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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2410 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
2SK2410
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)
DS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
R
• Low Ciss Ciss = 1500 pF TYP.
• High Avalanche Capability Ratings
• Built-in G-S Gate Protection Diodes
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) I
Drain Current (pulse)* ID(pulse) ±120 A
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 90 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
A = 25 ˚C) PT2 2.0 W
D(DC) ±30 A
AS 30 A
15.0 ±0.3
0.7 ±0.1
10.0 ±0.3
3.2 ±0.2
3 ±0.1
4 ±0.2
1.3 ±0.2
1.5 ±0.2
2.542.54
123
MP-45F(ISOLATED TO-220)
Gate
Gate Protection
Diode
4.5 ±0.2
12.0 ±0.2
MIN.
13.5
0.65 ±0.1
1. Gate
2. Drain
3. Source
Drain
Body
Diode
Source
2.7 ±0.2
2.5 ±0.1
Document No. TC-2497
(O. D. No. TC-8029)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2410
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS(on)1 31 40 VGS = 10 V, ID = 15 A
Drain to Source On-Resistance RDS(on)2 40 60 VGS = 4 V, ID = 15 A
Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 15 27 VDS = 10 V, ID = 15 A
Drain Leakage Current IDSS 10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 1500 VDS = 10 V
Output Capacitance Coss 720 VGS = 0
Reverse Transfer Capacitance Crss 190 f = 1 MHz
Turn-On Delay Time td(on) 22 ID = 15 A
Rise Time tr 260 VGS(on) = 10 V
Turn-Off Delay Time td(off) 130 VDD = 30 V
Fall Time tf 150 RG = 10 Ω
Total Gate Charge QG 50 ID = 30 A
Gate to Source Charge QGS 5.0 VDD = 48 V
Gate to Drain Charge QGD 15 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.1 IF = 30 A, VGS = 0
Reverse Recovery Time trr 110 IF = 30 A, VGS = 0
Reverse Recovery Charge Qrr 320 di/dt = 100 A/µs
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
V
GS
= 20 → 0 V
PG
R
V
DD
G
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
V
Starting T
L
DD
V
PG.
V
GS
0
DS
t
µ
t = 1 s
Duty Cycle ≤ 1 %
ch
R
G
= 10 Ω
D.U.T.
R
G
Test Circuit 3 Gate Charge
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
L
R
V
DD
V
GS
Wave
Form
I
D
Wave
Form
V
I
GS
0
D
10 %
10 %
0
t
d (on)
90 %
t
on
90 %
V
GS (on)
90 %
I
D
10 %
t
d (off)
t
t
r
f
t
off
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2410
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160
50
40
30
20
10
PT - Total Power Disslipation - W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
Tc - Case Temperature - ˚C Tc - Case Temperature - ˚C
DRAIN CURRENT vs.
FORWARD BIAS SAFE OPERATING AREA
1000 100
PW = 10 s
100
10
LImited
ID (DC)
= 10 V)
DS(on)
GS
R
Power Dissipation Limited
(at V
ID(pulse)
10 ms
200 ms
DC
10 s
1 ms
µ
µ
ID - Drain Current - A
c = 25 ˚C
T
Single Pulse
1
0.1 1 10 100 2 4 6 8 10 12
90
80
70
60
50
40
30
ID - Drain Current - A
20
10
0
DRAIN TO SOURCE VOLTAGE
GS = 10 V
V
VGS = 6 V
VGS = 4 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
1000
100
ID - Drain Current - A
10
0
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V
Pulsed
V
DS = 10 V
TA = –25 ˚C
25 ˚C
125 ˚C
51015
VGS - Drain to Source Voltage - V
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