NEC NE6501077 Datasheet

PRELIMINARY DATA SHEET

NE6501077

10 W L, S-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

GaAs MES FET

DESCRIPTION

The NE6501077 is power GaAs FET which provides
high gain, high efficiency and high output power in L, S
band.

To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.

FEATURES

• Class A operation

• High output power: 39.5 dBm (typ)

• High gain: 10.5 dB (typ)

• High power added efficiency: 40 % (typ)

• Hermetically sealed ceramic package

2.26 ±0.4

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSX 15 V

Gate to Drain Voltage VGDX –18 V

Gate to Source Voltage V

Drain Current ID 9.0 A

Gate Current IG 50 mA

Total Power Dissipation P

Channel Temperature Tch 175 ˚C

Storage Temperature Tstg –65 to +175 ˚C

Temperature Cycling T∞ –40 to +120 ˚C

C = 25 ˚C

* T

GSX –12 V

T(*) 50 W

PACKAGE DIMENSIONS (UNIT: mm)

17.5 ±0.5

14.3

1.0 ±0.1

DRAIN

8.9 ±0.4

GATE

6.35 ±0.4

4.0 MIN BOTH
LEADS

1.0

SOURCE

2.5

R1.25, 2 PLACES

+0.06

0.1

–0.02

0.2 MAX.

3.8 MAX.

Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive

device.

Document No. P10978EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

©

1996

MAXIMUM OPERATION RANGE

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Drain to Source Voltage VDS –1010V
Channel Temperature Tch – – 130 ˚C
Input Power Gcomp – – 3 dBcomp
Gate Resistance Rg – – 100 Ω

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Saturated Drain Current Idss 2.0 4.5 7.0 A Vds = 1.5 V, Vgs = 0 V
Pinch-off Voltage VP –3.5 –2.0 –0.5 V Vds = 2.5 V, Ids = 30 mA
Transconductance gm – 2600 – mS Vds = 2.5 V, Ids = 2 A
Thermal Resistance Rth – 3.5 4.0 ˚C/W Channel to Case

PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)

NE6501077

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Output Power Pout 39.0 39.5 – dBm f = 2.3 GHz, Vds = 10 V
Gate to Source Current Igs –10 – 10 mA
Power Added Efficiency
Linear Gain GL 9.5 10.5 – dB Pin ≤ 23 dBm(*)

η

add – 40 – %

Ids ≤ 1.0 A, Pin = 31.0 dBm
Rg = 100 Ω

* The other are the same as the above conditions.

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