DATA SHEET
©
PHOTOCOUPLER
PS2532-1,-2,-4,PS2532L-1,-2,-4
HIGH COLLECTOR TO EMITTER VOLTATGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SIRIES
DESCRIPTION
The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington connected phototransistor.
The PS2532-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2532L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
• High collector to emitter voltage (V
• High Isolation voltage BV = 5 000 Vr.m.s.: standard products
BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)
• High current transfer ratio (CTR = 4 000 % TYP.)
• High-speed switching (tr, tf = 100 µs TYP.)
• Ordering number of taping product: PS2532L-1-E3, E4, F3, F4, PS2532L-2-E3, E4
• UL approved: File No. E72422 (S)
• BSI approved: No. 8221/8222
• NEMKO approved: No. 98101708
• SEMKO approved: No. 9824187/01-02
• DEMKO approved: No. 307863
• FIMKO approved: No. F1 11397
• VDE0884 approved (Option)
CEO
= 300 V)
NEPOCTM Series
−
−
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
The information in this document is subject to change without notice.
Document No. P11434EJ5V0DS00 (5th edition)
Date Published September 1998 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
1990
PACKAGE DIMENSIONS (in millimeters)
DIP type
PS2532-1,-2,-4,PS2532L-1,-2,-4
PS2532-2PS2532-1
5.1 MAX.
6.5
3.8 MAX.
4.55 MAX.2.8 MIN.
0.65
1.25±0.15
2.54
0.50±0.10
0.25
PS2532-1 (NEW PACKAGE)
TOP VIEW
43
12
7.62
0 to 15˚
M
1. Anode
2. Cathode
3. Emitter
4. Collector
6.5
4.55 MAX.2.8 MIN.
1.25±0.15
3.8 MAX.
0.65
10.2 MAX.
2.54
0.50±0.10
M
0.25
PS2532-4
TOP VIEW
8765
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1234
7.62
0 to 15˚
TOP VIEW
16 15 14 13 12 11 10 9
1.25±0.15
2
6.5
3.8 MAX.
4.55 MAX.2.8 MIN.
0.65
4.6±0.35
2.54
0.50±0.10
0.25
TOP VIEW
43
12
7.62
0 to 15˚
M
1. Anode
2. Cathode
3. Emitter
4. Collector
6.5
4.55 MAX.2.8 MIN.
1.25±0.15
3.8 MAX.
0.65
2.54
20.3 MAX.
0.50±0.10
0.25
12345678
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
0 to 15˚
M
7.62
Lead bending type
PS2532-1,-2,-4,PS2532L-1,-2,-4
PS2532L-2PS2532L-1
6.5
3.8 MAX.
1.25±0.15
5.1 MAX.
2.54
M
0.25
TOP VIEW
43
1. Anode
2. Cathode
3. Emitter
4. Collector
12
7.62
0.9±0.25
9.60±0.4
PS2532L-1 (NEW PACKAGE)
0.05 to 0.2
6.5
3.8 MAX.
1.25±0.15
0.25
10.2 MAX.
M
2.54
TOP VIEW
8765
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1234
7.62
0.05 to 0.2
0.9±0.25
9.60±0.4
PS2532L-4
TOP VIEW
16 15 14 13 12 11 10 9
6.5
3.8 MAX.
1.25±0.15
4.6±0.35
2.54
M
0.25
TOP VIEW
43
1. Anode
2. Cathode
3. Emitter
4. Collector
12
7.62
0.9±0.25
9.60±0.4
0.05 to 0.2
6.5
3.8 MAX.
1.25±0.15
0.25
20.3 MAX.
M
2.54
12345678
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
7.62
0.05 to 0.2
0.9±0.25
9.60±0.4
3
Lead bending type for long distance
PS2532L1-1 PS2532L2-1
PS2532-1,-2,-4,PS2532L-1,-2,-4
6.5
4.25 MAX.2.8 MIN.
1.25±0.15
1.0±0.2
6.5
5.1 MAX.
3.8 MAX.
0.35
4.6±0.35
2.54
0.50±0.10
0.25
M
TOP VIEW
43
1. Anode
2. Cathode
3. Emitter
4. Collector
12
10.16
7.62
0 to 15˚
TOP VIEW
43
1. Anode
2. Cathode
3. Emitter
4. Collector
12
6.5
1.25±0.15
0.25
1.0±0.2
6.5
5.1 MAX.
3.8 MAX.
M
4.6±0.35
2.54
TOP VIEW
43
1. Anode
2. Cathode
3. Emitter
4. Collector
12
10.16
7.62
0.25±0.2
0.9±0.25
12.0 MAX.
PS2532L2PS2532L1
TOP VIEW
43
1. Anode
2. Cathode
3. Emitter
4. Collector
12
10.16
7.62
0.25±0.2
0.9±0.25
12.0 MAX.
4.25 MAX.3.2 MIN.
1.25±0.15
3.8 MAX.
0.35
2.54
0.50±0.10
0.25
10.16
7.62
3.8 MAX.
1.25±0.15
0.25
0 to 15˚
M
M
2.54
4
PS2532-1,-2,-4,PS2532L-1,-2,-4
ORDERING INFORMATION
Part Number Package Safety Standard Approval
PS2532-1
PS2532L-1
PS2532L1-1
PS2532L2-1
PS2532-2
PS2532L-2
PS2532-4
PS2532L-4
PS2532-1-V
PS2532L-1-V
PS2532L1-1-V
PS2532L2-1-V
PS2532-2-V
PS2532L-2-V
PS2532-4-V
PS2532L-4-V
As applying to Safety Standard, following part number should be used.
*1
4-pin DIP
4-pin DIP (lead bending surface mount )
4-pin DIP (for long distance)
4-pin DIP (for long distance surface mount)
8-pin DIP
8-pin DIP (lead bending surface mount )
16-pin DIP
16-pin DIP (lead bending surface mount )
4-pin DIP
4-pin DIP (lead bending surface mount )
4-pin DIP (for long distance)
4-pin DIP (for long distance surface mount)
8-pin DIP
8-pin DIP (lead bending surface mount )
16-pin DIP
16-pin DIP (lead bending surface mount )
Standard products
(UL, BSI, NEMKO, SEMKO,
DEMKO, FIMKO approved)
VDE0884 approved products
(Option)
Application Part Number
PS2532-1
PS2532-2
PS2532-4
PS2532-1
PS2532-2
PS2532-4
*1
5
PS2532-1,-2,-4,PS2532L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °°°°C, unless otherwise specified)
Ratings
Parameter Symbol
PS2532-1,
PS2532L-1
PS2532-2, -4,
PS2532L-2, -4
Unit
Diode Forward Current (DC) I
Reverse Voltage V
Power Dissipation Derati ng
Power Dissipation P
Peak Forward Current
*1
Transistor Collector to Emitter Voltage V
Emitter to Collector Voltage V
Collector Current I
Power Dissipation Derati ng
Power Dissipation P
Isolation Voltage
*2
Operating Ambient Temperature T
Storage Temperature T
PW = 100
*1
AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
*2
VDE0884 approved products (Option)
*3
s, Duty Cycle = 1 %
µ
F
R
∆
PD/°C1.5 1.2mW
D
FP
I
CEO
ECO
C
∆
PC/°C 3.0 2.4 mW/°C
C
BV
A
stg
80 mA
6V
150 120 mW/ch
1A
300 V
0.6 V
150 mA/ch
300 240 mW/ch
5 000
*3
3 750
−
55 to +100
−
55 to +150
°
Vr.m.s.
°
C
°
C
C
6
ELECTRICAL CHARACTERISTICS (TA = 25 °°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
PS2532-1,-2,-4,PS2532L-1,-2,-4
Diode Forward Voltage V
Reverse Current I
Terminal Capacitance C
Transistor
Collector to Emitter
Dark Current
Coupled
Current Transfer Ratio
C/IF
(I
)
Collector Saturation
CTR I
V
Voltage
Isolation Resistance R
Isolation Capacitance C
Rise Time
Fall Time
Test circuit for switching time
*1
*1
*1
(PW = 1 ms,
Duty cycle = 1/10)
F
IF = 10 mA 1.15 1.40 V
R
VR = 5 V 5
t
V = 0 V, f = 1.0 MHz 30 pF
CEO
I
VCE = 300 V, IF = 0 mA 400 nA
F
= 1 mA, VCE = 2 V 1 500 4 000 6 500 %
CE (sat)IF
t
t
= 1 mA, IC = 2 mA 1.0 V
I-O
I-O
V
= 1.0 kV
I-O
V = 0 V, f = 1.0 MHz 0.6 pF
r
VCC = 5 V, IC = 10 mA, RL = 100
f
Pulse input
DC
Ω
V
I
F
VOUT
11
10
100
100
CC
RL = 100 Ω50 Ω
µ
A
Ω
µ
s
7
PS2532-1,-2,-4,PS2532L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °°°°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
(mW)
D
100
PS2532-2, -4
PS2532L-2, -4
50
Diode Power Dissipation P
0 25 50 75 100 125 150
Ambient Temperature TA (˚C)
PS2532-1
PS2532L-1
1.5 mW/˚C
1.2 mW/˚C
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
TA = +100 ˚C
+75 ˚C
10
(mA)
F
1
0.1
Forward Current I
0.01
0.6 0.8 1.0 1.2 1.4 1.6
+50 ˚C
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
Forward Voltage VF (V)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
400
(mW)
C
300
PS2532-1
PS2532L-1
200
PS2532-2, -4
PS2532L-2, -4
100
2.4 mW/˚C
Transistor Power Dissipation P
0 25 50 75 100 125 150
Ambient Temperature TA (˚C)
3.0 mW/˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
160
140
120
(mA)
C
100
80
60
40
Collector Current I
20
021 3456 87
4.5 mA
5.0 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
IF = 0.5 mA
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
µ
10
(A)
CEO
100 n
100 p
Collector to Emitter Dark Current I
VCE = 300 V
µ
1
10 n
1 n
–50 –25 0 25 50 75 100
Ambient Temperature TA (˚C)
8
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
500
F
100
50
(mA)
C
10
5
1
Collector Current I
0.5
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Collector Saturation Voltage V
I
CE(sat)
= 5.0 mA
2.0 mA
1.0 mA
0.5 mA
(V)
PS2532-1,-2,-4,PS2532L-1,-2,-4
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
1.2
1.0
0.8
0.6
0.4
Normalized to 1.0
0.2
Normalized Current Transfer Ratio CTR
0.0
–50 –25 25 50 75 1000
A
= 25 ˚C,
at T
I
F
= 1 mA, VCE = 2 V
Ambient Temperature TA (˚C)
SWITCHING TIME vs.
LOAD RESISTANCE
500
VCC = 10 V,
I
C
= 10 mA
100
µ
50
10
5
Switching Time t ( s)
1
20 100 200 500 1 k 2 k50
Load Resistance RL (Ω)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
5 000
4 000
Sample A
Sample B
3 000
2 000
1 000
Current Transfer Ratio CTR (%)
0
15100.1 0.5 15
Forward Current IF (mA)
V
CE
= 2 V
FREQUENCY RESPONSE
5
t
r
t
d
t
f
t
s
0
–5
RL = 1 kΩ
100 Ω
10 Ω
–10
CE
= 4 V, Vin = 0.1 V
V
–15
1 kΩ
–20
Normalized Gain Gv
1
µ
F
–25
–30
0.01 0.1 1 10 100
47 Ω
V
in
p-p
V
out
R
L
Frequency f (kHz)
LONG TERM CTR DEGRADATION
1.2
1.0
0.8
0.6
0.4
CTR (Relative Value)
0.2
0.0
10 10
Remark
The graphs indicate nominal characteristics.
IF = 1 mA,
A
= 25 ˚C
T
IF = 1 mA,
T
A
= 60 ˚C
2
10
3
10
Time (Hr)
4
10
5
10
6
9
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
1.55±0.1
8.0±0.1
Tape Direction
1.55±0.1
5.6±0.1
PS2532-1,-2,-4,PS2532L-1,-2,-4
1.75±0.1
7.5±0.1
16.0±0.3
4.3±0.2
10.3±0.1
0.3
PS2532L-1-E3, F3 PS2532L-1-E4, F4
Outline and Dimensions (Reel)
R 1.0
2.0±0.5
φ
13.0±0.5
φ
21.0±0.8
φ
φ
80.0±5.0
φ
PS2532L-1-E3, E4: 250
PS2532L-1-F3, F4: 330
10
Packing: PS2532L-1-E3, E4 1 000 pcs/reel
PS2532L-1-F3, F4 2 000 pcs/reel
16.4
+2.0
–0.0
Outline and Dimensions (Tape)
2.0±0.1
4.0±0.1
1.55±0.1
12.0±0.1
Tape Direction
1.55±0.1
10.4±0.1
PS2532-1,-2,-4,PS2532L-1,-2,-4
1.75±0.1
7.5±0.1
16.0±0.3
4.3±0.2
10.3±0.1
0.3
PS2532L-2-E3 PS2532L-2-E4
Outline and Dimensions (Reel)
R 1.0
2.0±0.5
13.0±0.5
φ
φ
21.0±0.8
330
φ
80.0±5.0
φ
Packing: 1 000 pcs/reel
16.4
+2.0
–0.0
11
PS2532-1,-2,-4,PS2532L-1,-2,-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s
120 to 160 ˚C
60 to 90 s
(preheating)
Package Surface Temperature T (˚C)
Time (s)
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
•Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
12
PS2532-1,-2,-4,PS2532L-1,-2,-4
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Application class i fication (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s.
for rated line voltages ≤ 600 Vr.m.s.
Climatic test c l ass (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielectric strength
maximum operating isolat i on voltage
Test voltage (partial dis charge test, procedure a for ty pe test and random test)
pr
U
= 1.2 × U
IORM
, Pd < 5 pC
Test voltage (partial dis charge test, procedure b for random test)
pr
U
= 1.6 × U
IORM
, Pd < 5 pC
Highest permissible ov ervoltage U
IORM
U
pr
U
pr
U
TR
Degree of pollution (DIN VDE 0109) 2
Clearance distance
Creepage distance
Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage temperature range T
Operating temperature range T
stg
A
Isolation resistance, minimum value
IO
V
= 500 V dc at TA = 25 °C
IO
V
= 500 V dc at TA MAX. at least 100 °C
Ris MIN.
Ris MIN.
Safety maximum rat i ngs (maximum permissibl e i n case of fault, see therm al
derating curve)
Package temperature
Current (input current I
F
, Psi = 0)
Power (output or total power diss i pat i on)
Tsi
Isi
Psi
Isolation resistance
IO
V
= 500 V dc at TA = 175 °C (Tsi)
Ris MIN.
IV
III
890
1 068
1 424 V
6 000 V
>
7.0 mm
>
7.0 mm
−
55 to +150 °C
–55 to +100
10
10
175
400
700
10
peak
V
peak
V
peak
peak
°
C
12
11
Ω
Ω
°
C
mA
mW
9
Ω
13
APPLICATION FOR TELEPHONE (EXAMPLE)
LINE
Bell Ringing Signal
(75 Vr.m.s., 16 Hz)
PS2505-1, PS2506-1
PS2605, PS2606
PS2607, PS2608
etc.
PS2532-1,-2,-4,PS2532L-1,-2,-4
CC
V
Bell Ringing Detect
PS2521
PS2525
Photo MOS FET
Speech Circuit
Line Observe
Dial Pulse PS2532
Generator PS2533
V
CC
Dialer Circuit
CPU
14
IN
OUT
[MEMO]
PS2532-1,-2,-4,PS2532L-1,-2,-4
15
PS2532-1,-2,-4,PS2532L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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