NEC 2SK2412 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2412 is N-Channel MOS Field Effect Transistor de-

signed for high speed switching applications.

2SK2412

PACKAGE DIMENSIONS

(in millimeters)

FEATURES

• Low On-Resistance

RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 10 A)

DS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 10 A)

R

• Low Ciss Ciss = 860 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

QUALITY GRADE

Standard

Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended

applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 60 V

Gate to Source Voltage VGSS ±20 V

Drain Current (DC) I

Drain Current (pulse)* ID(pulse) ±80 A

Total Power Dissipation (Tc = 25 ˚C) PT1 30 W

Total Power Dissipation (T

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I

Single Avalanche Energy** EAS 22.5 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting T

ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

A = 25 ˚C) PT2 2.0 W

D(DC) ±20 A

AS 20 A

10.0 ±0.3

15.0 ±0.3

0.7 ±0.1

123

MP-45F(ISOLATED TO-220)

Gate

Gate Protection
Diode

3.2 ±0.2

3 ±0.1

4 ±0.2

1.3 ±0.2

1.5 ±0.2

2.542.54

4.5 ±0.2

2.7 ±0.2

12.0 ±0.2

MIN.

13.5

2.5 ±0.1

0.65 ±0.1

1. Gate

2. Drain

3. Source

Drain

Body
Diode

Source

Document No. TC-2493
(O. D. No. TC-8031)
Date Published November 1994 P
Printed in Japan

The information in this document is subject to change without notice.

©

1994

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2412

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS(on)1 50 70 VGS = 10 V, ID = 10 A

Drain to Source On-Resistance RDS(on)2 67 95 VGS = 4 V, ID = 10 A

Gate to Source Cutoff Voltage VGS(off) 1.0 1.6 2.0 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 7.0 15 VDS = 10 V, ID = 10 A

Drain Leakage Current IDSS 10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0

Input Capacitance Ciss 860 VDS = 10 V

Output Capacitance Coss 440 VGS = 0

Reverse Transfer Capacitance Crss 110 f = 1 MHz

Turn-On Delay Time td(on) 15 ID = 10 A

Rise Time tr 120 VGS(on) = 10 V

Turn-Off Delay Time td(off) 70 VDD = 30 V
Fall Time tf 50 RG = 10 Ω

Total Gate Charge QG 27 ID = 20 A

Gate to Source Charge QGS 2.7 VDD = 48 V

Gate to Drain Charge QGD 8.9 VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.2 IF = 20 A, VGS = 0

Reverse Recovery Time trr 120 IF = 20 A, VGS = 0

Reverse Recovery Charge Qrr 350 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V

S

µ

A

µ

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

V

GS

= 20 → 0 V

PG

R

DD

V

G

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

Starting T

L

V

DD

PG.

V

GS

0

V

DS

t

µ

t = 1 s
Duty Cycle ≤ 1 %

ch

R

G

= 10 Ω

D.U.T.

R

G

Test Circuit 3 Gate Charge

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

L

R

V

DD

V

GS

Wave
Form

I

D

Wave
Form

V

I

GS

0

D

10 %

10 %

0

t

d (on)

90 %

t

on

90 %

V

GS (on)

90 %

I

D

10 %

t

d (off)

t

t

r

f

t

off

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

g

2SK2412

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

40 60 80 100 120 140 160

20

c - Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

100

Limited

GS

DS (on)

R

10

D - Drain Current - A

I

(at V

= 10 V)

ID (pulse)

ID (DC)

Power Dissipation Limited

DC

1 ms

10 ms

200 ms

PW = 10 s

100 s

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

50

40

30

20

10

PT - Total Power Dissipation - W

0

20 40 60 80 100 120 140 160

c - Case Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

80

Pulsed

V

µ

60

VGS = 10 V

GS = 6 V

40

GS = 4 V

V

ID - Drain Current - A

20

Tc = 25 ˚C
Single Pulse

1

0.1

FORWARD TRANSFER CHARACTERISTICS

1000

100

10

D - Drain Current - A

I

1

1 23 567

0

1 10 100

V

DS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

0

2

4681012

Pulsed

VDS = 10 V

TA = –25 ˚C

25 ˚C

125 ˚C

48

GS - Gate to Source Volta

V

e - V

3