NEC 2SK2372, 2SK2371 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTORS

2SK2371/2SK2372

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor

designed for high voltage switching applications.

FEATURES

• Low On-Resistance

2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)

• Low C

iss Ciss = 3600 pF TYP.

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate to Source Voltage VGSS ±30 V

Drain Current (DC) I

Drain Current (pulse)* ID(pulse) ±100 A
Total Power Dissipation (TC = 25 °C) PT1 160 W

Total Power Dissipation (T

Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 ~ +150 °C

Single Avalanche Current** I

Single Avalanche Energy** EAS 446 mJ

* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0

The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device is actually used,

an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

(2SK2371/2SK2372)

a = 25 °C) PT2 3.0 W

VDSS 450/500 V

D(DC) ±25 A

AS 25 A

PACKAGE DIMENSIONS

(in millimeters)

MP-88

4

3

1.0 ± 0.2

Source

3.2 ± 0.2

4.5 ± 0.2

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Drain

Body
Diode

15.7 MAX.

6.0 1.0

20.0 ± 0.2
12

19 MIN.

3.0 ± 0.2

2.2 ± 0.2

5.45 5.45

Gate

4.7 MAX.

1.5

7.0

2.8 ± 0.10.6 ± 0.1

Document No. TC-2505

(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan

©

1995

2SK2371/2SK2372

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

Drain to Source On-Resistance RDS(on) 0.2 0.25 Ω VGS = 10 V 2SK2371

0.22 0.27 ID = 13 A 2SK2372

Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance yfs  8.0 S VDS = 10 V, ID = 13 A

Drain Leakage Current IDSS 100
Gate to Source Leakage Current IGSS ±100 nA VGS = ± 30 V, VDS = 0

Input Capacitance Ciss 3600 pF VDS = 10 V

Output Capacitance Coss 700 pF VGS = 0

Reverse Transfer Capacitance Crss 50 pF f = 1 MHz

Turn-On Delay Time td(on) 40 ns ID = 13 A

Rise Time tr 70 ns VGS = 10 V

Turn-Off Delay Time td(off) 160 ns VDD = 150 V
Fall Time tf 60 ns RG = 10 Ω RL = 11.5 Ω

Total Gate Charge QG 95 nC ID = 25 A

Gate to Source Charge QGS 20 nC VDD = 400 V

Gate to Drain Charge QGD 40 nC VGS = 10 V

Body Diode Forward Voltage VF(S-D) 1.0 V IF = 25 A, VGS = 0

Reverse Recovery Time trr 500 ns IF = 25 A, VGS = 0

Reverse Recovery Charge Qrr 4.5

µ

A VDS = VDSS, VGS = 0

µ

C di/dt = 50 A/µS

Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time

PG.

VGS = 20-0 V

R

G = 25 Ω

VDD

50 Ω

ID

D.U.T.

IAS

BVDSS

L

V

DD

VDS

Starting Tch

PG.

VGS
0

t

US

t = 1
Duty Cycle ≤ 1%

RG

G = 10 Ω

R

D.U.T.

R

VDD

L

Test Circuit 3 Gate Charge

D.U.T.

I

PG.

G = 2 mA

50 Ω

RL

VDD

VGS
Wave
Form

I

D

Wave
Form

GS

V

10 %

0

ID

90 %

10 %

0

td (on) tr td (off) tf

ton toff

90 %

GS (on)

V

90 %

ID

10 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK2371/2SK2372

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 140 160

6040 80 100 120

T

C - Case Temperature - (°C)

FORWARD BIAS SAFE OPERATING AREA

1 000

Limited

DS (on)

100

ID (DC)

10

R

= 10 V)

GS

( V

ID (DC)

Power Dissipation Limitd

TA = 25 °C
Single Pulse

ID (pulse)

100 s

1 ms

10 ms

PW = 10 s

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

210

180

150

120

90

60

30

PT - Total Power Dissipation - (W)

0

20 140 160

6040 80 100 120

C - Case Temperature - (°C)

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

20

VGS = 10 V

8 V

15

µ

Pulsed

6 V

10

1.0

ID - Drain Current - (A)

0.1
1

V

DS - Drain to Source Voltage - (V)

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

100

10

1

ID - Drain Current - (A)

0.1

0

V

GS - Gate to Source Voltage - (V)

2SK2371
2SK2372

10 100 1 000

Tch = 125 °C

75 °C
25 °C

–25 °C

VDS = 10 V
Pulsed

51015

5

ID - Drain Current - (A)

0

V

DS - Drain to Source Voltage - (V)

5 V

51510

3