NEC 2SK2410 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2410 is N-Channel MOS Field Effect Transistor de-

signed for high speed switching applications.

2SK2410

PACKAGE DIMENSIONS

(in millimeters)

FEATURES

• Low On-Resistance

RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)

DS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)

R

• Low Ciss Ciss = 1500 pF TYP.

• High Avalanche Capability Ratings

• Built-in G-S Gate Protection Diodes

QUALITY GRADE

Standard

Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended

applications.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 60 V

Gate to Source Voltage VGSS ±20 V

Drain Current (DC) I

Drain Current (pulse)* ID(pulse) ±120 A

Total Power Dissipation (Tc = 25 ˚C) PT1 35 W

Total Power Dissipation (T

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I

Single Avalanche Energy** EAS 90 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %

** Starting T

ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

A = 25 ˚C) PT2 2.0 W

D(DC) ±30 A

AS 30 A

15.0 ±0.3

0.7 ±0.1

10.0 ±0.3

3.2 ±0.2

3 ±0.1

4 ±0.2

1.3 ±0.2

1.5 ±0.2

2.542.54

123

MP-45F(ISOLATED TO-220)

Gate

Gate Protection
Diode

4.5 ±0.2

12.0 ±0.2

MIN.

13.5

0.65 ±0.1

1. Gate

2. Drain

3. Source

Drain

Body
Diode

Source

2.7 ±0.2

2.5 ±0.1

Document No. TC-2497
(O. D. No. TC-8029)
Date Published November 1994 P
Printed in Japan

The information in this document is subject to change without notice.

©

1994

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2410

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS(on)1 31 40 VGS = 10 V, ID = 15 A

Drain to Source On-Resistance RDS(on)2 40 60 VGS = 4 V, ID = 15 A

Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 15 27 VDS = 10 V, ID = 15 A

Drain Leakage Current IDSS 10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0

Input Capacitance Ciss 1500 VDS = 10 V

Output Capacitance Coss 720 VGS = 0

Reverse Transfer Capacitance Crss 190 f = 1 MHz

Turn-On Delay Time td(on) 22 ID = 15 A

Rise Time tr 260 VGS(on) = 10 V

Turn-Off Delay Time td(off) 130 VDD = 30 V
Fall Time tf 150 RG = 10 Ω

Total Gate Charge QG 50 ID = 30 A

Gate to Source Charge QGS 5.0 VDD = 48 V

Gate to Drain Charge QGD 15 VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.1 IF = 30 A, VGS = 0

Reverse Recovery Time trr 110 IF = 30 A, VGS = 0

Reverse Recovery Charge Qrr 320 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V

S

µ

A

µ

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

V

GS

= 20 → 0 V

PG

R

V

DD

G

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

Starting T

L

DD

V

PG.

V

GS

0

DS

t

µ

t = 1 s
Duty Cycle ≤ 1 %

ch

R

G

= 10 Ω

D.U.T.

R

G

Test Circuit 3 Gate Charge

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

L

R

V

DD

V

GS

Wave
Form

I

D

Wave
Form

V

I

GS

0

D

10 %

10 %

0

t

d (on)

90 %

t

on

90 %

V

GS (on)

90 %

I

D

10 %

t

d (off)

t

t

r

f

t

off

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2410

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160

50

40

30

20

10

PT - Total Power Disslipation - W

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

0

Tc - Case Temperature - ˚C Tc - Case Temperature - ˚C

DRAIN CURRENT vs.

FORWARD BIAS SAFE OPERATING AREA

1000 100

PW = 10 s

100

10

LImited

ID (DC)

= 10 V)

DS(on)

GS

R

Power Dissipation Limited

(at V

ID(pulse)

10 ms

200 ms

DC

10 s

1 ms

µ

µ

ID - Drain Current - A

c = 25 ˚C

T
Single Pulse

1

0.1 1 10 100 2 4 6 8 10 12

90

80

70

60

50

40

30

ID - Drain Current - A

20

10

0

DRAIN TO SOURCE VOLTAGE

GS = 10 V

V

VGS = 6 V

VGS = 4 V

Pulsed

FORWARD TRANSFER CHARACTERISTICS

1000

100

ID - Drain Current - A

10

0

VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V

Pulsed

V

DS = 10 V

TA = –25 ˚C

25 ˚C

125 ˚C

51015

VGS - Drain to Source Voltage - V

3