NEC 2SK2462 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
2SK2462
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
RDS(on)1 = 0.14 Ω MAX. (@ VGS = 10 V, ID = 8.0 A)
DS(on)2 = 0.17 Ω MAX. (@ VGS = 4 V, ID = 8.0 A)
R
• Low Ciss Ciss = 790 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 100 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±15 A
Drain Current (pulse)* ID(pulse) ±60 A
Total Power Dissipation (T
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
Single Avalanche Current** IAS 15 A
Single Avalanche Energy** EAS 22.5 mJ
µ
* PW ≤ 10
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
s, Duty Cycle ≤ 1 %
c = 25 ˚C) PT1 30 W
stg –55 to +150 ˚C
10.0 ±0.3
15.0 ±0.3
0.7 ±0.1
123
MP-45F(ISOLATED TO-220)
3.2 ±0.2
3 ±0.1
4 ±0.2
1.3 ±0.2
1.5 ±0.2
2.542.54
4.5 ±0.2
2.7 ±0.2
12.0 ±0.2
MIN.
13.5
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
Drain
Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan
Gate
Gate Protection
Diode
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.
Body
Diode
Source
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2462
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS(on)1 0.10 0.14 VGS = 10 V, ID = 8.0 A
Drain to Source On-Resistance RDS(on)2 0.12 0.17 VGS = 4 V, ID = 8.0 A
Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 7.0 14 VDS = 10 V, ID = 8.0 A
Drain Leakage Current IDSS 10 VDS = 100 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 790 VDS = 10 V
Output Capacitance Coss 280 VGS = 0
Reverse Transfer Capacitance Crss 88 f = 1 MHz
Turn-On Delay Time td(on) 16 ID = 8.0 A
Rise Time tr 110 VGS(on) = 10 V
Turn-Off Delay Time td(off) 88 VDD = 50 V
Fall Time tf 62 RG = 10 Ω
Total Gate Charge QG 33 ID = 15 A
Gate to Source Charge QGS 5.4 VDD = 80 V
Gate to Drain Charge QGD 25 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.1 IF = 15 A, VGS = 0
Reverse Recovery Time trr 160 IF = 15 A, VGS = 0
Reverse Recovery Charge Qrr 670 di/dt = 100 A/µs
UNIT
Ω
Ω
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
V
GS
= 20 → 0 V
PG
R
DD
V
G
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
Starting T
L
V
DD
PG.
V
GS
0
V
DS
t
µ
t = 1 s
Duty Cycle ≤ 1 %
ch
R
G
= 10 Ω
D.U.T.
R
G
Test Circuit 3 Gate Charge
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
L
R
V
DD
V
GS
Wave
Form
I
D
Wave
Form
V
I
GS
0
D
10 %
10 %
0
t
d (on)
90 %
t
on
90 %
V
GS (on)
90 %
I
D
10 %
t
d (off)
t
t
r
f
t
off
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SK2462
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
R
DS(on)
(at V
Limited
= 10 V)
GS
ID(DC)
ID(pulse)
100 s
µ
1 ms
10
Power Dissipation Limited
10ms
200ms
DC
1
ID - Drain Current - A
TC = 25
˚C
Single Pulse
0.1
1
10 100 1000
VDS - Drain to Source Voltage - V
PW=10 s
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
PT - Total Power Dissipation - W
0
20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
40
VGS = 10 V
30
20
ID - Drain Current - A
10
0
2
VDS - Drain to Source Voltage - V
4
VGS = 6 V
VGS = 4 V
6
Pulsed
8
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
TA = –25 ˚C
25 ˚C
125 ˚C
ID - Drain Current - A
1
0
51015
GS - Gate to Source Volta
V
Pulsed
VDS=10 V
e - V
3
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