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DATA SHEET
LASER DIODE
NDL7910P
1 550 nm OPTICAL FIBER COMMUNICATIONS
EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE
FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS
DESCRIPTION
The NDL7910P is an EA modulator integrated 1 550 nm DFB-LD for 2.5 Gb/s. The newly developed bandgap
energy controlled Selective MOVPE technology is utilized as fabrication method. It is designed for 2.5 Gb/s ultralongreach applications.
FEATURES
• Integrated electroabsorption modulator
• Low modulation voltage
• Wavelength selectable for ITU-T standards
• 14-pin butterfly package
1.25
10 MIN.
8.89±0.13
0.75
8.2±0.2
1.0
5.6
15.24
2.54
7
8
0.5
20.83±0.13
26.04±0.13
29.97 ±0.25
14
PACKAGE DIMENSIONS
in millimeters
TOP VIEW
#7 #1
4– 2.67
φ
22.3
1
0.9
6.0
12.7±0.15
+–
Cooler
LD
#8 #14
PD
Thermistor
MOD
PIN CONNECTIONS
Optical Fiber (SMF)
Length: 1 m
5.15
Pin No.
1
2
3
4
5
6
7
Function
Thermistor
Thermistor
LD DC Bias
PD Anode
PD Cathode
Cooler Anode
Cooler Cathode
Pin No.
8
9
10
11
12
13
14
Function
GND
GND
NC
GND
Signal Input (MOD),
50 Ω RF Input
GND
GND
The information in this document is subject to change without notice.
Document No. P12456EJ3V0DS00 (3rd edition)
Date Published November 1998 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
©
1997
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ORDERING INFORMATION
Part Number Available Connector
NDL7910P Without Connector
NDL7910PC With FC-PC Connector
ABSOLUTE MAXIMUM RATINGS (TC = 25 °°°°C, unless otherwise specified)
Parameter Symbol Ratings Unit
NDL7910P
FLD
RLD
FPD
RPD
f
10 mW
150 mA
2.0 V
Fm
Rm
1V
5V
1mA
10 V
C
C
C
stg
sld
1.5 A
2.5 V
−
20 to +70
−
40 to +85
260
Optical Output Power from Fiber P
Forward Current of LD I
Reverse Voltage of LD V
Forward Voltage of Modulator V
Reverse Voltage of Modulator V
Forward Current of PD I
Reverse Voltage of PD V
Cooler Current I
Cooler Voltage V
Operating Case Temperature T
Storage Temperature T
Lead Soldering Temperature (10 s) T
ELECTRO-OPTICAL CHARACTERISTICS
LD
= 25 °°°°C, TC = −−−−20 to +70 °°°°C, unless otherwise specified)
(T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Operating Current I
Modulation Center Voltage V
Modulation Voltage V
Forward Voltage of LD V
Threshold Current I
Optical Output Power from Fiber P
Peak Emission Wavel ength
Spectral Line Width
Side Mode Suppression Ratio SMSR I
Extinction Ratio ER
Cut-off Frequency f
Rise Time t
Fall Time t
Isolation I
op
Rmc
Rmpp
FLDIFLD
th
f
λ
p
∆
ν
C
r
f
s
op
= I
VRm = 0 V, I
FLD
I
FLD
I
FLD
FLD
I
FLD
I
FLD
I
FLD
I
FLD
= I
= Iop, VRm = 0 V 1 545 1 560 nm
= Iop, –20 dB, Under modulation
= Iop, VRm = 0 V 30 dB
= Iop, Under modulation
= Iop, VRm = 1/2 V
= Iop, 20-80 %, Under modulation
= Iop, 80-20 %, Under modulation
op
Rmpp
, –3 dB, 50
°
C
°
C
°
C
50 100 mA
0.5 1.5 V
23V
1.8 V
720mA
0.5 mW
*1
*1
10 dB
Ω
3.2 GHz
*1
*1
4GHz
125 ps
125 ps
30 dB
2.48832 Gb/s, PRBS 2
*1
2
23-1
, VRm =V
Rmc
± 1/2 V
Rmpp
, NEC Test System
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ELECTRO-OPTICAL CHARACTERISTICS
LD
(Applicable to Monitor PD: T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
= 25 °°°°C, TC = −−−−20 to +70 °°°°C)
NDL7910P
m
Monitor Current I
Dark Current I
Tracking Error
Monitor Capacitance C
f
γ = 10 log
*1
P
P
op
P
FLD
I
D
V
*1
γ
Im = const. 0.5 dB
t
V
f
(mW)
P
op
P
f
0
ELECTRO-OPTICAL CHARACTERISTICS
LD
(Applicable to Thermistor and TEC: T
Parameter Symbol Conditions MIN. TYP. MAX. Unit
= 25 °°°°C, TC = −−−−20 to +70 °°°°C)
= Iop, VRm = 0 V 20 1 000
RPD
= 5 V 10 nA
RPD
= 5 V, f = 1 MHz 15 pF
TLD = TC = 25 ˚C
TLD = 25 ˚C, TC = –20 to +70 ˚C
I
m
(@ P
f
(25 ˚C) = Pop)
I
m
µ
A
Thermistor Resistanc e R TLD = 25 °C 9.5 10.0 10.5 k
B Constant B 3 300 3 400 3 500 K
∆
Cooler Current I
Cooler Voltage V
C
T = 70 − T
∆
C
T = 70 − T
set
set
1.5 A
2.5 V
Ω
3