NEC UPC2711TB-E3, UPC2711TB, UPC2711T-E3, UPC2711T Datasheet

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

PPPP

2.9 GHz WIDE BAND AMPLIFIER

SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

FEATURES

• High power gain : 13 dB TYP. @ f = 1 GHz

• Excellent frequency response: 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz

• Noise figure : 5 dB

• Single supply voltage : 5 V

• Input and output matching : 50

• Super small package : 6 pin mini mold

:

PC2711T

ORDERING INFORMATION

PART NUMBER PACKAGE SUPPLYING FORM

P

PC2711T-E3 6 pin mini mold Embossed tape 8 mm wide.

Pin 1, 2, 3 face to perforation side of the tape.

EQUIVALENT CIRCUIT PIN CONNECTIONS

VCC

OUT

(Top View)

IN

GND

3

2

1

4

1. INPUT

5

2. GND

3. GND

4. OUTPUT

6

C 1 G

5. GND

CC

6. V

(Bottom View)

4

5

6

3

2

1

Document No. P12428EJ2V0DS00 (2nd edition) (Previous No. IC-2948) Date Published March 1997 N Printed in Japan

Caution: Electro-static sensitive devices

1993©

ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)

PPPP

PC2711T

CC

opt stg

6V

30 mA

D

in

280

*

40 to +85 °C

ð

55 to +150 °C

ð

+10 dBm

mW

Supply Voltage V Total Circuit Current I Power Dissipation P Operating Temperature T Storage Temperature T Input Power P

Mounted on 50 u 50 u 1.6 mm epoxy glass PWB (TA = +85 °C)

*

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

'

CC

P

O(sat)

U

out

G

4.5 5.0 5.5 V

)

::::

9 12 15 mA No signal 11 13 16.5 dB f = 1 GHz ð2 +1 dBm f = 1 GHz, Pin = 0 dBm

2.7 2.9 GHz 3 dB down below flat gain f = 0.1 GHz

in

P

20 25 dB f = 1 GHz

9 12 dB f = 1 GHz

±0.8 dB f = 0.1 to 2.5 GHz

Supply Voltage V

ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5 V, ZS = ZL = 50

PARAMETERS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Circuit Current I Power Gain G Maximum Output Level P Noise Figure NF 5 6.5 dB f = 1 GHz Upper Limit Operating Frequency f

Isolation ISL 25 30 dB f = 1 GHz Input Return Loss RL Output Return Loss RL Gain Flatness

2

TEST CIRCUIT

C

50 Ω

1

IN

1 000 pF

EXAMPLE OF APPLICATION CIRCUIT

V

CC

1 000 pF

C

1

PPPP

PC2711T

V

CC

3

6

C

2

4

50 Ω

OUT

1 000 pF

2, 3, 5

IN

50 Ω

1

C

1 000 pF

C

1

3

6

C

4

1 000 pF

C

1 000 pF

R

1

5

1

6

1 000 pF

C

6

4

2

C

1 000 pF

50 Ω

OUT

50 to 200 Ω

2, 3, 5

To stabilize operation,

1

, C

please connect R

5

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

Capacitors for VCC, input and output pins

1 000 pF capacitors are recommendable as bypass capacitor for V

CC

pin and coupling capacitors for input/output

pins.

Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be

supplied against VCC fluctuation.

Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.

To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 S fZs).]

3

TYPICAL CHARACTERISTICS (TA = 25 °C)

PPPP

PC2711T

20 18 16 14 12 10

8 6

ICC – Circuit Current – mA

4 2

0 123456

20

8

7

6

15

10

5

CIRCUIT CURRENT vs. SUPPLY VOLTAGE

V

CC – Supply Voltage – V

NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY

VCC = 5.5 V

VCC = 5.0 V

G

P

VCC = 4.5 V

CIRCUIT CURRENT vs.

20 18 16 14 12 10

8 6

ICC – Circuit Current – mA

4 2

0

15

10

OPERATING TEMPERATURE

–40 –20 40 60 80

T

opt – Operating Temperature – °C

INSERTION POWER GAIN vs. FREQUENCY

TA = –40 °C

TA = +85 °C

0–60 20 100

TA = +25 °C

TA = –40 °C

VCC = 5.0 V

TA = +85 °C

TA = +25 °C

5

NF – Noise Figure – dB

4

0

VCC = 4.5 V

GP – Insertion Power Gain – dB

–5

0.1 0.3 1.0 3.0

0

–10

–20

–30

ISL – Isolation – dB

–40

–50

0.1

NF

f – Frequency – GHz

ISOLATION vs. FREQUENCY

0.3 1.0 3.0 f – Frequency – GHz

VCC = 5.0 V

V

CC = 5.0 V

GP – Insertion Power Gain – dB

CC = 5.0 V

5

0.1 0.3 1.0 3.0 f – Frequency – GHz

INPUT RETURN LOSS, OUTPUT

0

–10

–20

–30

out – Output Return Loss – dB

RL

RLin – Input Return Loss – dB

–40

RETURN LOSS vs. FREQUENCY

RLout

0.1

0.3 1.0 3.0

f – Frequency – GHz

V

VCC = 5.0 V

RLin

4