NEC 2SK2409 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK2409
DESCRIPTION
The 2SK2409 is N-Channel MOS Field Effect Transistor de-
signed for solenoid, motor, and lamp driver.
FEATURES
• Low On-Resistance
RDS(on) ≤ 27 mΩ (VGS = 10 V, ID = 20 A)
DS(on) ≤ 40 mΩ (VGS = 4 V, ID = 20 A)
R
• Low Ciss Ciss = 2040 pF TYP.
• Built-in Gate Protection Diode
QUALITY GRADE
Standard
Please refer to “Quality grade on NEC Semiconductor Device”
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±40 A
Drain Current (pulse) I
Total Power Dissipation (Ta = 25 ˚C) PT1 2.0 W
Total Power Dissipation (Tc = 25 ˚C) PT2 35 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current IAS** 40 A
Single Avalanche Energy E
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
D(pulse)* ±160 A
ch 150 ˚C
AS** 160 mJ
PACKAGE DIMENSION
(in millimeters)
10.0 ±0.3
15.0 ±0.3
0.7 ±0.1 1.3 ±0.2
2.54 2.54
123
MP-45F (ISOLATED TO-220)
Gate
Gate Protection
Diode
3.2 ±0.2
3 ±0.1
4 ±0.2
1.5 ±0.2
Drain
Source
4.5 ±0.2
12.0 ±0.2
13.5 MIN.
0.65 ±0.1
1.
Gate
2.
Drain
3.
Source
Body
Diode
2.7 ±0.2
2.5 ±0.1
Document No. TC-2489
(O. D. No. TC-8028)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
2SK2409
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-State Resistance RDS(on)1 22 27 VGS = 10 V, ID = 20 A
Drain to Source On-State Resistance RDS(on)2 30 40 VGS = 4 V, ID = 20 A
Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 20 35 VDS = 10 V, ID = 20 A
Drain Cutoff Current IDSS 10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 2040 VDS = 10 V
Output Capacitance Coss 1080 VGS = 0
Reverse Transfer Capacitance Crss 300 f = 1 MHz
Turn-On Delay Time td(on) 30 ID = 20 A
Rise Time tr 350 VGS(on) = 10 V
Turn-Off Delay Time td(off) 210 VDD = 30 V
Fall Time tf 260 R
Total Gate Charge QG 72 ID = 40 A
Gate to Source Charge QGS 6.0 VDD = 48 V
Gate to Drain Charge QGD 24 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.1 IF = 40 A, VGS = 0
Reverse Recovery Time trr 110 IF = 40 A, VGS = 0
Reverse Recovery Charge Qrr 360 di/dt = 100 A/µs
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
= 10 Ω
G
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
V
GS
= 20 0 V→
PG
R
G
= 25 Ω
V
DD
50 Ω
I
D
DUT
I
AS
BV
DSS
V
Starting T
L
V
DD
PG.
V
GS
0
DS
ch
t
t = 1 s
µ
Duty Cycle ≤ 1%
R
G
= 10 Ω
DUT
R
G
Test Circuit 3 Gate Charge
DUT
G = 2 mA
PG.
I
50 Ω
RL
VDD
V
V
GS
Wave
Form
D
I
Wave
Form
GS
0
I
D
0
10 %
10 %
t
d (on)tr
t
on
90 %
V
GS(on)
I
D
t
d (off)tf
t
off
90 %
90 %
10 %
R
L
V
DD
2
TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
2SK2409
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
PW = 10 s
100
10
ID - Drain Current - A
Limited
DS(on)
R
(at V
= 10 V)
GS
ID(DC)
Power Dissipation Limited
ID(pulse)
200 ms
DC
1 ms
10 ms
100 s
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
100
µ
80
60
40
ID - Drain Current - A
VGS = 6 V
VGS = 4 V
TC = 25 ˚C
Single Pulse
1
0.1 100
110
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
ID - Drain Current - A
1
0
Ta = –25 ˚C
25 ˚C
125 ˚C
510
VGS - Gate to Source Voltage - V
20
0481216
VDS - Drain to Source Voltage - V
Pulsed
VDS=10 V
3
Loading...