dB)
P
(dBm)
7.5C3B
−
I
Q
Marking
C2P
C2U
C2V
SW
TX
PA
÷NPLL
PLL
I
0°
φ
90°
Q
These ICs can be added to your system around V parts, when you need more isolation or gain. The application
herein, however, shows only examples, therefore the application can depend on your kit evaluation.
Data Sheet P14730EJ2V0DS00
3
PIN EXPLANATION
µµµµ
PC8179TB
Pin
No.
Pin
Name
1INPUT
GND0
2
3
5
4OUTPUTvoltage
Applied
Voltage
(V)
as same
as V
through
external
inductor
Pin
Voltage
Note
(V)
−
CC
1.09
−
−
Function and ApplicationsInternal Equivalent Circ ui t
Signal input pin. A internal
matching circuit, configured with
resisters, enables 50 Ω connection over a wide band. This pin
must be coupled to signal source
with capacitor for DC c ut.
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
All the ground pins must be c onnected together with wide ground
pattern to decrease impedance
defference.
Signal output pin. This pin i s designed as collector output. Due
to the high impedance output,
this pin should be externall y
equipped with LC matching
circuit to next s tage. For L, a
size 1005 chip inductor c an be
chosen.
↓
3
1
6
4
2
5
6VCC2.4 to 3.3
Pin voltage is measured at V
Note
−
CC
Power supply pin. This pin
should be externally equipped
with bypass capacit or to
minimize its im pedanc e.
= 3.0 V.
4
Data Sheet P14730EJ2V0DS00
ABSOLUTE MAXIMUM RATINGS
ParameterSymbolConditionsRatingsUnit
µµµµ
PC8179TB
Supply VoltageV
Circuit CurrentI
Power DissipationP