DATA SHEET
LASER DIODE
NDL7910P
1 550 nm OPTICAL FIBER COMMUNICATIONS
EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE
FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS
DESCRIPTION
The NDL7910P is an EA modulator integrated 1 550 nm DFB-LD for 2.5 Gb/s. The newly developed bandgap
energy controlled Selective MOVPE technology is utilized as fabrication method. It is designed for 2.5 Gb/s ultralongreach applications.
FEATURES
• Integrated electroabsorption modulator
• Low modulation voltage
• Wavelength selectable for ITU-T standards
• 14-pin butterfly package
1.25
10 MIN.
8.89±0.13
0.75
8.2±0.2
1.0
5.6
15.24
2.54
7
8
0.5
20.83±0.13
26.04±0.13
29.97 ±0.25
14
PACKAGE DIMENSIONS
in millimeters
TOP VIEW
#7 #1
4– 2.67
φ
22.3
1
0.9
6.0
12.7±0.15
+–
Cooler
LD
#8 #14
PD
Thermistor
MOD
PIN CONNECTIONS
Optical Fiber (SMF)
Length: 1 m
5.15
Pin No.
1
2
3
4
5
6
7
Function
Thermistor
Thermistor
LD DC Bias
PD Anode
PD Cathode
Cooler Anode
Cooler Cathode
Pin No.
8
9
10
11
12
13
14
Function
GND
GND
NC
GND
Signal Input (MOD),
50 Ω RF Input
GND
GND
The information in this document is subject to change without notice.
Document No. P12456EJ3V0DS00 (3rd edition)
Date Published November 1998 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
©
1997
ORDERING INFORMATION
Part Number Available Connector
NDL7910P Without Connector
NDL7910PC With FC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °°°°C, unless otherwise specified)
Parameter Symbol Ratings Unit
NDL7910P
FLD
RLD
FPD
RPD
f
10 mW
150 mA
2.0 V
Fm
Rm
1V
5V
1mA
10 V
C
C
C
stg
sld
1.5 A
2.5 V
−
20 to +70
−
40 to +85
260
Optical Output Power from Fiber P
Forward Current of LD I
Reverse Voltage of LD V
Forward Voltage of Modulator V
Reverse Voltage of Modulator V
Forward Current of PD I
Reverse Voltage of PD V
Cooler Current I
Cooler Voltage V
Operating Case Temperature T
Storage Temperature T
Lead Soldering Temperature (10 s) T
ELECTRO-OPTICAL CHARACTERISTICS
LD
= 25 °°°°C, TC = −−−−20 to +70 °°°°C, unless otherwise specified)
(T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Operating Current I
Modulation Center Voltage V
Modulation Voltage V
Forward Voltage of LD V
Threshold Current I
Optical Output Power from Fiber P
Peak Emission Wavel ength
Spectral Line Width
Side Mode Suppression Ratio SMSR I
Extinction Ratio ER
Cut-off Frequency f
Rise Time t
Fall Time t
Isolation I
op
Rmc
Rmpp
FLDIFLD
th
f
λ
p
∆
ν
C
r
f
s
op
= I
VRm = 0 V, I
FLD
I
FLD
I
FLD
FLD
I
FLD
I
FLD
I
FLD
I
FLD
= I
= Iop, VRm = 0 V 1 545 1 560 nm
= Iop, –20 dB, Under modulation
= Iop, VRm = 0 V 30 dB
= Iop, Under modulation
= Iop, VRm = 1/2 V
= Iop, 20-80 %, Under modulation
= Iop, 80-20 %, Under modulation
op
Rmpp
, –3 dB, 50
°
C
°
C
°
C
50 100 mA
0.5 1.5 V
23V
1.8 V
720mA
0.5 mW
*1
*1
10 dB
Ω
3.2 GHz
*1
*1
4GHz
125 ps
125 ps
30 dB
2.48832 Gb/s, PRBS 2
*1
2
23-1
, VRm =V
Rmc
± 1/2 V
Rmpp
, NEC Test System
ELECTRO-OPTICAL CHARACTERISTICS
LD
(Applicable to Monitor PD: T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
= 25 °°°°C, TC = −−−−20 to +70 °°°°C)
NDL7910P
m
Monitor Current I
Dark Current I
Tracking Error
Monitor Capacitance C
f
γ = 10 log
*1
P
P
op
P
FLD
I
D
V
*1
γ
Im = const. 0.5 dB
t
V
f
(mW)
P
op
P
f
0
ELECTRO-OPTICAL CHARACTERISTICS
LD
(Applicable to Thermistor and TEC: T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
= 25 °°°°C, TC = −−−−20 to +70 °°°°C)
= Iop, VRm = 0 V 20 1 000
RPD
= 5 V 10 nA
RPD
= 5 V, f = 1 MHz 15 pF
TLD = TC = 25 ˚C
TLD = 25 ˚C, TC = –20 to +70 ˚C
I
m
(@ P
f
(25 ˚C) = Pop)
I
m
µ
A
Thermistor Resistanc e R TLD = 25 °C 9.5 10.0 10.5 k
B Constant B 3 300 3 400 3 500 K
∆
Cooler Current I
Cooler Voltage V
C
T = 70 − T
∆
C
T = 70 − T
set
set
1.5 A
2.5 V
Ω
3
TYPICAL CHARACTERISTICS (TLD = 25 °°°°C, unless otherwise specified)
NDL7910P
OPTICAL OUTPUT POWER FROM FIBER vs.
FORWARD CURRENT OF LD (CW)
2.0
1.5
1.0
0.5
Optical Output Power from Fiber Pf (mW)
0
Remark
50
Forward Current of LD IFLD (mA)
100
The graphs indicate nominal characteristics.
Rm = 0 V
V
0.5 V
1 V
2 V
3 V
150 200
EXTINCTION RATIO vs. MODULATION
VOLTAGE (CW)
0
5
10
15
Extinction Ratio ER (dB)
20
25
0
12
Modulation Voltage VRmpp (V)
3
4
DFB-LD FAMILY FOR TELECOM
Absolute Maximum Rat i ngs Typical Characteristi cs
C
Part Number
T
(°C)
T
(°C)
NDL7910P
λ
stg
th
I
(mA)
P
(mW)
f
TYP. MIN. TYP.
(nm)
C
SDH Application Package
NDL7603P Series
−
40 to +85
NDL7620P Series 0 to +70
NDL7701P Series
NDL7705P Series
NX8562LB
NX8563LB Series
NDL7910P
Wavelength selectable for ITU-T standards upon request.
*1
Wavelength selectable for ITU-T standards.
*2
−
20 to +85
−
40 to +85
−
20 to +65
−
20 to +65
−
20 to +70
−
40 to +85 15 2 1 310
−
40 to +85 45 (MAX.) 2 1 310
−
40 to +85 15 2 1 550
−
40 to +85 15 2 1 550
−
40 to +85 20 20
−
40 to +85 20 10
−
40 to +85 7 0.5
1 550
ITU-T
1 550
≤
STM-4 : 622 Mb/s Coaxial
≤
STM-16: 2.5 Gb/s Coaxial
≤
STM-4 : 622 Mb/s Coaxial
≤
STM-4 : 622 Mb/s Coaxial
*1
CW Light Source for
external modulator
*2
CW Light Source for
external modulator
*1
≤
STM-16: 2.5 Gb/s
EA modulator
integrated DFB-LD
BFY
BFY
BFY
5
NDL7910P
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system C11159E
Quality grades on NEC semic onductor devices C11531E
Semiconductor device mounting technology manual C10535E
Semiconductor selection guide X10679E
6
[MEMO]
NDL7910P
7
NDL7910P
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEC Corporation
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER mW MAX
WAVELENGTH nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
NEC Building, 7-1, Shiba 5-chome,
Minato-ku, Tokyo 108-01, Japan
Type number:
Manufactured:
Serial Number:
This product conforms to FDA
regulations as applicable
to standards 21 CFR Chapter 1.
Subchapter J.
M4 96. 5
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