NEC 2SK2368, 2SK2367 Datasheet
Body
Diode
Source
Drain
Gate
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2367/2SK2368
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)
2SK2368: R
• Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings
DS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A)
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX.
1.06.0
123
3.2±0.2
4
4.5±0.2
4.7 MAX.
1.5
7.0
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2367/2SK2368)
Gate to Source Voltage V
Drain Current (DC) ID (DC) ±15 A
Drain Current (pulse)* ID (pulse) ±60 A
Total Power Dissipation (T
Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
Single Avalanche Current** IAS 15 A
Single Avalanche Energy** EAS 161 mJ
µ
* PW ≤ 10
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
s, Duty Cycle ≤ 1 %
c = 25 ˚C) PT1 120 W
VDSS 450/500 V
GSS ±30 V
stg –55 to +150 ˚C
19 MIN. 20.0±0.2
3.0±0.2
5.45 5.45
1.0±0.2
MP-88
2.8±0.10.6±0.12.2±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Document No. TC-2506
(O. D. No. TC-8065)
Date Published December 1994 P
Printed in Japan
1995
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2367/2SK2368
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 0.4 0.5 VGS = 10 V 2SK2367
UNIT
Ω
0.5 0.6 ID = 8.0 A 2SK2368
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 5.0 VDS = 10 V, ID = 8.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1 600 VDS = 10 V
Output Capacitance Coss 300 VGS = 0
Reverse Transfer Capacitance Crss 30 f = 1 MHz
Turn-On Delay Time td (on) 30 ID = 8.0 A
Rise Time tr 40 VGS = 10 V
Turn-Off Delay Time td (off) 70 VDD = 150 V
Fall Time tf 25
Total Gate Charge QG 43 ID = 15 A
Gate to Source Charge QGS 10 VDD = 400 V
Gate to Drain Charge QGD 20 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 15 A, VGS = 0
Reverse Recovery Time trr 400 IF = 15 A, VGS = 0
Reverse Recovery Charge Qrr 1.8 di/dt = 50 A/µs
V
S
µ
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
A
R
= 10 Ω RL = 18.8 Ω
G
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G
= 25 Ω
PG.
VGS = 20 - 0 V
50 Ω
BV
DSS
I
AS
I
D
V
DD
Starting T
Test Circuit 3 Gate Charge
D.U.T.
I
G
PG.
= 2 mA
50 Ω
R
V
Test Circuit 2 Switching Time
L
R
DD
V
PG.
V
GS
G
= 10 Ω
R
G
L
R
V
DD
0
D.U.T.
V
DS
t
t = 1 us
Duty Cycle ≤ 1 %
ch
L
DD
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
0
I
D
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20 140 160
100
T
C
- Case Temperature - ˚C
dT - Percentage of Rated Power - %
FORWARD BIAS SAFE OPERATING AREA
10 100 1 000
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
80
0
40
1.0
10
0.1
60
20
6040 80 100 120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20 140 160
100
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
80
0
40
60
20
6040 80 100 120
120
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
51015
100
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
10
0.1
1
TC = 25 ˚C
Single Pulse
100 s
1 ms
10 ms
Power Dissipation Limited
R
DS (on)
Limited
(at V
GS
= 10 V)
0
Pulsed
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
I
D (pulse)
PW = 10 s
I
D (DC)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
416812
24
16
12
8
4
0
Pulsed
VGS = 20 V
10 V
8 V
6 V
20
2SK2368
2SK2367
µ
µ
2SK2367/2SK2368
3
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