NEC PS2533-1, PS2533L-1 Technical data

DATA SHEET

PHOTOCOUPLER

PS2533-1,PS2533L-1

HIGH COLLECTOR TO EMITTER VOLTATGE

HIGH ISOLATION VOLTAGE

MULTI PHOTOCOUPLER SIRIES

DESCRIPTION

The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN

silicon darlington connected phototransistor.

The PS2533-1 is in a plastic DIP (Dual In-line Package) and the PS2533L-1 is lead bending type (Gull-wing) for

surface mount.

FEATURES

• High collector to emitter voltage (VCEO = 350 V)

• High Isolation voltage (BV = 5 000 Vr.m.s.)

• High current transfer ratio (CTR = 4 000% TYP.)

• High-speed switching (t

• Ordering number of tape product: PS2533L-1-E3, E4, F3, F4

• Safety standards

• UL approved: File No. E72422

• BSI approved: No. 8221/8222

• CSA approved: No. CA 101391

• NEMKO approved: No. P98101708

• SEMKO approved: No. 0143092/01-02

• DEMKO approved: No. 307863

• FIMKO approved: No. FI 17640

• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)

APPLICATIONS

• Telephone, Exchange equipment

• FAX/MODEM

r, tf = 100

µ

s TYP.)

−NEPOC Series−

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PN10233EJ02V0DS (2nd edition)
Date Published March 2006 CP(K)
Printed in Japan

The mark  shows major revised points.



NEC Compound Semiconductor Devices, Ltd. 1990, 2006

PACKAGE DIMENSIONS (Unit : mm)

DIP Type (New package)

PS2533-1,PS2533L-1

6.5±0.5

4.15±0.43.2±0.4

3.5±0.3

1.25±0.15

DIP Type

6.5±0.5

PS2533-1

4.6±0.35

2.54

PS2533-1

4.6±0.5

0 to 15˚

0.50±0.10

0.25

TOP VIEW

43

1. Anode

2. Cathode

3. Emitter

4. Collector

12

7.62

+0.1

0.25

–0.05

M

TOP VIEW

43

1. Anode

2. Cathode

3. Emitter

4. Collector

12

7.62

4.15±0.43.3±0.5

1.25±0.15

3.5±0.3

2.54

0 to 15˚

0.50±0.10

0.25

0.25

M

+0.1

–0.05

2

Data Sheet PN10233EJ02V0DS

Lead Bending Type (New package)

PS2533L-1

PS2533-1,PS2533L-1

4.6±0.35

6.5±0.5

+0.1

–0.05

0.25

0.15

1.25±0.15

0.25

3.5±0.3

M

2.54

Lead Bending Type

PS2533L-1

4.6±0.5

6.5±0.5

TOP VIEW

43

1. Anode

2. Cathode

3. Emitter

4. Collector

12

0.9±0.25

9.60±0.4

TOP VIEW

43

1. Anode

2. Cathode

3. Emitter

4. Collector

12

+0.1

0.1

–0.05

1.25±0.15

0.25

3.5±0.3

M

2.54

+0.1

–0.05

0.25

0.15

0.9±0.25

9.60±0.4

+0.1

0.1

–0.05

Data Sheet PN10233EJ02V0DS

3

MARKING EXAMPLE

No. 1 pin
Mark

N

CTR Rank Code

2533

NL601

6

01

L

Year Assembled
(Last 1 Digit)

In-house Code

PS2533-1,PS2533L-1

Assembly Lot

Week Assembled

L

J

Made in Taiwan

N

Package

Standard PKG

New PKG

Made in Japan

4

Data Sheet PN10233EJ02V0DS

PS2533-1,PS2533L-1

ORDERING INFORMATION

Part Number Order Number Solder Plating

Specification

PS2533-1 PS2533-1-A Pb-Free Magazine case 100 pcs Standard products PS2533-1

PS2533L-1 PS2533L-1-A (UL, CSA, BSI,

PS2533L-1-E3 PS2533L-1-E3-A Embossed Tape 1 000 pcs/reel NEMKO, SEMKO,

PS2533L-1-E4 PS2533L-1-E4-A DEMKO, FIMKO

PS2533L-1-F3 PS2533L-1-F3-A Embossed Tape 2 000 pcs/reel approved)

PS2533L-1-F4 PS2533L-1-F4-A

PS2533-1-V PS2533-1-V-A Magazine case 100 pcs DIN EN60747-5-2

PS2533L-1-V PS2533L-1-V-A (VDE0884 Part2)

PS2533L-1-V-E3 PS2533L-1-V-E3-A Embossed Tape 1 000 pcs/reel Approved (Option)

PS2533L-1-V-E4 PS2533L-1-V-E4-A

PS2533L-1-V-F3 PS2533L-1-V-F3-A Embossed Tape 2 000 pcs/reel

PS2533L-1-V-F4 PS2533L-1-V-F4-A

*1 For the application of the Safety Standard, following part number should be used.

Packing Style Safety Standard

Approval

Application Part

Number

*1

Data Sheet PN10233EJ02V0DS

5

PS2533-1,PS2533L-1

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

Parameter Symbol Ratings Unit

Diode Forward Current (DC) IF 80 mA

Reverse Voltage VR 6 V

Power Dissipation Derating

Power Dissipation PD 150 mW

Peak Forward Current

Transistor Collector to Emitter Voltage VCEO 350 V

Emitter to Collector Voltage VECO 0.6 V

Collector Current IC 150 mA

Power Dissipation Derating

Power Dissipation PC 300 mW

Isolation Voltage*2 BV 5 000 Vr.m.s.

Operating Ambient Temperature TA −55 to +100 °C

Storage Temperature Tstg −55 to +150 °C

*1

IFP 1 A

*1 PW = 100

*2 AC voltage for 1 minute at T

µ

s, Duty Cycle = 1%

A = 25°C, RH = 60% between input and output

Pins 1-2 shorted together, 3-4 shorted together.

∆

PD/°C 1.5 mW°C

∆

PC/°C 3.0 mW/°C

6

Data Sheet PN10233EJ02V0DS

PS2533-1,PS2533L-1

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Diode Forward Voltage VF IF = 10 mA 1.15 1.40 V

Reverse Current IR VR = 5 V 5

Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 30 pF

Transistor

Coupled

Isolation Resistance RI-O VI-O = 1.0 kVDC 1011

Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF

Rise Time*1 tr VCC = 5 V, IC = 10 mA, RL = 100 Ω 100 µs

Fall Time

*1 Test circuit for switching time

Collector to Emitter
Dark Current

Current Transfer Ratio

C/IF)

(I

Collector Saturation
Voltage

Pulse input

ICEO VCE = 350 V, IF = 0 mA 400 nA

CTR I

F = 1 mA, VCE = 2 V 1 500 4 000 6 500 %

VCE(sat) IF = 1 mA, IC = 2 mA 1.0 V

*1

tf 100

CC

V

µ

A

Ω

(PW = 1 ms,
Duty cycle = 1/10)

I

F

V

OUT

RL = 100 Ω50 Ω

Data Sheet PN10233EJ02V0DS

7

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE

150

(mW)

D

100

TRANSISTOR POWER DISSIPATION

vs. AMBIENT TEMPERATURE

400

(mW)

C

300

PS2533-1,PS2533L-1

1.5 mW/˚C

50

Diode Power Dissipation P

0 25 50 75 100 125 150

Ambient Temperature T

A

(˚C)

FORWARD CURRENT vs.

FORWARD VOLTAGE

100

TA = +100 ˚C

+75 ˚C

10

(mA)

F

1

0.1

Forward Current I

0.01

0.6 0.8 1.0 1.2 1.4 1.6

+50 ˚C

Forward Voltage V

+25 ˚C

–25 ˚C
–55 ˚C

F

(V)

0 ˚C

200

3.0 mW/˚C

100

Transistor Power Dissipation P

0 25 50 75 100 125 150

A

Ambient Temperature T

(˚C)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

160

140

120

(mA)

C

100

80

60

40

Collector Current I

20

021 3456 87

4.5 mA

5.0 mA

4.0 mA

3.5 mA

3.0 mA

2.5 mA

2.0 mA

1.5 mA

1.0 mA

IF = 0.5 mA

Collector to Emitter Voltage V

CE

(V)

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

10

µ

(A)

CEO

100 n

100 p

Collector to Emitter Dark Current I

Remark The graphs indicate nominal characteristics.

8

VCE = 350 V

1

µ

10 n

1 n

–50 –25 0 25 50 75 100

Ambient Temperature TA (˚C)

Data Sheet PN10233EJ02V0DS

COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE

500

F

100

50

(mA)

C

10

5

1

Collector Current I

0.5

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Collector Saturation Voltage V

I

CE(sat)

= 5.0 mA

2.0 mA

1.0 mA

0.5 mA

(V)

PS2533-1,PS2533L-1

NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE

1.2

1.0

0.8

0.6

0.4

Normalized to 1.0

0.2

Normalized Current Transfer Ratio CTR

0.0
–50 –25 25 50 75 1000

Ambient Temperature T

A

= 25 ˚C,

at T
I

F

= 1 mA, VCE = 2 V

A

(˚C)

SWITCHING TIME vs.
LOAD RESISTANCE

500

VCC = 10 V,

C

= 10 mA

I

100

µ

50

10

5

Switching Time t ( s)

1

20 100 200 500 1 k 2 k50

Load Resistance R

L

(Ω)

CURRENT TRANSFER RATIO vs.
FORWARD CURRENT

5 000

4 000

Sample A

B

3 000

2 000

1 000

Current Transfer Ratio CTR (%)

0

15100.1 0.5 15

Forward Current I

F

(mA)

VCE = 2 V

FREQUENCY RESPONSE

5

t

r

t

d

t

f

t

s

0

–5

RL = 1 kΩ

100 Ω

10 Ω

–10

CE

= 4 V, Vin = 0.1 V

V

–15

1 kΩ

–20

Normalized Gain Gv

1

µ

F

–25

–30

0.01 0.1 1 10 100

47 Ω

V

in

p-p

V

out

R

L

Frequency f (kHz)

LONG TERM CTR DEGRADATION

1.2

1.0

0.8

0.6

0.4

CTR (Relative Value)

0.2

0.0

10 10

Remark The graphs indicate nominal characteristics.

IF = 1 mA,

A

= 25 ˚C

T

IF = 1 mA,
T

A

= 60 ˚C

2

10

3

10

4

10

5

10

6

Time (Hr)

Data Sheet PN10233EJ02V0DS

9

TAPING SPECIFICATIONS (Unit : mm)

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

PS2533-1,PS2533L-1

+0.1

φ

1.5

1.75±0.1

–0

7.5±0.1

16.0±0.3

10.3±0.1

4.5 MAX.

1.55±0.1

8.0±0.1

Tape Direction

PS2533L-1-E3 PS2533L-1-E4

Outline and Dimensions (Reel)

5.3±0.1

2.0±0.5

φ

13.0±0.2

4.0±0.1

0.4

2.0±0.5

10

254±2.0

R 1.0

Packing: 1 000 pcs/reel

21.0±0.8

φ

φ

80.0±1.0

φ

17.5±1.0

21.5±1.0

15.9 to 19.4
Outer edge of

flange

Data Sheet PN10233EJ02V0DS

Outline and Dimensions (Tape)

2.0±0.1

4.0±0.1

1.5

+0.1
–0

1.75±0.1

7.5±0.1

16.0±0.3

PS2533-1,PS2533L-1

4.5 MAX.

10.3±0.1

1.55±0.1

8.0±0.1

Tape Direction

PS2533L-1-F3 PS2533L-1-F4

Outline and Dimensions (Reel)

5.3±0.1

2.0±0.5

φ

13.0±0.2

4.0±0.1

0.4

2.0±0.5

100±1.0

R 1.0

Packing: 2 000 pcs/reel

21.0±0.8

φ

330±2.0

φ

φ

17.5±1.0

21.5±1.0

15.9 to 19.4
Outer edge of

flange

Data Sheet PN10233EJ02V0DS

11

PS2533-1,PS2533L-1

NOTES ON HANDLING

1. Recommended soldering conditions

(1) Infrared reflow soldering

• Peak reflow temperature 260°C or below (package surface temperature)

• Time of peak reflow temperature 10 seconds or less

• Time of temperature higher than 220°C 60 seconds or less

• Time to preheat temperature from 120 to 180°C 120±30 s

• Number of reflows Three

• Flux Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt% is recommended.)

Recommended Temperature Profile of Infrared Reflow

(heating)

to 10 s

260˚C MAX.

220˚C

to 60 s

180˚C

120˚C

Package Surface Temperature T (˚C)

120±30 s

(preheating)

Time (s)

(2) Wave soldering

• Temperature 260°C or below (molten solder temperature)

• Time 10 seconds or less

• Preheating conditions 120°C or below (package surface temperature)

• Number of times One (Allowed to be dipped in solder including plastic mold portion.)

• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine

content of 0.2 Wt% is recommended.)

(3) Soldering by soldering iron

• Peak temperature (lead part temperature) 350°C or below

• Time (each pins) 3 seconds or less

• Flux Rosin flux containing small amount of chlorine (The flux with a

maximum chlorine content of 0.2 Wt% is recommended.)

(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.

(b) Please be sure that the temperature of the package would not be heated over 100°C.

12

Data Sheet PN10233EJ02V0DS

PS2533-1,PS2533L-1

(4) Cautions

• Fluxes

Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.

2. Cautions regarding noise

Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between

collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute

maximum ratings.

3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler

Check the setting values before use, since the forward current conditions at CTR measurement differ according

to product.

When using products other than at the specified forward current, the characteristics curves may differ from the

standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual

operating conditions and thoroughly take variations or the like into consideration before use.

USAGE CAUTIONS

1. Protect against static electricity when handling.

2. Avoid storage at a high temperature and high humidity.

Data Sheet PN10233EJ02V0DS

13

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter Symbol Speck Unit

PS2533-1,PS2533L-1

Application classification (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s.
for rated line voltages ≤ 600 Vr.m.s.

IV
III

Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21

Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)

pr = 1.2 × UIORM, Pd < 5 pC

U

Test voltage (partial discharge test, procedure b for all devices test)

pr = 1.6 × UIORM, Pd < 5 pC

U

IORM

U

Upr

U

pr 1 424 Vpeak

890

1 068

peak

V
Vpeak

Highest permissible overvoltage UTR 8 000 Vpeak

Degree of pollution (DIN VDE 0109) 2

Clearance distance > 7.0 mm

Creepage distance > 7.0 mm

Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175

Material group (DIN VDE 0109) III a

Storage temperature range Tstg −55 to +150 °C

Operating temperature range TA –55 to +100 °C

Isolation resistance, minimum value

IO = 500 V dc at TA = 25°C

V

IO = 500 V dc at TA MAX. at least 100°C

V

Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current I

F, Psi = 0)

Power (output or total power dissipation)
Isolation resistance
V

IO = 500 V dc at TA = 175°C (Tsi)

Ris MIN.
Ris MIN.

Tsi

Isi

Psi

Ris MIN.

10
10

175
400
700

10

12

11

Ω
Ω

°C

mA

mW

9

Ω

14

Data Sheet PN10233EJ02V0DS

APPLICATION FOR TELEPHONE (EXAMPLE)

LINE

Bell Ringing Signal
(75 Vr.m.s., 16 Hz)

PS2505/PS2506
PS2705/PS2707
PS2805
etc.

PS2533-1,PS2533L-1

Bell Ringing Detect

CC

V

PS2521
PS2525

OCMOS FET

PS7xxx

Speech Circuit

Line Observe

Dial Pulse PS2532/PS2533/PS2535
Generator PS2732/PS2733
PS2832/PS2833

V

CC

Dialer Circuit

CPU

IN

OUT

Data Sheet PN10233EJ02V0DS

15

PS2533-1,PS2533L-1

When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.

•

The information in this document is current as of March, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4 - 0110

16

Data Sheet PN10233EJ02V0DS

PS2533-1,PS2533L-1

Caution GaAs Products

This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.

1. Commission a disposal company able to (with a license to) collect, transport and dispose of

materials that contain arsenic and other such industrial waste materials.

2. Exclude the product from general industrial waste and household garbage, and ensure that the

product is controlled (as industrial waste subject to special control) up until final disposal.

• Do not burn, destroy, cut, crush, or chemically dissolve the product.

• Do not lick the product or in any way allow it to enter the mouth.

For further information, please contact

NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/

E-mail: [e-mail] (sales and general)
[e-mail] (technical)
Sales Division TEL: [phone] FAX: [phone]

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: [e-mail] (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office

NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: [phone] FAX: [phone]

California Eastern Laboratories, Inc. http://www.cel.com/
TEL: [phone] FAX: [phone]

TEL: [phone]
TEL: [phone]
TEL: [phone]

FAX: [phone]
FAX: [phone]
FAX: [phone]

0504