NEC 2SK2476 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2476 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
2SK2476
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 590 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±3.0 A
Drain Current (pulse)* ID(pulse) ±9.0 A
Total Power Dissipation (Tc = 25 ˚C) PT1 40 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 37.8 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
A = 25 ˚C) PT2 2.0 W
VDSS 800 V
GSS ±30 V
AS 3.0 A
10.0±0.3 4.5±0.2
15.0±0.3
0.7±0.1
2.54
123
MP-45F (ISOLATED TO-220)
3.2±0.2
3±0.14±0.2
1.5±0.2
2.54
Drain
2.7±0.2
12.0±0.213.5MIN.
2.5±0.11.3±0.2
0.65±0.1
1. Gate
2. Drain
3. Source
Document No. D10268EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
Gate
Source
Body
Diode
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2476
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 3.4 5.0 VGS = 10 V, ID = 2.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.0 VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 590 VDS = 10 V
Output Capacitance Coss 100 VGS = 0
Reverse Transfer Capacitance Crss 20 f = 1 MHz
Turn-On Delay Time td (on) 15 ID = 2.0 A
Rise Time tr 5 VGS = 10 V
Turn-Off Delay Time td (off) 45 VDD = 150 V
Fall Time tf 7 R
Total Gate Charge QG 20 ID = 3.0 A
Gate to Source Charge QGS 5 VDD = 450 V
Gate to Drain Charge QGD 10 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 3.0 A, VGS = 0
Reverse Recovery Time trr 510 IF = 3.0 A, VGS = 0
Reverse Recovery Charge Qrr 2.2 di/dt = 50 A/µs
UNIT
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
= 10 Ω
G
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
G = 2 mA
PG.
I
50 Ω
RL
VDD
VDS
Test Circuit 2 Switching Time
L
V
DD
PG.
RG
G = 10 Ω
R
R
VDD
L
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
D.U.T.
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SK2476
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
= 10 V)
GS
ID(DC)
Power Dissipation Limited
1
ID - Drain Current - A
Limited (at V
DS(on)
R
ID(pulse)
100 ms
PW = 10 s
1 ms
10 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
PT - Total Power Dissipation - W
0
20
40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10
VGS = 20 V
µ
5
10 V
8 V
6 V
ID - Drain Current - A
TC = 25 ˚C
Single Pulse
0.1
1
10 100 1000
V
DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
TA = –25 ˚C
10
25 ˚C
75 ˚C
125 ˚C
1.0
ID - Drain Current - A
0.1
0
51015
GS - Gate to Source Volta
V
e - V
Pulsed
VDS = 10 V
0
10
V
DS - Drain to Source Voltage - V
20
30
40
3
Loading...