NEC NE52118, NE52118-T1 Datasheet

PRELIMINARY DATA SHEET

GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

L to S BAND LOW NOISE AMPLIFIER

NPN GaAs HBT

FEATURES

For Low Noise & High Gain amplifiers

•

a

NF = 1.0 dB TYP. G OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) 4-pin super minimold package

•

Grounded Emitter Transistor

•

ORDERING INFORMATION (PLAN)

= 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)

NE52118

Part Number Package Marking Supplying Form NE52118-T1 4-pin super minimold V41 Embossed tape 8 mm wide.

Pin 3, pin 4 face to perforati on side of the tape. Qty 3 kp/reel.

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE52118)

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit Collector to Emitter Voltage V Collector to Base Voltage V Emitter to Base Voltage V Collector Current I Base Current I Total Power Dissipat i on P Junction Temperature T Storage Temperature T

CEO

CBO

EBO

C

B

tot

stg

5.0 V

3.0 V

3.0 V 7mA

0.3 mA

30 mW

j

+125 °C

–65 to +125 °C

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14544EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan

1999©

RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)

Parameter Symbol MIN. TYP. MAX. Unit Collector to Emitter Voltage V Collector Current I

CE

C

1.5 2.0 3.0 V

−

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter S ymbol Test Conditions MI N. TYP. MAX. Unit

I

EBO

CBO

CEO

Emitter to Base Leak Current I Collector to Base Leak Current I Collector to Emit ter Leak

Current DC current gain h Base to Emitter Forward Voltage V Base to Collector Forward

V

Voltage Noise Figure NF Associated Gain G Out Third-Order Distortion

OIP

Intercept Point Noise Figure NF Associated Gain G

FE

FBE

FBC

a

EBO

V

= 3 V

CBO

V

= 3 V

CEO

V

= 5 V

VCE = 2 V, IC = 3 mA 50 90 140 IBE = 100 µA 1.0 1.2 1.4 V IBC = 100 µA 0.7 1.0 1.3 V

VCE = 2 V, IC = 3 mA, f = 2 GHz,

3

S

= ZL = 50

Z

Ω

VCE = 2 V, IC = 5 mA, f = 2 GHz, Z

S

= ZL = 50

Ω

NE52118

36mA

−

0.2 1.0

0.5 2.0

1.0 1.5 dB

13.5 15

−

15

1.0

16.3

−

µ

A

µ

A

µ

A

−

dB

dBm

dB dB

2

Preliminary Data Sheet P14544EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25°°°°C)

DC CHARACTERISTICS

NE52118

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

50

40

(mW)

T

30

20

10

Total Power Dissipation P

0

0 25 50 75 100 125 150

Ambient Temperature T

A

(°C)

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

10

8

(mA)

C

6

4

2

Collector Current I

0

012345

Collector to Emitter Voltage V

CE

(V)

50 A 40 A 30 A 20 A

B

= 10 A

I

COLLECTOR CURRENT vs. DC BASE VOLTAGE

10

8

(mA)

C

6

4

2

Collector Current I

0

1 000

FE

100

µ µ

10

µ

DC Current Gain h

µ µ

1

VCE = 2 V

0 0.5 1 1.5

DC Base Voltage V

BE

(V)

DC CURRENT GAIN vs. COLLECTOR CURRENT

VCE = 2 V

0.1 1 10 Collector Current I

C

(mA)

NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT

6

5

f = 2.0 GHz

CE

= 2 V

V

S

= ZL = 50 Ω

Z

4

a

G

3

2

Noise Figure NF (dB)

NF

1

0

1 10 100

Collector Current I

C

(mA)

Preliminary Data Sheet P14544EJ1V0DS00

30

25

(dB)

a

20

15

10

Associated Gain G

5

0

3

GAIN CHARACTERISTICS

INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. FREQUENCY

40 35 30

(dB)

2

l

25

21e

20 15 10

5 0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain lS

0.1 1.0 10.0

MSG

2

lS

21e

l

Frequency f (GHz)

VCE = 2 V

C

= 3 mA

I

MAG

NE52118

INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. COLLECTOR CURRENT

30

f = 1 GHz

CE

= 2 V

V

(dB)

2

l

21e

25

20

MSG

21e

lS

2

l

15

10

5

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain lS

Collector Current I

101 100

C

(mA)

INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. COLLECTOR CURRENT

30

f = 2 GHz

CE

= 2 V

V

25

(dB)

20

2

l

21e

15

lS

10

5

Insertion Power Gain lS

101 100

0

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Collector Current I

MSG

21e

2

l

C

(mA)

4

Preliminary Data Sheet P14544EJ1V0DS00