NEC PS7200B-1A, PS7200B-1A-E3, PS7200B-1A-E4, PS7200B-1A-F3, PS7200B-1A-F4 Datasheet

DATA SHEET
OCMOS FET
PS7200B-1A
4-PIN SOP 1.0
LOW ON-STATE RESISTANCE
ΩΩΩΩ
1-ch Optical Coupled MOS FET
DESCRIPTION
The PS7200B-1A is a low on-state resistance solid state relay containing GaAs LEDs on the light emitting side
(input side) and MOS FETs on the output side.
It is suitable for high-frequency signal control due to its low C × R, low on-state resistance, and low off-state
leakage current.
FEATURES
• Low C × R (C × R = 32 pF • Ω)
• Low on-state resistance (Ron = 1.0 TYP.)
• Low off-state leakage current (I
• High-speed turn-on time (ton = 0.05 ms TYP.)
• 1 channel type (1 a output)
• Low LED operating current (IF = 2 mA)
• Designed for AC/DC switching line changer
• Small and thin package (4-pin SOP, Height = 2.1 mm)
• Low offset voltage
• Ordering number of taping product: PS7200B-1A-E3, E4, F3, F4
• UL approved: File No. E72422 (S)
• BSI approved: No. 8241/8242
• CSA approved: No. CA 101391
Loff
= 0.1 nA TYP.)
APPLICATIONS
• Measurement equipment
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P12637EJ4V0DS00 (4th edition) Date Published October 1999 NS CP (K) Printed in Japan
The mark
••••
shows major revised points.
©
1997, 1999
PS7200B-1A
–0.05
+0.08
2.05
–0.05
+0.08
0.05
0.40
4.0±0.5
2.54
+0.10 –0.05
0.25 M
PACKAGE DIMENSIONS
in millimeters
–0.05
+0.10
0.15
TOP VIEW
43
1. LED Anode
2. LED Cathode
3. MOS FET
4. MOS FET
12
7.0±0.3
4.4
0.5±0.3
2
Data Sheet P12637EJ4V0DS00
ORDERING INFORMATION
PS7200B-1A
Part Number Package Packing Style
Application Part Number
PS7200B-1A 4-pin SOP Magazine case 100 pcs PS7200B-1A PS7200B-1A-E3 Embossed Tape 900 pcs/reel PS7200B-1A-E4 PS7200B-1A-F3 Emboss ed Tape 3 500 pcs/reel PS7200B-1A-F4
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25
Parameter Symbol Ratings Unit
Diode Forward Current (DC) I
Reverse Voltage V Power Dissipation P Peak Forward Current
*1
MOS FET Break Down Voltage V
Continuous Load Current I Pulse Load Current
*2
(AC/DC Connection) Power Dissipation P
Isolation Voltage
*3
Total Power Dissipat i on P Operating Ambient Temperature T Storage Temperature T
F
R
D
FP
I
L
L
LP
I
D
BV 1 500 Vr.m.s.
T
A
stg
C, unless otherwise specified)
°°°°
50 mA
5.0 V 50 mW
1A
40 V
250 mA 500 mA
100 mW
150 mW
40 to +80
40 to +100
°
C
°
C
*1
*1 PW = 100 µs, Duty Cycle = 1 % *2 PW = 100 ms, 1 shot *3 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet P12637EJ4V0DS00
3
PS7200B-1A
RECOMMENDED OPERATING CONDITIONS (TA = 25
Parameter Symbol MIN. TYP. MAX. Unit LED Operating Current I LED Off Voltage V
ELECTRICAL CHARACTERISTICS (TA = 25
Parameter Symbol Conditions MIN. TYP. MAX. Unit Diode Forward Voltage V
Reverse Current I
MOS FET Off-state Leakage Current I
Output Capacitance C
Coupled LED On-s t ate Current I
On-state Resistance R
Turn-on Time Turn-off Time Isolation Resistance R Isolation Capacitance C
*1
*1
F
F
F
R
Loff
out
FonIL
on1IF
on2IF
R
on
t
off
t
I-O
I-O
21020mA
00.5V
C)
°°°°
IF = 10 mA 1.2 1.4 V VR = 5 V 5.0 VD = 40 V 0.1 100 nA VD = 0 V, f = 1 MHz 32 pF
= 250 mA 2.0 mA = 10 mA, IL = 10 mA 1.0 1.5 = 10 mA, IL = 250 mA, t ≤ 10 ms
IF = 10 mA, VO = 5 V, PW ≥ 10 ms 0.05 1.0 ms
I-O
V
= 1.0 kV
DC
V = 0 V, f = 1 MHz 0.5 pF
C)
°°°°
µ
A
0.02 0.2
10
9
*1 Test Circuit for Switching Time
I
F
Pulse Input
Input monitor monitorV
R
in
V
L
Input
50 %
0
O
VO = 5 V
90 %
Output
R
L
t
on
t
off
10 %
4
Data Sheet P12637EJ4V0DS00
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