NEC NE32484A, NE32484A-T1, NE32484A-SL, NE32484A-T1A Datasheet

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE32484A

C to Ku BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

The NE32484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz

• Gate Length : L

• Gate Width : Wg = 200 µm

g ≤ 0.25

µ

m

ORDERING INFORMATION

PART NUMBER

NE32484A-SL STICK L = 1.7 mm MIN.
NE32484A-T1 Tape & reel L = 1.0 ± 0.2 mm

NE32484A-T1A Tape & reel L = 1.0 ± 0.2 mm

SUPPLYING
FORM

1000 pcs./reel T

5000 pcs./reel

LEAD LENGTH

MARKING

PACKAGE DIMENSIONS

(Unit: mm)

1.78 ±0.2

L

T

2

1.78 ±0.2

L

3

1

L

0.5 TYP. 1.7 MAX.0.1

4

L

0.5 TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS –3.0 V
Drain Current I
Gate Current IG 100
Total Power Dissipation Ptot 165 mW
Channel Temperature T
Storage Temperature Tstg –65 to +150 ˚ C

RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. Unit
Drain to Source Voltage VDS 23V
Drain Current ID 10 20 mA
Input Power Pin 0 dBm

Document No. P11785EJ3V0DS00 (3rd edition)
(Previous No. TC-2316)
Date Published July 1996 P
Printed in Japan

D IDSS mA

µ

ch 150 ˚ C

Source

1.
Drain

2.
Source

3.
Gate

4.

A

©

1991

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Gate to Source Leak Current IGSO 0.5 10

µ

AVGS = –3 V
Saturated Drain Current IDSS 15 40 70 mA VDS = 2 V, VGS = 0 V
Gate to Source Cutoff Voltage VGS(off) –0.2 –0.8 –2.0 V VDS = 2 V, ID = 100 µA
Transconductance gm 45 60 mS VDS = 2 V, ID = 10 mA
Noise Figure NF 0.6 0.7 dB VDS = 2 V, ID = 10 mA,
Associated Gain Ga 10.0 11.0 dB

f = 12 GHz

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

NE32484A

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

250

200

150

100

50

Ptot - Total Power Dissipation - mW

0 50 100 150 200 250

A - Ambient Temperature - ˚C

T

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

50

DS = 2 V

V

40

30

20

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

50

40

30

20

ID - Drain Current - mA

10

0

15

DS - Drain to Source Voltage - V

V

234

MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY

24

20

MSG.

16

2

|S21

S|

12

V

GS

= 0 V

–0.2 V

–0.4 V

–0.6 V

DS = 2 V

V
ID = 10 mA

MAG.

ID - Drain Current - mA

10

0
–2.0

GS - Gate to Source Voltage - V

V

Gain Calculations

|S |

MSG.=

MAG

21
12

|S |

S

||

21

=±−

KK.

(

12

S

||

2

–1.0 0

2

1

)

- Forward Insertion Gain - dB

2

21s|

MSG. - Maximum Stable Gain - dB

MAG. - Maximum Available Gain - dB

|S

2112

+− −1 | | | | | |

K

∆

∆

=

=⋅−⋅SS SS

2

SS

||||

11 22 21 12

8

4

1

SS

12 21

2 4 6 8 10 14 20 30

2

22

f - Frequency - GHz

NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY

5

4

Ga

3

DS

= 2 V

V
ID = 10 mA

24

20

16

NE32484A

NOISE FIGURE, ASSOCIATED GAIN vs. 
RATIO OF DRAIN CURRENT TO ZERO-GATE 
VOLTAGE CURRENT

3

2

V

DS

= 2 V

f = 12 GHz

Ga

15

10

2

NF - Noise Figure - dB

1

NF

0

1246 30

810 14 20

f - Frequency - GHz

12

NF - Noise Figure - dB

Ga - Associated Gain - dB

8

4

IDS/I

1

NF

5

0

1

DSS

- Ratio of Drain Current to Zero-Gate Voltage Current - %

46810 20 4060

2 100

0

Ga - Associated Gain - dB

3

S-Parameters

VDS = 2 V, ID = 10 mA
START 500 MHz, STOP 18 GHz, STEP 500 MHz

S

11

1.0

S

12

+90˚

NE32484A

Marker



1:

4 GHz

2:

8 GHz

3:

12 GHz

4:

16 GHz

5:

18 GHz

±180˚

0.5

5

0

–0.5

+135˚

4
3

2

–1.0

S

21

+90˚

1

2.0

2.01.00.5

–2.0

1

Rmax. = 1

+45˚

2

3

∞

±180˚

0

+135˚

21

–135˚

–90˚

S

22

1.0

0.5

5

0

4

3

3

4

5

Rmax. = 0.25

2.01.00.5

+45˚

0

–45˚

2.0

∞

4

–135˚

–90˚

5

–45˚

Rmax. = 5

–0.5

2

–1.0

1

–2.0

Rmax. = 1

4