NEC 2SK2413 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2413 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
DS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
R
• Low Ciss Ciss = 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
2SK2413
PACKAGE DIMENSIONS
(in millimeter)
8.0 ±0.2
13.0 ±0.2
123
4.5 ±0.2
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) I
Drain Current (pulse)* ID(pulse) ±40 A
Total Power Dissipation (TA = 25 ˚C) PT 1.8 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** IAS 10 A
Single Avalanche Energy** E
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
D(DC) ±10 A
ch 150 ˚C
AS 10 mJ
2.5 ±0.2
1.4 ±0.2
MP-10 (ISOLATED TO-220)
Gate
Gate Protection
Diode
1.4 ±0.2
0.5 ±0.1 0.5 ±0.10.5 ±0.1
Drain
Source
1. Gate
2. Drain
3. Source
Body
Diode
Document No. TC-2494
(O. D. No. TC-8032)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2413
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS(on)1 50 70 VGS = 10 V, ID = 5.0 A
Drain to Source On-Resistance RDS(on)2 70 95 VGS = 4 V, ID = 5.0 A
Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 7.0 12 VDS = 10 V, ID = 5.0 A
Drain Leakage Current IDSS ±10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 860 VDS = 10 V
Output Capacitance Coss 440 VGS = 0
Reverse Transfer Capacitance Crss 110 f = 1 MHz
Turn-On Delay Time td(on) 15 ID = 5.0 A
Rise Time tr 90 VGS(on) = 10 V
Turn-Off Delay Time td(off) 75 VDD = 30 V
Fall Time tf 30 RG = 10 Ω
Total Gate Charge QG 24 ID = 20 A
Gate to Source Charge QGS 3.0 VDD = 48 V
Gate to Drain Charge QGD 6.0 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 IF = 10 A, VGS = 0
Reverse Recovery Time trr 95 IF = 10 A, VGS = 0
Reverse Recovery Charge Qrr 250 di/dt = 100 A/µs
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
R
R
G
= 10 Ω
D.U.T.
G
V
GS
= 20 → 0 V
PG
V
R
G
= 25 Ω
DD
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
Starting T
L
PG.
V
DD
V
GS
V
DS
0
t
µ
t = 1 s
ch
Duty Cycle ≤ 1 %
Test Circuit 3 Gate Charge
PG.
G
= 2 mA
I
50 Ω
D.U.T.
L
R
V
DD
V
GS
V
Wave
Form
I
D
Wave
Form
D
I
GS
10 %
0
10 %
90 %
V
GS (on)
90 %
0
t
d (on)
t
r
t
on
90 %
I
D
10 %
t
d (off)
t
f
t
off
L
R
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Radial Tape Specification Dimension (unit: mm)
2SK2413
P
∆
A1
A
H1
H0
l1
F1 F2
P0
H
d
TPP2
h
∆
W0 W2
W1
0
D
t
W
h
∆
Component Body Length along Tape A1 8.0 ± 0.2
Component Body Height A 13.0 ± 0.2
Component Body Width T 4.5 ± 0.2
Component Lead Width Dimension d 0.5 ± 0.1
Lead Wire Enclosure I1 2.5 MIN.
Component Center Pitch P 12.7 ± 1.0
Feedhole Pitch P0 12.7 ± 0.3
Feedhole Center to Center Lead P2 6.35 ± 0.5
Component Lead Pitch F1, F2 2.5
Deflection Front or Rear
Deflection Left or Right
Carrier Strip Width W 18.0
Adhesive Tape Width W0 5.0 MIN.
Feedhole Location W1 9.0 ± 0.5
Adhesive Tape Position W2 0.7 MIN.
Height of Seating Plane H0 16.0 ± 0.5
Feedhole to upper of Component H1 32.2 MAX.
Feedhole to Bottom of Component H 20.0 MAX.
Tape Feedhole Diameter D0 4.0 ± 0.2
Overall Taped Package Thickness t 0.7 ± 0.2
Item
∆
h ±1.0
∆
P ±1.3
+0.4
–0.1
+1.0
–0.5
3
Loading...