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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)
• Low C
iss Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) I
Drain Current (pulse)* ID(pulse) ±100 A
Total Power Dissipation (TC = 25 °C) PT1 160 W
Total Power Dissipation (T
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 ~ +150 °C
Single Avalanche Current** I
Single Avalanche Energy** EAS 446 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
(2SK2371/2SK2372)
a = 25 °C) PT2 3.0 W
VDSS 450/500 V
D(DC) ±25 A
AS 25 A
PACKAGE DIMENSIONS
(in millimeters)
MP-88
4
3
1.0 ± 0.2
Source
3.2 ± 0.2
4.5 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Body
Diode
15.7 MAX.
6.0 1.0
20.0 ± 0.2
12
19 MIN.
3.0 ± 0.2
2.2 ± 0.2
5.45 5.45
Gate
4.7 MAX.
1.5
7.0
2.8 ± 0.10.6 ± 0.1
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
©
1995
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2SK2371/2SK2372
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Drain to Source On-Resistance RDS(on) 0.2 0.25 Ω VGS = 10 V 2SK2371
0.22 0.27 ID = 13 A 2SK2372
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance yfs 8.0 S VDS = 10 V, ID = 13 A
Drain Leakage Current IDSS 100
Gate to Source Leakage Current IGSS ±100 nA VGS = ± 30 V, VDS = 0
Input Capacitance Ciss 3600 pF VDS = 10 V
Output Capacitance Coss 700 pF VGS = 0
Reverse Transfer Capacitance Crss 50 pF f = 1 MHz
Turn-On Delay Time td(on) 40 ns ID = 13 A
Rise Time tr 70 ns VGS = 10 V
Turn-Off Delay Time td(off) 160 ns VDD = 150 V
Fall Time tf 60 ns RG = 10 Ω RL = 11.5 Ω
Total Gate Charge QG 95 nC ID = 25 A
Gate to Source Charge QGS 20 nC VDD = 400 V
Gate to Drain Charge QGD 40 nC VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 V IF = 25 A, VGS = 0
Reverse Recovery Time trr 500 ns IF = 25 A, VGS = 0
Reverse Recovery Charge Qrr 4.5
µ
A VDS = VDSS, VGS = 0
µ
C di/dt = 50 A/µS
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
PG.
VGS = 20-0 V
R
G = 25 Ω
VDD
50 Ω
ID
D.U.T.
IAS
BVDSS
L
V
DD
VDS
Starting Tch
PG.
VGS
0
t
US
t = 1
Duty Cycle ≤ 1%
RG
G = 10 Ω
R
D.U.T.
R
VDD
L
Test Circuit 3 Gate Charge
D.U.T.
I
PG.
G = 2 mA
50 Ω
RL
VDD
VGS
Wave
Form
I
D
Wave
Form
GS
V
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
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TYPICAL CHARACTERISTICS (TA = 25 °C)
2SK2371/2SK2372
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 140 160
6040 80 100 120
T
C - Case Temperature - (°C)
FORWARD BIAS SAFE OPERATING AREA
1 000
Limited
DS (on)
100
ID (DC)
10
R
= 10 V)
GS
( V
ID (DC)
Power Dissipation Limitd
TA = 25 °C
Single Pulse
ID (pulse)
100 s
1 ms
10 ms
PW = 10 s
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
210
180
150
120
90
60
30
PT - Total Power Dissipation - (W)
0
20 140 160
6040 80 100 120
C - Case Temperature - (°C)
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
VGS = 10 V
8 V
15
µ
Pulsed
6 V
10
1.0
ID - Drain Current - (A)
0.1
1
V
DS - Drain to Source Voltage - (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
10
1
ID - Drain Current - (A)
0.1
0
V
GS - Gate to Source Voltage - (V)
2SK2371
2SK2372
10 100 1 000
Tch = 125 °C
75 °C
25 °C
–25 °C
VDS = 10 V
Pulsed
51015
5
ID - Drain Current - (A)
0
V
DS - Drain to Source Voltage - (V)
5 V
51510
3