NEC 2SK2370, 2SK2369 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2369/2SK2370
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 10 A)
2SK2370: R
DS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A)
• Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SAK2369/2370) VDSS 450/500 V
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±20 A
Drain Current (pulse)* ID(pulse) ±80 A
Total Power Dissipation (Tc = 25 ˚C) PT1 140 W
Total Power Dissipation (T
A = 25 ˚C) PT2 3.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 285 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
GSS ±30 V
AS 20 A
PACKAGE DIMENSIONS
15.7 MAX
6.0 1.0
20.0 ± 0.2
19 MIN.
2.2 ± 0.2
12
3.0 ± 0.2
5.45 5.45
(in millimeters)
3.0 ± 0.2
φ
4
4.5 ± 0.2
3
1.0 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
4.7 MAX.
1.5
7.0
2.8 ± 0.10.6 ± 0.1
Document No. TC-2507
(O. D. No. TC-8066)
Date Published January 1995 P
Printed in Japan
Gate
Source
Body
Diode
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2369/2SK2370
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-State Resistance RDS(on) 0.30 0.35 VGS = 10 V 2SK2369
UNIT
Ω
0.32 0.40 ID = 10 V 2SK2370
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 7.5 VDS = 10 V, ID = 10 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 2400 VDS = 10 V
Output Capacitance Coss 500 VGS = 0
Reverse Transfer Capacitance Crss 45 f = 1 MHz
Turn-On Delay Time td(on) 35 ID = 10 A
Rise Time tr 60 VGS = 10 V
Turn-Off Delay Time td(off) 105 VDD = 150 V
Fall Time tf 65 R
Total Gate Charge QG 65 ID = 20 A
Gate to Source Charge QGS 15 VDD = 400 V
Gate to Drain Charge QGD 30 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 IF = 20 A, VGS = 0
Reverse Recovery Time trr 500 IF = 20 A, VGS = 0
Reverse Recovery Charge Qrr 3.5 di/dt = 50 A/µs
V
S
µ
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
A
= 10 Ω RL = 15 Ω
G
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDS
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
I
PG.
G = 2 mA
50 Ω
RL
VDD
Test Circuit 2 Switching Time
L
DD
V
PG.
RG
G = 10 Ω
R
R
VDD
L
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
D.U.T.
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SK2369/2SK2370
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - (%)
0
20 140 160
6040 80 100 120
T
C - Case Temperature - (˚C)
FORWARD BIAS SAFE OPERATING AREA
100
10
DS (on)
R
at (V
Limited
= 10 V)
GS
ID (pulse)
ID (DC)
Power Dissipation Limited
10 ms
PW = 10 s
100 s
µ
1 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
PT - Total Power Dissipation - (W)
0
20 140 160
6040 80 100 120
T
C - Case Temperature - (˚C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
µ
20
15
VGS = 10 V
8 V
6 V
1.0
ID - Drain Current - (A)
TC = 25 ˚C
Single Pulse
0.1
DS - Drain to Source Voltage - (V)
V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
10
1.0
ID - Drain Current - (A)
0.1
0
GS - Gate to Source Volta
V
10 100 1 000
Tch = 125 ˚C
75 ˚C
25 ˚C
25 ˚C
VDS = 10 V
Pulsed
51015
e - (V)
10
ID - Drain Current - (A)
5
01
52010 15
V
DS - Drain to Source Voltage - (V)
5 V
3
Loading...