The PPC8128TA,
amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip
inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current
amplifiers operate on 3.0 V.
These ICs are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
PC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer
P
PPPP
PC8151TA,
PPPP
PC8152TA
FEATURES
• Low current consumption: PPC8128TA; ICC = 2.8 mA TYP. @ VCC = 3.0 V
PPC8151TA; ICC = 4.2 mA TYP. @ VCC = 3.0 V
PPC8152TA; ICC = 5.6 mA TYP. @ VCC = 3.0 V
• Supply voltage: VCC = 2.4 to 3.3 V
• High efficiency: PPC8128TA; P
PPC8151TA; P
PPC8152TA; P
• Power gain variation: PPC8128TA, 8151TA ; GP = 12.5 dB TYP. @ f = 1 GHz
PPC8152TA; GP = 23.0 dB TYP. @ f = 1 GHz
• Operating frequency: 100 to 1 900 MHz (Output port LC matching)
• Excellent isolation: PPC8128TA; ISL = 39 dB TYP. @ f = 1 GHz
: PPC8151TA; ISL = 38 dB TYP. @ f = 1 GHz
: PPC8152TA; ISL = 40 dB TYP. @ f = 1 GHz
APPLICATION
• Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones
O (1 dB)
= ð4.0 dBm TYP. @ f = 1 GHz
O (1 dB)
= +2.5 dBm TYP. @ f = 1 GHz
O (1 dB)
= ð4.5 dBm TYP. @ f = 1 GHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14637EJ1V0DS00 (1st edition)
Date Published April 2000 N CP(K)
Printed in Japan
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
out
= 3.0 V, ZS = ZL = 50
1.66 GHz output port
matching frequency
G
(dB)
P
ISL
(dB)
O (1 dB)
P
(dB)
4.01337
ð
8.517.535
ð
)
::::
1.90 GHz output port
matching frequency
G
(dB)
P
ISL
(dB)
O (1 dB)
P
(dB)
4.06-pin minimoldC2P
ð
8.56-pin minimoldC2V
ð
Package
SYSTEM APPLICATION EXAMPLE
Location examples in digital cellular
Low Noise Tr.
RX
DEMOD.
I
Q
Marking
SW
TX
PA
÷NPLL
PLL
I
0°
φ
90°
Q
These ICs can be added to your system around ▲ parts, when you need more isolation or gain. The application
herein, however, shows only examples, therefore the application can depend on your kit evaluation.
Preliminary Data Sheet P14637EJ1V0DS00
3
PIN EXPLANATION
PPPP
PC8128TA,
PPPP
PC8151TA,
PPPP
PC8152TA
Pin
No.
Pin
Name
1INPUT
2
GND0
3
5
4OUTPUTvoltage
Applied
Voltage
(V)
as same
as V
through
external
inductor
Pin
Voltage
Note
(V)
ð
CC
0.9
1.06
0.80
ð
ð
Function and ApplicationsInternal Equivalent Circ ui t
PC8128TA, PC8151TA
Signal input pin. A internal
matching circuit, configured with
resistors, enables 50 : connection over a wide band. This pin
must be coupled to signal source
with capacitor for DC c ut.
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
All the ground pins must be c onnected together with wide ground
pattern to decrease impedance
defference.
Signal output pin. This pin i s designed as collector output. Due
to the high impedance output,
this pin should be externall y
equipped with LC matching
circuit to next s tage. For L, a
size 1005 chip in-ductor c an be
chosen.
µµ
64
1
2
53
PC8152TA
µ
1
↓
↓
6
4
6VCC2.4 to 3.3
Pin voltage is measured at V
Note
ð
Power supply pin. This pin
should be externally equipped
with bypass capacit or to
minimize its inpedanc e.
CC
= 3.0 V. Above: PPC8128TA, Center: PPC8151TA, Below: PPC8152TA
23
5
4
Preliminary Data Sheet P14637EJ1V0DS00
ABSOLUTE MAXIMUM RATINGS
ParameterSymbolConditionsRatingsUnit
PPPP
PC8128TA,
PPPP
PC8151TA,
PPPP
PC8152TA
Supply VoltageV
Total Circuit CurrentI
Total Power Dissipat i onP