NEC 2SK2362, 2SK2361 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2361/2SK2362
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A)
2SK2362: R
DS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2361/2SK2362)
Gate to Source Voltage V
Drain Current (DC) ID (DC) ±10 A
Drain Current (pulse)* ID (pulse) ±40 A
Total Power Dissipation (Tc = 25 ˚C) PT1 100 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 142 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
A = 25 ˚C) PT2 3.0 W
VDSS 450/500 V
GSS ±30 V
AS 10 A
15.7 MAX.
1.06.0
123
19 MIN. 20.0±0.2
3.0±0.2
5.45 5.45
Gate
4
1.0±0.2
MP-88
Drain
3.2±0.2
4.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Body
Diode
4.7 MAX.
1.5
7.0
2.8±0.10.6±0.12.2±0.2
Document No. TC-2502
(O. D. No. TC-8061)
Date Published December 1994 P
Printed in Japan
Source
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2361/2SK2362
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 0.7 0.9 VGS = 10 V 2SK2361
0.8 1.0 ID = 5.0 A 2SK2362
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 3.0 VDS = 10 V, ID = 5.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1050 VDS = 10 V
Output Capacitance Coss 200 VGS = 0
Reverse Transfer Capacitance Crss 26 f = 1 MHz
Turn-On Delay Time td (on) 15 ID = 5.0 A
Rise Time tr 24 VGS = 10 V
Turn-Off Delay Time td (off) 50 VDD = 150 V
Fall Time tf 14 R
Total Gate Charge QG 26 ID = 10 A
Gate to Source Charge QGS 6.1 VDD = 400 V
Gate to Drain Charge QGD 12 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 10 A, VGS = 0
Reverse Recovery Time trr 350 IF = 10 A, VGS = 0
Reverse Recovery Charge Qrr 2.0 di/dt = 50 A/µs
UNIT
Ω
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
= 10 Ω RL = 30 Ω
G
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDS
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
G = 2 mA
I
PG.
50
Ω
L
V
RL
VDD
Test Circuit 2 Switching Time
D.U.T.
L
R
DD
PG.
RG
G = 10 Ω
R
VDD
VGS
0
t
t = 1 us
Duty Cycle ≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2361/2SK2362
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 140 160
6040 80 100 120
C - Case Temperature - ˚C
T
FORWARD BIAS SAFE OPERATING AREA
100
ID (pulse)
Limited
= 10 V)
DS (on)
GS
10
R
(at V
ID (DC)
Power Dissipation Limited
1.0
ID - Drain Current - A
TC = 25 ˚C
Single Pulse
0.1
1
10 100 1 000
DS - Drain to Source Voltage - V
V
1 ms
10 ms
PW = 10 s
100 s
µ
µ
2SK2362
2SK2361
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
PT - Total Power Dissipation - W
0
20 140 160
6040 80 100 120
C - Case Temperature - ˚C
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
16
VGS = 20 V
12
10 V
8 V
6 V
8
ID - Drain Current - A
4
0
416812
V
DS - Drain to Source Voltage - V
Pulsed
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
10
1
ID - Drain Current - A
0.1
0
GS - Gate to Source Voltage - V
V
Pulsed
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
51015
3
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