NEC 2SK2341 Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK2341
DESCRIPTION
The 2SK2341 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-state Resistance
•
RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A)
LOW Ciss Ciss = 1090 pF TYP.
•
High Avalanche Capability Ratings
•
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS 250 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID (DC) ±11 A
Drain Current (pulse) I
Total Power Dissipation (TC = 25 °C) PT1 35 W
Total Power Dissipation (Ta = 25 °C) P T2 2.0 W
Storage Temperature T
Channel Temperature Tch 150 °C
Single Avalanche Current IAS** 11 A
Single Avalanche Energy E
*PW ≤ 10 µs, Duty Cycle ≤ 1 %
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
D (pulse)* ±44 A
stg –55 to +150 °C
AS** 320 mJ
15.0 ± 0.3
0.7 ± 0.1
2.54 TYP.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ± 0.3
123
123
MP-45F(SIOLATED TO-220)
φ3.2 ± 0.2
3 ± 0.1
12.0 ± 0.2
4 ± 0.2
13.5 MIN.
1.3 ± 0.2
1.5 ± 0.2
2.54 TYP.
Drain (D)
4.5 ± 0.2
0.65 ± 0.1
1. Gate
2. Drain
3. Source
2.7 ± 0.2
2.5 ± 0.1
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
Document No. TC-2511
(O.D. No. TC–8070)
Date Published January 1995 P
Printed in Japan
Gate (G)
Source (S)
Body diode
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source On-state Resistance RDS(on) 0.21 0.26 Ω VGS = 10 V, ID = 6 A
Gate to Source Cutoff Voltage VGS(off) 2.0 4.0 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance yfs 3.0 S VDS = 10 V, ID = 6 A
Drain Leakage Current IDSS 100
Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1090 pF VDS = 10 V
Output Capacitance Coss 420 pF VGS = 0
Reverse Transfer Capacitance Crss 80 pF f = 1 MHz
Turn-On Delay Time td(on) 20 ns VGS = 10 V
Rise Time tr 20 ns VDD = 150 V
Turn-Off Delay Time td(off) 50 ns ID = 6 A, RG = 10 Ω
Fall Time tf 15 ns RL = 25 Ω
Total Gate Charge QG 33 nC VGS = 10 V
Gate to Source Charge QGS 6.0 nC ID = 11 A
Gate to Drain Charge QGD 13 nC VDD = 200 V
Diode Forward Voltage VF(S-D) 1.0 V IF = 11 A, VGS = 0
Reverse Recovery Time trr 220 ns 1F = 11 A
Reverse Recovery Charge Qrr 1.0
µ
A VDS = 250V, VGS = 0
µ
C di/dt = 50 A/µs
2SK2341
Test Circuit 1 : Avalanche Capability Test Circuit 2 : Switching Time
V
GS
= 20 → 0 V
PG.
G
R
V
DD
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
V
Starting T
L
V
DD
PG.
V
GS
0
DS
ch
τ
µ
τ = 1 s
Duty Cycle ≤ 1%
G
R
D.U.T.
R
G
= 10 Ω
V
GS
Wave
Form
I
D
Wave
Form
V
I
D
L
R
V
DD
Test Circuit 3 : Gate Charge
D.U.T.
G
= 2 mA
PG.
I
50 Ω
R
L
V
DD
GS
GS (on)
10 %
0
10 %
0
td(on) tr td (off) tf
V
90 %
ID
ton toff
90 %
90 %
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
2SK2341
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 140 160
6040 80 100 120
C - Case Temperature - °C
T
FORWARD BIAS SAFE OPRATING AREA
100
ID (pulse)
Limited
10
DS (on)
R
ID (DC)
10 ms
200 ms
PW = 100 s
1 ms
TC = 25 °C
Single Pulse
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
60
50
40
30
20
10
PT - Total Power Dissipation - W
0
20 140 160
6040 80 100 120
T
C - Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
40
30
20 V
20
Pulsed
10 V
VGS = 8 V
ID - Drain Current - A
1
10 100 1 000
V
DS - Drain to Source Voltage - (V)
TRANSFER CHARACTERISTICS
100
TA = –25 °C
25 °C
10
75 °C
125 °C
1.0
ID - Drain Current - A
0.1
0
VDS - Drain to Source Voltage - V
DC
VDS = 10 V
Pulsed
51015
10
ID - Drain Current - A
0
V
DS - Drain to Source Voltage - V
51510
3
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