NEC NE32584C-SL, NE32584C-T1 Datasheet

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz

• Gate Length : Lg d 0.2 Pm

• Gate Width..: Wg = 200 Pm

ORDERING INFORMATION

SUPPLYING

FORM NE32584C-SL STICK L = 1.7 mm MIN. D NE32584C-T1 Tape & reel

1000 pcs./reel

NE32584C-T1A Tape & reel

5000 pcs./reel

L = 1.0 r 0.2 mm

MARKINGLEAD LENGTHPART NUMBER

NE32584C

PACKAGE DIMENSIONS

(Unit: mm)

1.78 ±0.2

L

D

2

1.78 ±0.2

L

3

1

L

0.5 TYP. 1.7 MAX.0.1

4

L

0.5 TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25

Drain to Source Voltage V Gate to Source Voltage V Drain Current I Gate Current I Total Power Dissipation P Channel Temperature T Storage Temperature T

RECOMMENDED OPERATING CONDITION (TA = 25

CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit Drain to Source Voltage V Drain Current I Input Power P

Document No. P12275EJ2V0DS00 (2nd edition) (Previous No. TC-2515) Date Published February 1997 N Printed in Japan

C)

qqqq

DS GS D G

tot ch

stg

DS

D

in

4.0 V

–3.0 V

DSS

I 100 165 mW 150

–65 to +150

mA

A

P

C

q

C

q

C)

qqqq

23V

10 20 mA

0 dBm

1.

2.

3.

4.

Source Drain Source Gate

1994©

ELECTRICAL CHARACTERISTICS (TA = 25 qqqqC)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

NE32584C

Gate to Source Leak Current I Saturated Drain Current I Gate to Source Cutoff Voltage V Transconductance g

GSO

DSS

GS(off)

m

0.5 10

P

AVGS = ð3 V

20 60 90 mA VDS = 2 V, VGS = 0 V

ð0.2 ð0.7 ð2.0 V VDS = 2 V, ID = 100 PA

45 60 mS VDS = 2 V, ID = 10 mA Noise Figure NF 0.45 0.55 dB VDS = 2 V, ID = 10 mA, f = 12 GHz Associated Gain G

a

11.0 12.5 dB

TYPICAL CHARACTERISTICS (TA = 25 qqqqC)

TOTAL POWER DISSIPATION vs.

250

AMBIENT TEMPERATURE

200

150

100

50

Pout - Total Power Dissipation - mW

0 50 100 150 200 250

T

A - Ambient Temperature - ¡C

100

80

60

40

- Drain Current - mA

D

I

20

0 1.5 3.0

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

V

DS

- Drain to Source Voltage - V

GS

= 0 V

–0.2 V

–0.4 V

–0.6 V –0.8 V

60

40

20

ID - Drain Current - mA

0

–2.0 –1.0 0

2

DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE

V

GS - Gate to Source Voltage - V

DS = 2 V

MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY

24

20

16

2

|S

21s

|

12

- Forward Insertion Gain - dB

2

8

|

21s

MSG. - Maximum Stable Gain - dB

MAG. - Maximum Available Gain - dB

|S

0

f - Frequency - GHz

MSG.

V

DS

= 2 V

ID = 10 mA

MAG.

3020141086321

Gain Calculations

NE32584C

21

S

~

MSG. = K =

MAG. = (K r K

~

12

S

~

21

S

~

12

S

~

NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY

2

1)

ð

—

G

a

= S11 • S22 ð S21 • S

'

VDS = 2 V I

D

1.0

NF - Noise Figure - dB

0.5 NF

0

1301410864202

f - Frequency - GH

Z

1 +

= 10 mA

~'~

2

2~S

ð ~S

~

12

21

S

~~

~

12

2

11

24

20

16

12

- Associated Gain - dB

a

G

8

4

2

22

~

NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT

DS

= 2 V

V f = 12 GH

2.0

1.5

1.0

NF - Noise Figure - dB

0.5

0

Z

G

a

NF

D

- Drain Current - mA

I

14

13

12

11

10

- Associated Gain - dB

a

G

302010

3

NE32584C

S-PARAMETERS

VDS = 2 V, ID = 10 mA START 2 GHz, STOP 18 GHz, STEP 500 MHz

S11

1.0

5

0

4

3

–0.5

2

–1.0

1

2.00.5

–2.0

Rmax. = 1

Marker 1 : 4 GHz 2 : 8 GHz 3 : 12 GHz

1

4 : 16 GHz 5 : 18 GHz

2

3

4

+45°

0

–45°

Rmax. = 0.25

S12

+90°

+135°

∞

±180°

5

–135°

–90°

±180°

+135°

S21

+90°

+45°

1

–90°

2

3

4

5

R

–45°–135°

max. = 5

0

S22

1.0

2.00.5

5

4

3

2

–1.0

1

–2.0–0.5

Rmax. = 1

∞

4