NEC 2SK2364 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2363/2SK2364
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
2SK2363: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 4.0 A)
2SK2364: R
DS (on) = 0.6 Ω (VGS = 10 V, ID = 4.0 A)
• Low Ciss Ciss = 1600 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2363/2SK2364)
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±8.0 A
Drain Current (pulse)* ID(pulse) ± 32 A
Total Power Dissipation (T
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
Single Avalanche Current** IAS 8.0 A
Single Avalanche Energy** EAS 320 mJ
µ
* PW ≤ 10
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
s, Duty Cycle ≤ 1 %
c = 25 ˚C) PT1 35 W
VDSS 450/500 V
stg –55 to +150 ˚C
10.0±0.3 4.5±0.2
15.0±0.3
0.7±0.1
2.54
123
MP-45F (ISOLATED TO-220)
3.2±0.2
3±0.14±0.2
1.5±0.2
2.54
Drain
2.7±0.2
12.0±0.213.5MIN.
2.5±0.11.3±0.2
0.65±0.1
1. Gate
2. Drain
3. Source
Document No. TC-2504A
(O. D. No. TC-8063A)
Date Published May 1995 P
Printed in Japan
Gate
Source
Body
Diode
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2363/2SK2364
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 0.4 0.5 VGS = 10 V 2SK2363
0.5 0.6 ID = 4.0 A 2SK2364
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 4.0 VDS = 10 V, ID = 4.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1600 VDS = 10 V
Output Capacitance Coss 310 VGS = 0
Reverse Transfer Capacitance Crss 30 f = 1 MHz
Turn-On Delay Time td (on) 20 ID = 4.0 A
Rise Time tr 13 VGS = 10 V
Turn-Off Delay Time td (off) 83 VDD = 150 V
Fall Time tf 16 RG = 10 Ω RL = 37.5 Ω
Total Gate Charge QG 42 ID = 8 A
Gate to Source Charge QGS 10 VDD = 400 V
Gate to Drain Charge QGD 20 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 8 A, VGS = 0
Reverse Recovery Time trr 350 IF = 8 A, VGS = 0
Reverse Recovery Charge Qrr 1.5 di/dt = 50 A/µs
UNIT
Ω
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
G = 2 mA
PG.
I
50 Ω
RL
VDD
VDS
Test Circuit 2 Switching Time
L
V
DD
PG.
RG
G = 10 Ω
R
R
VDD
L
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
D.U.T.
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2363/2SK2364
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 140 160
6040 80 100 120
T
C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID (pulse)
Limited
= 10 V)
DS (on)
GS
R
10
(at V
ID (DC)
Power Dissipation Limited
10 ms
100 ms
1.0
ID - Drain Current - A
TC = 25 ˚C
Single Pulse
0.1
1
10 100 1 000
DS - Drain to Source Voltage - V
V
1 ms
PW = 10 s
100 s
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
PT - Total Power Dissipation - W
0
20 140 160
6040 80 100 120
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
24
µ
20
16
VGS = 20 V
10 V
8 V
6 V
Pulsed
12
8
ID - Drain Current - A
4
0
416812
V
DS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
10
1
ID - Drain Current - A
0.1
0
GS - Gate to Source Voltage - V
V
Pulsed
TA = 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
51015
3
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