NEC UPC8105GR-E1, UPC8105GR Datasheet

DATA SHEET
BIPOLAR ANALOG INTEGRATED CI RCUIT
PC8105GR
µµµµ
400 MHz QUADRATURE MODULATOR
FOR DIGITAL MOBILE COMMUNICATION
DESCRIPTION
The µPC8105GR is a sillicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This modulator housed in a 16 pin plastic SSOP that is easy to install and contributes to miniaturizing the system.
The device has power save function and can operates 2.7 to 5.5 V supply voltage to realize low power consumption.
FEATURES
Internal 90° phase shifter is accurate over an IF range from 100 MHz to 400 MHz.
Wide supply voltage range: VCC = 2.7 to 5.5 V.
Low operation current: ICC = 16 mA (typ.).
16 pin plastic SSOP suitable for high density surface mounting.
Low current in sleep mode
APPLICATION
IF modulator for Digital cellular phone (PDC, IS-54, GSM etc..)
IF modulator for Digital cordless phone (PHS, PCS etc..)
ORDERING INFORMATION
PART NUMBER PACKAGE SUPPLYING FORM
µ
PC8105GR-E1 16 pin plastic SSOP (225 m i l ) Carrier tape width 12 mm. Q’ty 2. 5 kp/Reel
Pin 1 indicated pull-out direc tion of tape.
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
PC8105GR)
µ
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P10807EJ3V0DS00 (3rd edition) Date Published October 1999 N CP(K) Printed in Japan
Caution electro-static sensitive device
The mark shows major revised points.
©
1995, 1999
SERIES PRODUCTS
µµµµ
PC8105GR
SERIES TYPE
150 MHz Quadrature MOD
Up-Con + Quadrature MOD 400 MHz Quadrature MOD
Remark:
As for detail information of series products, please refer to each data sheet.
PART NUMBER
PC8101GR 100 to
µ
PC8104GR 100 to 400 DC to 10 800 to 1900 Digital Comm.
µ
PC8105GR 100 to 400 DC to 10 External Digital Comm.
µ
f LO1 in
(MHz)
300
f MODout
(MHz)
50 to 150 DC to 0.5 External CT2, Digital Comm.
f I/Q
(MHz)
INTERNAL BLOCK DIAGRAM AND PIN CONNECTIONS (Top View)
LO
LO
GND
I-INPUT
I-INPUT
Q-INPUT
1
in
90˚
in
2
3
4
5
6
Phase Sifter
REG.
V
16
CC
15
Power Save
14
GND
13
GND
12
MOD
11
N.C.
Up-Converter f RFout (MHz)
out
APPLICATIONS
Q-INPUT
GND
APPLICATION EXAMPLE
[Digital cellular hand-held phone]
Low-noise transistor
RX
SW
TX
PA
10
7
8
÷N
VCO
PLL
µ
Phase shifter
µ
PC8106T
N.C.
9
N.C.
PC8105GR
90˚
DEMO
PLL
I
Q
I
Q
2
Data Sheet P10807EJ3V0DS00
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATING UNIT TEST CONDITIONS
µµµµ
PC8105GR
Supply Voltage V Power Save Voltage V Power Dissipation P Operating Temperature T Storage Temperature T
: Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass board
*1
CC
PS
D
op
stg
6.0 V TA = +25 °C
6.0 V TA = +25 °C
310 mW
40 to +85
55 to +150
RECOMMENDED OPERATING CONDITIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Supply Voltage V Operating Temperature T Modulator Output Frequency f LO1 Input Frequency f I/Q Input Frequency f
ELECTRICAL CHARACTERISTICS (TA = +25
CC
A
MODout
LO1in
I/Qin
2.7 3.0 5.5 V 40 +25 +85
100 400 MHz
DC 10 MHz P
C, VCC = 3.0 V, Unless Otherwise Specified VPS
°°°°
A
T
= +85 °C
C
°
C
°
C
°
LOin
P
= −10 dBm
I/Qin
= 600 mV
*1
p-p
MAX (Single ended)
1.8 V)
≥≥≥≥
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Circuit Current I Circuit Current at Power
CC
10 16 21 m A No input signal
ICC(PS) 0.1 5
AVPS ≤ 1.0 V
µ
Save Mode Output Power P LO Carrier Leak LOL Image Rejection
MODout
ImR
21.0
16.5 40
40
12.0 dBm
30 dBc
30 dBc
I/Q DC = 1.5 V
I/Qin
= 500 mV
P
(Side Band Leak)
p-p
(Single ended)
Data Sheet P10807EJ3V0DS00
3
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25
C, VCC = 3.0 V, Unless Otherwise Specified VPS
°°°°
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
1.8 V)
≥≥≥≥
µµµµ
PC8105GR
I/Q 3rd Order
IM
Intermodulation Distort i on I/Q Input Impedance Z I/Q Bias Current I LO1 Input VSWR Z Power Save Rise Time T Power Save Fall Time T
3I/Q
I/Q
I/Q
LO
PS(RISE)
PS(FALL)
50
30 dBc I/Q DC = 1.5 V
20 k
5
1.2:1 25 25
A
µ
I/Qin
= 500 mV
P I/Q DC = 1.5 V
I/Qin
= 500 mV
P (I → I, Q → Q)
p-p
p-p
sVPS(OFF) → VPS(ON)
µ
sVPS(ON) → VPS(OFF)
µ
(Single ended)
(Single ended)
4
Data Sheet P10807EJ3V0DS00
PIN EXPLANATION
µµµµ
PC8105GR
PIN NO.
ASSIGN­MENT
1LOin
2LOin
SUPPLY VOL. (V)
3GND0
8
4IV
CC
PIN VOL.(V)
FUNCTION AND APPLICATION EQUIPMENT CIRCUIT
0 LO input for phase shifter.
This input impedance is 50 matched internally.
1
50
2.4 Bypass of LO input. This pin is grounded through
2
internal capacitor. Open in case of single ended.
Connect to the ground with minimum inductance. Track length should be kept as short as possible.
/2
Input for I signal. This in put
impedance is larger than 20 kΩ. Relations between amplitude and
CC
/2 bias of input signal are
V following.
VCC/2 (v) Amp. (mV
1.35 400
1.5 600
1.75 1000
p-p
)
*1
4 5
5IV
6QV
7QV
12 MODout
CC
/2
CC
/2
CC
/2
Input for I signal. This in put
impedance is larger than 20 kΩ.
CC
/2 biased DC signal should be
V input.
Input for Q signal. This i n put
impedance is larger than 20 kΩ.
CC
/2 biased DC signal should be
V input.
Input for Q signal. This i n put
impedance is larger than 20 kΩ. Relations between amplitude and
CC
/2 bias of input signal are
V following.
VCC/2 (v) Amp. (mV
1.35 400
1.5 600
1.75 1000
1.5 Output from modulator. This is emitter follower output.
7 6
p-p
)
*1
12
In case of that I/Q input signals are single ended.
*1:
Of course, I/Q signal inputs can be used either single endedly or differentially with proper terminations.
Data Sheet P10807EJ3V0DS00
5
Loading...
+ 11 hidden pages