NEC UPC8109TB, UPC8109TB-E3, UPC8109T-E3, UPC8109T, UPC8106TB-E3 Datasheet

DATA SHEET

BIPOLAR ANALOG INTEGRATED CI RCUITS

µµµµ

PC8106TB,

µµµµ

PC8109TB

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER

FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION

The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size.

The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process. This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Recommended operating frequency : f

• Supply voltage : VCC = 2.7 to 5.5 V

• High-density surface mounting : 6-pin super minimold package

• Low current consumption : ICC = 9 mA TYP. @ µPC8106TB

• Minimized carrier leakage : Due to double balanced mixer

• Built-in power save function

RFout

= 0.4 GHz to 2.0 GHz, f

ICC = 5 mA TYP. @ µPC8109TB

IFin

= 100 MHz to 400 MHz

APPLICATION

• Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)

ORDERING INFORMATION

Part Number Markings Product Type Package Supplying Form

µ

PC8106TB-E3 C2D High IP

µ

PC8109TB-E3 C2G Low current consumption

Remark

Document No. P12770EJ2V0DS00 (2nd edition) Date Published April 1999 N CP(K) Printed in Japan

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

3

PC8106TB, µPC8109TB)

µ

Caution Electro-static sensitive devices

6-pin super minimold

Embossed tape 8 mm wide. Pin 1, 2, 3 face to tape perf oration side. QTY 3 kp/Reel.

1997, 1999©

PIN CONNECTIONS

3

2

1

4

5

6

(Top view)

Marking is an example of PC8106TB.

4

5

6

3

2

1

(Bottom view)

C 2 D

µ

µµµµ

PC8106TB,

Pin No. Pin Name

1 IFinput 2GND 3 LOinput 4PS 5V 6 RFoutput

CC

µµµµ

PC8109TB

SERIES PRODUCTS (TA = +25

TYPE PRODUCT NAME VCC (V)

3

High IP Low power consumption Higher IP

3

PC8106TB 2.7 to 5.5 9 9 7

µ

PC8109TB 2.7 to 5.5 5 6 4

µ

PC8163TB 2.7 to 3. 3 16.5 9 5.5 0.5 –2 +9.5 +6

µ

C, VCC = VPS = V

°°°°

RFout

= 3.0 V, ZL = ZS = 50

CC

I

(mA)

CG1

(dB)

CG2 (dB)

)

ΩΩΩΩ

O(sat)

P (dBm)

2

−

5.5

−

O(sat)

1

P

2

(dBm)

4 +5.5 +2.0

−

7.5 +1.5

−

OIP31 (dBm)

Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTER-

ISTICS for the test conditions.

BLOCK DIAGRAM (FOR THE

PC8106TB AND

µµµµ

LO input

GND

IF input

µµµµ

(Top view)

PC8109TB)

PS

CC

V

RF output

OIP32 (dBm)

1.0

−

2

Data Sheet P12770EJ2V0DS00

µµµµ

PC8106TB,

µµµµ

PC8109TB

SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEMS)

PHS, DECT

RX

SW

TX

PA

Analog cellular telephone

RX

SW

VCO

PC8106TB

µ

VCO

÷N PLL

0°

Phase shifter

90°

DEMO.

PLL

FM

DEMO.

I

Q

I

Q

TX

PA

PC8109TB

µ

PLL

MOD.

Data Sheet P12770EJ2V0DS00

3

µµµµ

PC8106TB,

µµµµ

PC8109TB

PIN FUNCTIONS (FOR THE

Pin No.

Name

1 IFinput

2GND 0

3 LOinput

5VCC2.7 to 5.5 6 RFoutput Same bias

4PSVCC/GND

Applied Voltage

(V)

−

CC

as V through external inductor

Pin Voltage

(V)

1.3 This pin is IF input to double bal anc ed

−

2.4 Local input pin. Recommendable input

−

PC8106TB AND

µµµµ

Note

Function and Explanation Equivalent Circuit

mixer (DBM). The input is des i gned as high impedance. The circuit contributes to suppress spurious signal. Also this symmetrical circuit c an keep specified performance insensitive to process-condition distribution. For above reason, double balanced mixer is adopted.

GND pin. Ground pattern on the board should be formed as wide as poss i bl e. Track Length should be kept as short as possible to minimi ze ground impedance.

level is −10 to 0 dBm. Supply voltage pin. This pin is RF output from DB M . This

pin is designed as open collec tor. Due to the high impedance output, this pin should be externally equipped wit h LC matching circuit t o next stage.

Power save control pin. B i as controls operation as follows.

PC8109TB)

µµµµ

5 6

3

1

2

VCC

5

Each pin voltage is measured with V

Note

Pin bias Cont rol

CC

V GND Power Save

CC

= V

PS

= V

Operation

RFout

= 3.0 V.

GND

4

2

4

Data Sheet P12770EJ2V0DS00

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Test Conditions Rating Unit

µµµµ

PC8106TB,

µµµµ

PC8109TB

Supply Votage V PS pin Input Voltage V Power Dissipation of

Package

Operating Ambient Temperature T Storage Temperature T Maximum Input Power P

CC

PS

P

TA = +25 °C, Pin 5 and 6 6.0 V TA = +25 °C 6.0 V

D

Mounted on double-sided copper-clad 50 × 50

1.6 mm epoxy glass P WB

A

T

= +85 °C

A

stg

in

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol MIN. TYP. MAX. Unit Note

Supply Voltage V

Operating Ambient Temperature T Local Input Level P RF Output Frequency f IF Input Frequency f

CC

LOin

RFout

IFin

2.7 3.0 5.5 V The same voltage should be supplied t o

A

40 +25 +85 °C

−

10

−

0.4

100

×

pin 5 and 6

S

50dBmZ

−

2.0 GHz With external m atching circuit

400 MHz

= 50 Ω (without matching)

200 mW

40 to +85 °C

−

55 to +150 °C

−

+10 dBm

ELECTRICAL CHARACTERISTICS

A

= +25 °C, VCC = V

(T

RFout

= 3.0 V, f

specified)

Parameter Symbol Conditions

Circuit Current I Circuit Current in Power-

save Mode Conversion Gain 1 CG1 f Conversion Gain 2 CG2 f Maximum RF Output Power 1 P Maximum RF Output Power 2 P

CC

ICC(PS) VPS = 0 V

O(sat)

1f

O(sat)

2f

IFin

= 240 MHz, P

LOin

=

5 dBm, and VPS

−−−−

PC8106TB

µ

2.7 V unless otherwise

≥≥≥≥

PC8109TB

µ

Unit

MIN. TYP. MAX. MIN. TYP. MAX.

No signal 4.5 9 13.5 2.5 5 8.0 mA

RFout

= 0.9 GHz, P

RFout

= 1.9 GHz, P

RFout

= 0.9 GHz, P

RFout

= 1.9 GHz, P

−−

IFin

= −30 dBm 6 9 12 3 6 9 dB

IFin

= −30 dBm 4 7 10 1 4 7 dB

IFin

= 0 dBm

IFin

= 0 dBm

4

−

6.5

−

10

2

−

4

−

−−

7.5−5.5

−−

−−10−

7.5

10

µ

dBm

−

dBm

−

A

Data Sheet P12770EJ2V0DS00

5

OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY

A

= +25 °C, VCC = V

(T

RFout

= 3.0 V, P

LOin

=

5 dBm, and VPS

−−−−

2.7 V unless otherwise mentioned)

≥≥≥≥

µµµµ

PC8106TB,

µµµµ

PC8109TB

Parameter Symbol Conditions

OIP31f

Intercept Point

Third-Order Intermodulation Distortion 1

Third-Order Intermodulation Distortion 2

SSB Noise Figure SSBNF f

Rise time T

Response Time

Fall time T

3

2f

OIP

IM31f

IM32

PS(rise)

PS(fall)

Reference Value

PC8106TBµPC8109TB

µ

IFin1

= 240.0 MHz f

IFin2

= 240.4 MHz f

IFint

= 240.0 MHz

f

IFin2

= 240.4 MHz

f

IFin

= −20 dBm

P

RFout

= 0.9 GHz, f VPS: GND → V VPS: VCC → GND 2.0 2.0

RFout

= 0.9 GHz +5.5 +1.5 dBmOutput Third-Order Distortion

RFout

= 1.9 GHz +2.0

RFout

= 0.9 GHz

RFout

f

= 1.9 GHz

IFin

= 240 MHz 8.5 8.5 dB

CC

31

−

30

−

2.0 2.0

1.0

−

29 dBc

28 dBc

Unit

µ µ

APPLICATION CIRCUIT EXAMPLE CHARACTERSISTICS FOR REFERENCE PURPOSE ONLY

A

= +25 °C, VCC = VPS = V

(T

Parameter Symbol Conditions

Conversion Gain CG f

Maximum RF Output Power P

RFout

= 3.0 V, f

O(sat)

IFin

= 130 MHz, f

RFout

= 1.5 GHz, with applicati on circuit

example

RFout

f

= 1.5 GHz, with applicati on circuit

example

LOin

= 1630 MHz, P

LOin

=

5 dBm)

−−−−

Reference Value

PC8106TB

µ

7dB

3.5 dBm

−

Unit

sPower Save s

6

Data Sheet P12770EJ2V0DS00

µµµµ

PC8106TB,

µµµµ

PC8109TB

TEST CIRCUIT 1 (RF = 900 MHz, for the

RF = 900 MHz, matched

Spectrum Analyzer

50 Ω

10 000 pF

V

CC

C

4

1000 pF 1 pF

C

5

C

6

C

3

1 000 pF

PC8106TB and

µµµµ

6

L

6.8 nH

*

RFoutputPSIFinput

5

CC

V

4

PC8109TB)

µµµµ

GND

LOinput

Signal Generator

100 pF

1

C

2

3

1

100 pF

C

2

50 Ω

Signal Generator

50 Ω

P

Loin

= –5 dBm

* In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching

circuit.

EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD

RF Connector →

RFOUT

1 000 pF

C

6

C

3

1 000 pF

6.8 nH

1 pF

L

5

C

1

IFIN

100 pF

C

1

P/S

1 000 pF

PC8106TB

µ

C

4

10 000 pF

LO

100 pF

C

2

IN

Data Sheet P12770EJ2V0DS00

7

COMPONENT LIST

Form Symbol Value

Chip capacitor

Through capacitor C Chip inductor L

6.8 nH: Murata Mfg. Co., Ltd. LQP31A6N8J04

Note

Notes on the board

35 × 42 × 0.4 mm polyimide board, 35

1.

Ground pattern on rear of the board

2.

Solder plated patterns

3.

4.

5.

: Through holes

C6 is for RF short on the board pattern

C1, C C3, C

C

µµµµ

PC8106TB,

2

6

5

4

100 pF

1 000 pF

1 pF

10 000 pF

Note

6.8 nH

m double-sided copper clad

µ

µµµµ

PC8109TB

8

Data Sheet P12770EJ2V0DS00