NEC NE6500496 Datasheet
PRELIMINARY DATA SHEET
NE6500496
4 W L, S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
GaAs MES FET
DESCRIPTION
The NE6500496 is power GaAs FET which provides high
gain, high efficiency and high output power in L, S band.
To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
FEATURES
• Class A operation
• High output power: 36 dBm (typ)
• High gain: 11.5 dB (typ)
• High power added efficiency: 45 % (typ)
• Hermetically sealed ceramic package
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage VDSX 15 V
Gate to Drain Voltage V
Gate to Source Voltage VGSX –12 V
Drain Current ID 4.5 A
Gate Current I
Total Power Dissipation PT(*)25 W
Channel Temperature Tch 175 ˚C
Storage Temperature T
Temperature Cycling T∞ –40 to +120 ˚C
GDX –18 V
G 25 mA
stg –65 to +175 ˚ C
A = 25 ˚C)
* TC = 25 ˚C
PACKAGE DIMENSION (UNIT: mm)
4.0 MIN BOTHLEADS
4.3 ±0.2
0.1
0.2 MAX.
1.7 ±0.15
SOURCE
DRAIN
0.6 ±0.1
5.2 ±0.3
11.0 ±0.3
15.0 ±0.3
6.0 ±0.2
1.0 ± 0.1
GATE
2.2 ±0.3
φ
2 SLACES
5.0 MAX.
1.2
4.0
Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive
device.
Document No. P10971EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
MAXIMUM OPERATION RANDGE
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Drain to Source Voltage VDS –1010V
Channel Temperature Tch – – 130 ˚C
Input Power Gcomp – – 3 dBcomp
Gate Resistance Rg – – 200 Ω
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Saturated Drain Current Idss 1.0 2.3 3.5 A Vds = 1.5 V, Vgs = 0 V
Pinch-off Voltage VP –3.5 –2.0 –0.5 V Vds = 2.5 V, Ids = 15 mA
Transconductance gm – 1300 – mS Vds = 2.5 V, Ids = 1 A
Thermal Resistance Rth – 6.0 6.5 ˚C/W channel to case
NE6500496
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Output Power Pout 35.5 36.0 – dBm
Gate to Source Current Igs –5 – 5 mA
Power Added Efficiency
Linear Gain GL 11.0 11.5 – dB Pin ≤ 20 dBm (*)
η
add – 45 – %
f = 2.3 GHz, Vds = 10 V
Ids ≤ 0.4 A, Pin = 26.0 dBm
Rg = 200 Ω
* The other are the same as the above conditions.
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