NEC 2SK2364 Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2363/2SK2364

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor

designed for high voltage switching applications.

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Low On-Resistance

2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A)

2SK2364: R

DS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A)

• Low Ciss Ciss = 1600 pF TYP.

• High Avalanche Capability Ratings

• Isolate TO-220 Package

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage (2SK2363/2SK2364)

Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±8.0 A
Drain Current (pulse)* ID(pulse) ± 32 A

Total Power Dissipation (T

Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W

Channel Temperature Tch 150 ˚C

Storage Temperature T

Single Avalanche Current** IAS 8.0 A

Single Avalanche Energy** EAS 320 mJ

µ

* PW ≤ 10
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0

s, Duty Cycle ≤ 1 %

c = 25 ˚C) PT1 35 W

VDSS 450/500 V

stg –55 to +150 ˚C

10.0±0.3 4.5±0.2

15.0±0.3

0.7±0.1

2.54

123

MP-45F (ISOLATED TO-220)

3.2±0.2

3±0.14±0.2

1.5±0.2

2.54

Drain

2.7±0.2

12.0±0.213.5MIN.

2.5±0.11.3±0.2

0.65±0.1

1. Gate

2. Drain

3. Source

Document No. TC-2504A
(O. D. No. TC-8063A)
Date Published May 1995 P
Printed in Japan

Gate

Source

Body
Diode

©

1994

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2363/2SK2364

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS (on) 0.4 0.5 VGS = 10 V 2SK2363

0.5 0.6 ID = 4.0 A 2SK2364

Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 4.0 VDS = 10 V, ID = 4.0 A

Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0

Input Capacitance Ciss 1600 VDS = 10 V

Output Capacitance Coss 310 VGS = 0

Reverse Transfer Capacitance Crss 30 f = 1 MHz

Turn-On Delay Time td (on) 20 ID = 4.0 A

Rise Time tr 13 VGS = 10 V

Turn-Off Delay Time td (off) 83 VDD = 150 V
Fall Time tf 16 RG = 10 Ω RL = 37.5 Ω

Total Gate Charge QG 42 ID = 8 A

Gate to Source Charge QGS 10 VDD = 400 V

Gate to Drain Charge QGD 20 VGS = 10 V

Body Diode Forward Voltage VF (S-D) 1.0 IF = 8 A, VGS = 0

Reverse Recovery Time trr 350 IF = 8 A, VGS = 0

Reverse Recovery Charge Qrr 1.5 di/dt = 50 A/µs

UNIT

Ω
Ω

V

S

µ

A

nA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

µ

C

Test Circuit 1 Avalanche Capability

D.U.T.

R

G = 25 Ω

PG

VGS = 20 - 0 V

50 Ω

BVDSS

IAS

ID

VDD

Starting Tch

Test Circuit 3 Gate Charge

D.U.T.

G = 2 mA

PG.

I

50 Ω

RL

VDD

VDS

Test Circuit 2 Switching Time

L

V

DD

PG.

RG

G = 10 Ω

R

R

VDD

L

VGS
0

t

t = 1us
Duty Cycle ≤ 1 %

D.U.T.

VGS

Wave Form

ID

Wave Form

VGS

10 %

0

ID

90 %

10 %

0

td (on) tr td (off) tf

ton toff

90 %

GS (on)

V

90 %

ID

10 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2363/2SK2364

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 140 160

6040 80 100 120

T

C - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100

ID (pulse)

Limited

= 10 V)

DS (on)

GS

R

10

(at V

ID (DC)

Power Dissipation Limited

10 ms

100 ms

1.0

ID - Drain Current - A

TC = 25 ˚C
Single Pulse

0.1
1

10 100 1 000

DS - Drain to Source Voltage - V

V

1 ms

PW = 10 s

100 s

µ

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

50

40

30

20

10

PT - Total Power Dissipation - W

0

20 140 160

6040 80 100 120

TC - Case Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

24

µ

20

16

VGS = 20 V

10 V

8 V
6 V

Pulsed

12

8

ID - Drain Current - A

4

0

416812

V

DS - Drain to Source Voltage - V

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

100

10

1

ID - Drain Current - A

0.1

0

GS - Gate to Source Voltage - V

V

Pulsed

TA = 125 ˚C

75 ˚C
25 ˚C

–25 ˚C

51015

3

2SK2363/2SK2364

1 000

100

10

1

0.1

0.01

(t) - Transient Thermal Resistance - C/W

th (ch-c)

0.001

r

10u 100 u 1 m 10 m 100 m 1 10 100 1 000

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

TA = –25 ˚C

10

25 ˚C
75 ˚C

125 ˚C

1.0

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

R

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

VDS = 10 V

1.5

Pulsed

1.0

0.5

th (ch-a)

= 62.5 ˚C/W

th (ch-c)

= 3.75 ˚C/W

Tc = 25 ˚C
Single Pulse

Pulsed

ID = 10 A

5 A

2.5 A

| yfs | - Forward Transfer Admittance - S

0.1

1.0 10 100

D

- Drain Current - A

I

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

2.0

1.0
VGS = 10 V

- Drain to Source on-State Resistance - Ω

0

DS (on)

R

1.0 10 100

D

- Drain Current - A

I

Pulsed

- Drain to Source On-State Resistance - W

DS (on)

R

0

10 20 30

GS

- Gate to Source Voltage - V

V

GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE

4.0

3.0

2.0

1.0

- Gate to Source Cutoff Voltage - V

GS (off)

V

0
–50 0 50 100 150

ch

- Channel Temperature - C

T

4

2SK2363/2SK2364

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

1.5

1.0
ID = 10 A

5 A

0.5

- Drain to Source On-State Resistance - Ω

0

DS (on)

R

–50 0 50 100 150

Tch - Channel Temperature - C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10 000

C

iss

1 000

C

oss

- Capacitance - pF

rss

, C

100

oss

, C

iss

C

10

1

V

DS

- Drain to Source Voltage - V

C

rss

10 100 1 000

VGS = 10 V

VGS = 0
f = 1 MHz

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

VGS = 10 V

1.0

- Diode Forward Current - A

SD

0.1

I

V

SD

- Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1 000

100

- Switching Time - ns

f

, t

10

d (of)

, t

r

, t

d (on)

t

1.0

0.1

1.0 10 100

D

- Drain Current - A

I

VGS = 0

1.00.50

Pulsed

t

r

t

f

t

d (off)

t

d (on)

VDS = 150 V
V

GS

= 10 V

R

G

= 10 Ω

1.5

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1 000

- Reverse Recovery Time - ns

100

rr

t

0.1

1.0 10 100

I

D

- Drain Current - A

di/dt = 50 A/us
V

GS

= 0

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

400

ID = 10 A

VDD = 400 V

300

250 V
125 V

V

GS

200

100

- Drain to Source Voltage - V

DS

V

V

DS

0 10203040

Q

g

- Gate Charge - nC

16

14

12

10

8

6

4

- Gate to Source Voltage - V

GS

V

2

5

2SK2363/2SK2364

SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE

400

ID (peak) = IAS
RG = 25 Ω
V

GS = 20 V → 0 V

V

DD = 150 V

300

320 mJ

200

100

EAS - Single Avalanche Energy - mJ

0

25 50 75 125 150100

Starting Tch-Starting Channel Temperature - ˚C

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

IAS = 8 A

10

1.0

IAS - Single Avalanche current - A

100

µ

1.0 m 10 m 100 m

L - Inductive load - H

RG = 25 Ω

DD = 150 V

V

GS = 20 V → 0

V

ch = 25 ˚C

Starting T

E

AS

= 320 mJ

6

2SK2363/2SK2364

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device is actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

7

2SK2363/2SK2364

[MEMO]

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document.
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property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

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audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

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support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11