NEC NE434S01-T1B, NE434S01-T1 Datasheet
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE434S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE434S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 Pm
ORDERING INFORMATION
PART NUMBER SUPPLYING FORM MARKING
NE434S01-T1 Tape & reel 1000 pcs./reel E
NE434S01-T1B Tape & reel 4000 pcs./reel
ABSOLUTE MAXIMUM RATINGS (TA = 25 qqqqC)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current I
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
DS
GS
D
tot
ch
stg
4.0 V
–3.0 V
DSS
I
300 mW
125
–65 to +125
mA
C
q
C
q
2
0.125 ± 0.05
PACKAGE DIMENSIONS
(Unit: mm)
2.0 ± 0.2
1
E
3
0.65 TYP.
1.9 ± 0.2
1.6
0.4 MAX.
4.0 ± 0.2
2.0 ± 0.2
4
0.5 TYP.
1. Source
2. Drain
3. Source
4. Gate
1.5 MAX.
2.0 ± 0.2
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit
Drain to Source Voltage V
Drain Current I
Input Power P
Document No. P11344EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
DS
D
in
2 2.5 V
15 20 mA
0 dBm
1996©
ELECTRO-OPTICAL CHARACTERISTICS (TA = 25 qqqqC)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
NE434S01
Gate to Source Leak Current I
Saturated Drain Current I
Gate to Source Cutoff Voltage V
Transconductance g
SGO
DSS
GS(off)
m
0.5 10
P
AVGS = ð3 V
20 80 150 mA VDS = 2 V, VGS = 0 V
ð0.2 ð0.9 ð2.5 V VDS = 2 V, ID = 100 PA
70 85 mS VDS = 2 V, ID = 14 mA
Noise Figure NF 0.35 0.45 dB VDS = 2 V, ID = 15 mA,
Associated Gain G
a
13.0 15.5 dB f = 4 GHz
2
TYPICAL CHARACTERISTICS (TA = 25 qqqqC)
NE434S01
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
400
300
200
100
Ptot - Total Power Dissipation - mW
0 50 100 150 200 250
A - Ambient Temperature - ˚C
T
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
V
DS = 2 V
80
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
VGS = 0 V
80
–0.2 V
60
40
–0.4 V
ID - Drain Current - mA
20
–0.6 V
0 12345
V
DS - Drain to Source Voltage - V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2 V
D = 15 mA
I
20
MSG.
60
40
ID - Drain Current - mA
20
0
–2.0
V
GS - Gate to Source Voltage - V
–1.0 0
Gain Calculations
21
~ 1 + ~'~2 ð ~S11~2 ð ~S22~
~S
MSG. = K =
12
~S
~ 2~S12~~S21~
MAG. = (K r K
~S21~
12
~S
~
2
ð1)
—
'
= S11˜S22 ð S21˜S
16
12
- Forward Insertion Gain - dB
2
8
21S|
MSG. - Maximum Stable Gain - dB
MAG. - Maximum Available Gain - dB
|S
4
1
2
|S21S|
MAG.
2 4 6 8 10 14 20 30
f - Frequency - GHz
2
12
3
S-PARAMETERS
VDS = 2 V, ID = 15 mA
START 2 Ghz, STOP 18 Ghz, STEP 500 Mhz
NE434S01
Marker
1:
4 GHz
2:
8 GHz
3:
12 GHz
16 GHz
4:
18 GHz
5:
S11
1.0
0.5 2.0
3
0 ∞
2
–0.5 –2.0
–1.0
21
S
+90˚
5
4
1
Rmax. = 1
S
12
+90˚
+135˚ +45˚
1
±180˚ 0
–135˚ –45˚
–90˚
S
22
1.0
2
3
5
4
Rmax. = 0.25
+135˚ +45˚
1
2
±180˚ 0
–135˚ –45˚
–90˚
5
3
4
Rmax. = 1.0
0.5 2.0
5
4
0 ∞
–0.5 –2.0
3
2
–1.0
1
Rmax. = 1
4
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