NEC UPC8163TB-E3, UPC8163TB Datasheet

DATA SHEET

BIPOLAR ANALOG INTEGRATED CI RCUIT

µ

µ

PC8163TB

µµ

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER

FOR CELLULAR TELEPHONE

DESCRIPTION

The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone

transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package.

The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Recommended operating frequency : f

• Supply voltage : V

• High-density surface mounting : 6-pin super minimold package

• Higher IP

• Minimized carrier leakage : Due to double balanced mixer

3

RFout

= 0.8 GHz to 2.0 GHz, f

CC

= 2.7 to 3.3 V

: OIP3 = +9.5 dBm @ f

RFout

IFin

= 50 MHz to 300 MHz

= 830 MHz

APPLICATIONS

• Digital cellular phones

ORDERING INFORMATION

Part Number Package Supplying Form

µ

PC8163TB-E3 6-pin super minimold

Remark

To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:

PC8163TB)

µ

Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perf oration side.
Qty 3 kp/reel

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P13636EJ2V0DS00 (2nd edition)
Date Published June 1999 N CP(K)
Printed in Japan

Caution Electro-static sensitive device

The mark shows major revised points.

1998, 1999©

PIN CONNECTIONS

(Top View)

3

µµµµ

PC8163TB

(Bottom View)

4

4

3

Pin No. Pin Name

1 IFinput
2GND

2

1

C2Y

5

5

6

6

SERIES PRODUCTS (TA = +25°C, VCC = V

Type Part No. VCC (V)

3

High IP

Low Power ConsumptionµPC8109TB

Higher IP

3

PC8106TB

µ

PC8163TB

µ

RFout

= 3.0 V, ZL = ZS = 50

CC

I

(mA)

2.7 to

5.5

2.7 to

5.5

2.7 to

3.3

9 9 7 –2 –4 +5.5 +2.0

5 6 4 –5.5 –7.5 +1.5 –1.0

16.5 9 5.5 0.5 –2 +9.5 +6.0

CG1
(dB)

2

1

)

ΩΩΩΩ

CG2
(dB)

O(sat)

P

(dBm)

3 LOinput
4GND
5V
6 RFoutput

O(sat)

1

P

2

(dBm)

CC

OIP31
(dBm)

OIP32
(dBm)

Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTERISTICS for

the test conditions.

BLOCK DIAGRAM (FOR THE

PC8163TB)

µµµµ

LOinput

GND

IFinput

(Top View)

GND

V

CC

RFoutput

2

Data Sheet P13636EJ2V0DS00

µµµµ

PC8163TB

SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM)

RX

TX

SW

PA

VCO

µ

PC8163TB

÷N PLL

Phase

shifter

0˚

90˚

DEMO.

PLL

I
Q

I

Q

Data Sheet P13636EJ2V0DS00

3

PIN EXPLANATION

µµµµ

PC8163TB

Pin
No.

1 IFinput

2
4

3 LOinput

5VCC2.7 to 3.3
6 RFoutput Same

Pin

Name

GND 0

Applied
Voltage

V





bias as

CC

V
through
external
inductor

Pin

Voltage

Note

V

1.2



2.1 Local input pin. Recommendable input level




This pin is IF input to doubl e bal anced mixer
(DBM). The input is designed as hi gh
impedance. The circuit contributes to
suppress spurious signal . Also this
symmetrical ci rcuit can keep specified
performance insensitive to process-condition
distribution. For above reason, double
balanced mixer is adopted.

GND pin. Ground pattern on the board
should be formed as wide as poss i bl e.
Track Length should be kept as short as
possible to minimiz e ground i m pedance.

is –10 to 0 dBm.
Supply voltage pin.
This pin is RF output from DB M . This pin is

designed as open collector. Due to the high
impedance output, this pi n should be
externally equipped with LC mat c hi ng circuit
to next stage.

Function and Explanation Equivalent Circuit

5
6

3

1

2

Each pin voltage is measured with V

Note

CC

= V

RFout

= 3.0 V.

4

Data Sheet P13636EJ2V0DS00

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Test Conditions Rating Unit

µµµµ

PC8163TB

Supply Voltage V
Power Dissipation of Package P

Operating Ambient Temperature T
Storage Temperature T
Maximum Input Power P

CC

D

A

stg

in

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Supply Voltage V

Operating Ambient Temperature T
Local Input Level P
RF Output Frequency f
IF Input Frequency f

CC

A

LOin

RFout

IFin

ELECTRICAL CHARACTERISTICS
(TA = +25

C, VCC = V

°°°°

RFout

= 3.0 V, f

Parameter Symbol Conditions MIN. TYP. MAX. Unit

IFin

= 150 MHz, P

TA = +25°C, Pin 5 and 6 3.6 V
Mounted on double-sided copperclad 50 × 50 × 1.6

200 mW

mm epoxy glass PWB

A

= +85°C

T

40 to +85 °C

−

55 to +150 °C

−

+10 dB m

The same voltage should be applied

2.7 3.0 3.3 V

to pin 5 and 6

40 +25 +85 ° C

−

Zs = 50 Ω (without matching) –10 –5 0 dBm
With external matching c i rcuit 0.8 – 2.0 GHz

50 – 300 MHz

LOin

= –5 dBm)

Circuit Current I
Conversion Gain 1 CG1 f
Conversion Gain 2 CG2 f
Maximum RF Output Power 1 P
Maximum RF Output Power 2 P

CC

O(sat)

1f

O(sat)

2f

No Signal 11.5 16.5 23 mA

RFout

= 830 MHz, P

RFout

= 1.9 GHz, P

RFout

= 830 MHz, P

RFout

= 1.9 GHz, P

IFin

= –20 dBm 6 9 12 dB

IFin

= –20 dBm 2.5 5.5 8.5 dB

IFin

= 0 dBm –1.5 0.5 – dBm

IFin

= 0 dBm –4.5 –2 – dBm

OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25

C, VCC = V

°°°°

RFout

= 3.0 V, P

Parameter Symbol Conditions Data Unit

Point

Intercept Point

SSB Noise Figure SSB NF f

LOin

= –5 dBm)

IFin

IIP3 1f

IIP
OIP3 1f
OIP

f

1 = 150.0 MHz

IFin

f

3

2

3

2

2 = 150.4 MHz

IFin

f

1 = 150.0 MHz

IFin

f

2 = 150.4 MHz

RFout

= 830 MHz, f

IFin

= 150 MHz 12.5 dB

RFout

= 830 MHz 0.5Input Third Order Distortion Int ercept

RFout

= 1.9 GHz 0.5

f

RFout

= 830 MHz +9.5Output Third-Order Distortion

RFout

= 1.9 GHz +6.0

f

dBm

dBm

Data Sheet P13636EJ2V0DS00

5