
PRELIMINARY DATA SHEET
OCMOS FET
PS7241S-1A
CURRENT LIMIT TYPE
4-PIN SOP 400 V OCMOS FET
(1-ch OCMOS FET)
DESCRIPTION
The PS7241S-1A is a solid state relay containing GaAs LEDs on the light emitting side (input side) and MOS FETs
including current control circuit on the output side. Current control circuit of OCMOS FET protects this device from
thermal breakdown and output circuit.
It is suitable for analog signal control because of its low offset and high linearity.
FEATURES
• Shut down type circuit
• Limit current (I
• Small and thin package (4-pin SOP, Height = 2.1 mm)
• 1 channel type (1 a output)
• Low LED operating current (IF = 2 mA)
• Designed for AC/DC switching line changer
• Low offset voltage
• Ordering number of taping product: PS7241S-1A-E3, E4, F3, F4
• UL approved: File No. E72422 (S)
LMT
= 155 to 210 mA)
TM
APPLICATIONS
• Note PC, PDA
• Modem card
• Telephone, FAX
• Measurement equipment
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13922EJ2V0DS00 (2nd edition)
Date Published July 1999 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
©
1998, 1999

PS7241S-1A
–0.05
+0.08
2.05
–0.05
+0.08
0.05
0.40
4.0±0.5
2.54
+0.10
–0.05
0.25 M
PACKAGE DIMENSIONS
in millimeters
–0.05
+0.10
0.15
TOP VIEW
43
1. LED Anode
2. LED Cathode
3. MOS FET
4. MOS FET
12
7.0±0.3
4.4
0.5±0.3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °°°°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) I
Reverse Voltage V
Power Dissipation P
Peak Forward Current
*1
MOS FET Break Down Voltage V
Continuous Load Current I
Pulse Load Current
*2
(AC/DC Connection)
Power Dissipation P
Isolation Voltage
*3
Total Power Dissipat i on P
Operating Ambient Temperature T
Storage Temperature T
PW = 100 µs, Duty Cycle = 1 %
*1
PW = 100 ms, 1 shot
*2
AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
*3
F
R
D
FP
I
L
L
LP
I
D
50 mA
5.0 V
50 mW
1A
400 V
120 mA
120 mA
300 mW
BV 1 500 Vr.m.s.
T
A
stg
350 mW
−
40 to +80
−
40 to +100
°
C
°
C
2
Preliminary Data Sheet P13922EJ2V0DS00

RECOMMENDED OPERATING CONDITIONS (TA = 25 °°°°C)
Parameter Symbol MIN. TYP. MAX. Unit
PS7241S-1A
LED Operating Current I
LED Off Voltage V
F
F
21020mA
00.5V
ELECTRICAL CHARACTERISTICS (TA = 25 °°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage V
Reverse Current I
MOS FET Off-state Leakage Current I
Output Capacitance C
Coupled LED On-state Current I
On-state Resistance R
Turn-on Time
Turn-off Time
*1
*1
Isolation Resistance R
Isolation Capacitance C
Limit Current I
F
R
Loff
out
FonIL
on1IF
on2IF
R
on
t
off
t
I-O
I-O
LMTIF
IF = 10 mA 1.2 1.4 V
VR = 5 V 5.0
VD = 400 V 1
VD = 0 V, f = 1 MHz 65 pF
= 120 mA 2 mA
= 10 mA, IL = 10 mA 28 35
= 10 mA, IL = 120 mA 24 30
IF = 10 mA, VO = 5 V, 0.5 2.0 ms
PW ≥ 10 ms 0.07 0.2
I-O
V
= 1.0 kV
V = 0 V, f = 1 MHz 0.5 pF
= 10 mA, VL = 6 V, t = 5 ms 155 180 210 mA
µ
A
µ
A
Ω
DC
10
9
Ω
Test Circuit for Switching Time
*1
I
F
Pulse Input
Input monitor monitorV
R
in
V
L
Input
50 %
0
O
VO = 5 V
90 %
Output
R
L
t
on
t
off
10 %
Preliminary Data Sheet P13922EJ2V0DS00
3

PS7241S-1A
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
OCMOS FET is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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M7 98. 8