NEC 2SK2110 Datasheet
DATA SHEET
Source (S)
Internal diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NT
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
2SK2110
The 2SK2110 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
• Low ON resistance
RDS(on) = 1.5 Ω MAX. @VGS = 4.0 V, ID = 0.3 A
• High switching speed
on + toff < 100 ns
t
• Low parasitic capacitance
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1
2.5 ± 0.1
4.0 ± 0.25
1.5 ± 0.1
+0.03
0.41
–0.05
0.42
±0.06
0.8 MIN.
1.6 ± 0.2
S
1.5
3.0
D
0.47
±0.06
G
0.42
±0.06
EQUIVALENT CIRCUIT
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 100 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±0.5 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±1.0 A
Total Power Dissipation PT 16 cm2 × 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. D11230EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
Duty cycle ≤ 50 %
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 100 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 1.5 2.0 V
Forward Transfer Admittance |yfs|VDS = 10 V, ID = 0.3 A 0.4 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance Ciss VDS = 10 V, VGS = 0, 100 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 10 pF
Turn-On Delay Time td(on) VDD = 25 V, ID = 0.3 A 2 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 13 ns
RDS(on)1 VGS = 4.0 V, ID =0.3 A 0.95 1.5 Ω
RDS(on)2 VGS = 10 V, ID = 0.3 A 0.82 1.2 Ω
f = 1.0 MHz
VGS(on) = 10 V, RG = 10 Ω
RL = 83 Ω
38 pF
1.3 ns
38 ns
2SK2110
µ
A
µ
A
2
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