NEC NE325S01-T1, NE325S01-T1B Datasheet

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE325S01

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE325S01 is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS
and another commercial systems.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz

• Gate Length : L

• Gate Width : Wg = 200 µm

g ≤ 0.20

µ

m

ORDERING INFORMATION

PART NUMBER SUPPLYING FORM MARKING
NE325S01-T1 Tape & reel 1000 pcs./reel D
NE325S01-T1B Tape & reel 4000 pcs./reel

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS –3.0 V
Drain Current I
Gate Current IG 100
Total Power Dissipation Ptot 165 mW
Channel Temperature T
Storage Temperature Tstg –65 to +125 ˚ C

D IDSS mA

µ

ch 125 ˚ C

A

2

0.125 ±0.05

PACKAGE DIMENSIONS

(Unit: mm)

2.0 ±0.2

1

2.0 ±0.2

D

3

0.65 TYP.

1.9 ±0.2

1.6

0.4MAX

4.0 ±0.2

4

1. Source

2. Drain

3. Source

4. Gate

1.5 MAX

2.0 ±0.2

0.5 TYP.

RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit
Drain to Source Voltage VDS 23V
Drain Current ID 10 20 mA
Input Power Pin 0 dBm

Document No. P11138EJ3V0DS00 (3rd edition)
Date Published October 1996 N
Printed in Japan

©

1996

NE325S01

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Gate to Source Leak Current IGSO 0.5 10
Saturated Drain Current IDSS 20 60 90 mA VDS = 2 V, VGS = 0 V
Gate to Source Cutoff Voltage VGS(off) –0.2 –0.7 –2.0 V VDS = 2 V, ID = 100 µA
Transconductance gm 45 60 mS VDS = 2V, ID = 10 mA
Noise Figure NF 0.45 0.55 dB VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain Ga 11.0 12.5 dB

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

µ

AVGS = –3 V

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

250

200

150

100

50

Ptot - Total Power Dissipation - mW

0 50 100 150 200 250

T

A - Ambient Temperature - ˚C

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

VDS = 2 V

60

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

100

80

60

40

ID - Drain Current - mA

20

0 3.01.5

V

DS - Drain to Source Voltage - V

MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY

24

20

MSG.

VGS = 0 V

–0.2 V

–0.4 V

–0.6 V
–0.8 V

VDS = 2 V
I

D = 10 mA

40

20

ID - Drain Current - mA

0

–2.0 –1.0 0

V

GS - Gate to Source Voltage - V

2

16

2

12

- Forward Insertion Gain - dB

2

8

21s|

MSG. - Maximum Stable Gain - dB

MAG. - Maximum Available Gain - dB

|S

4

13024 206 8 10 14

|S21S|

f - Frequency - GHz

MAG.

Gain Calculations

NE325S01

1 | | – | S | – | S |

|S |

MSG.

MAG.

21

=

12

|S |

|S |

21

=±

(K K –1)

12

|S |

2

+

K

=

∆

SS– SS11 22 21 12= ••

NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY



VDS = 2 V
I

D

= 10 mA



a

G



1.0

NF - Noise Figure - dB

0.5

NF

0

1302

4206 8 10 14

f - Frequency - GHz

222

∆

11 22

12 21

2 |S | |S |

24

20

16

2.0

1.5

12

NF - Noise Figure - dB

- Associated Gain - dB

a

G

8

1.0

0.5

4

NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT

VDS = 2 V
f = 12 GHz

G

a

NF

ID - Drain Current - mA

14

13

12

11

10

- Associated Gain - dB

a

G

3020100

3

S-PARAMETERS

VDS = 2 V, ID = 10 mA

START 2 GHz, STOP 18 GHz, STEP 500 MHz

S

11

1.0

S

12

+90˚

NE325S01



Marker

4 GHz

1:

8 GHz

2:

12 GHz

3:

16 GHz

4:

18 GHz

5:

0.5 2.0

5

4

0 ∞

3

1

–0.5 –2.0

+135˚ +45˚

1

2

–1.0

S

+90˚

Rmax. = 1

21

2

+135˚

2

±180˚ 0

1

3

+45˚

4

5

–135˚ –45˚

–90˚

S

22

Rmax. = 0.25

1.0

0.5

5

2.0

4

±180˚

–135˚

–90˚

3

0

5

4

–45˚

0 ∞

–0.5

Rmax. = 5

3

4

–1.0

2

1

–2.0

Rmax. = 1