NEC 2SK2358, 2SK2357 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2357/2SK2358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A)
2SK2358: R
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
DS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A)
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
15.0 ±0.3
3.2 ±0.2
3 ±0.1
12.0 ±0.213.5 MIN.
4.5 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2357/2358) VDSS 450/500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID(DC) ±6.0 A
Drain Current (pulse)* I
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (Ta = 25 ˚C) PT2 2.0 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current** IAS 6.0 A
Single Avalanche Energy** E
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
D(pulse) ±24 A
ch 150 °C
AS 17 mJ
4 ±0.2
0.7 ±0.1
123
1.3 ±0.2
1.5 ±0.2
2.542.54
MP-45F (ISOLATED TO-220)
Drain
Gate
Source
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
Body
Diode
The information in this document is subject to change without notice.
Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
2SK2357/2SK2358
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS(on) 0.7 0.9 VGS = 10 V 2SK2357
UNIT
Ω
0.8 1.0 ID = 3.0 A 2SK2358
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 3.0 VDS = 10 V, ID = 3.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1050 VDS = 10 V
Output Capacitance Coss 200 VGS = 0
Reverse Transfer Capacitance Crss 26 f = 1 MHz
Turn-On Delay Time td(on) 14 ID = 3.0 A
Rise Time tr 9VGS(on) = 10 V
Turn-Off Delay Time td(off) 56 VDD = 150 V
Fall Time tf 14
Total Gate Charge QG 27 ID = 6.0 A
Gate to Source Charge QGS 5.5 VDD = 400 V
Gate to Drain Charge QGD 12 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 IF = 6.0 A, VGS = 0
Reverse Recovery Time trr 300 IF = 6.0 A, VGS = 0
Reverse Recovery Charge Qrr 1.5
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
RG = 10 Ω RL = 50 Ω
ns
nC
nC
nC
V
ns
di/dt = 50 A/µs
nC
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
V
GS
= 20 - 0 V
PG
R
V
G
= 25 Ω
DD
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
Starting T
L
V
DD
PG.
GS
V
0
V
DS
ch
t
t = 1 s
µ
Duty Cycle ≤ 1 %
D.U.T.
R
G
RG = 10 Ω
Test Circuit 3 Gate Charge
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
R
L
V
DD
GS
V
Wave
Form
I
D
Wave
Form
V
I
0
D
GS
10 %
10 %
0
t
d (on)
90 %
t
on
90 %
V
GS (on)
90 %
I
D
10 %
t
d (off)
t
t
r
f
t
off
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
2SK2357/2SK2358
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
020
40 60 100 120 140 160
T
c
- Case Temperature - °C
80
FORWARD BIAS SAFE OPERATING AREA
100
Limited
= 10 V)
DS (on)
GS
R
10
1.0
- Drain Current - A
D
I
0.1
(at V
I
D (DC)
Tc = 25 °C
Single Pulse
0.1
Power Dissipation Limited
100 ms
10 100 1000
DS
- Drain to Source Voltage - V
V
I
D (pulse)
10 ms
100 s
1 ms
PW = 10 s
µ
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
- Total Power Dissipation - W
T
P
0
20 40 60 80 100 120 140 160
T
c
- Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
VGS = 20 V
10 V
8
8 V
6 V
6
4
- Drain Current - A
D
I
2
0
4 8 12 16
DS
- Drain to Source Voltage - V
V
Pulsed
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
10
1
- Drain Current - A
D
I
0.1
0.05
0
V
Ta = –25 °C
25 °C
75 °C
125 °C
51015
GS
- Gate to Source Voltage - V
3
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