NEC 2SK2055 Datasheet
DATA SHEET
2.0 ±0.2
5.7 ±0.1
3.65 ±0.1
1.0
0.5 ±0.1
0.55
2.1
4.2
0.5 ±0.1
0.85
±0.1
SDG
5.4 ±0.25
1.5 ±0.1
0.4 ±0.05
Marking: NA3
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
2SK2055
The 2SK2055 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• New package intermediate between small-signal and power
models
• Can be directly driven by output of 5-V IC
• Low ON resistance
DS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A
R
RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A
PACKAGE DIMENSIONS (in mm)
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
Source
S:
Drain
D:
Gate
G:
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 100 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±2.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±4.0 A
Total Power Dissipation PT 7.5 cm2 × 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. D11226EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
Duty cycle ≤ 50 %
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 100 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 1.2 2.0 V
Forward Transfer Admittance |yfs|VDS = 10 V, ID = 1.0 A 2.0 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance Ciss VDS = 10 V, VGS = 0, 530 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 30 pF
Turn-On Delay Time td(on) VDD = 10 V, ID = 1.0 A 5 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 15 ns
RDS(on)1 VGS = 4 V, ID =1.0 A 0.28 0.45 Ω
RDS(on)2 VGS = 10 V, ID = 1.0 A 0.24 0.35 Ω
f = 1.0 MHz
VGS(on) = 10 V, RG = 10 Ω
RL = 10 Ω
150 pF
50 ns
90 ns
2SK2055
µ
A
µ
A
2
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