NEC 2SK2054 Datasheet

DATA SHEET
3.65 ±0.1
1.0
0.55
2.1
4.2
0.85 ±0.1
SDG
5.4 ±0.25
0.4 ±0.05
Marking: NA2
Source (S)
Internal diode
Gate protection diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: D: G:
Source Drain Gate
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
2SK2054
The 2SK2054 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.
This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters.

FEATURES

• New package intermediate between small-signal and power
models
• Can be directly driven by output of 5-V IC
• Low ON resistance
DS(on) = 0.25 MAX. @VGS = 4 V, ID = 1.5 A
R
RDS(on) = 0.20 MAX. @VGS = 10 V, ID = 1.5 A
PACKAGE DIMENSIONS (in mm)

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 60 V Gate to Source Voltage VGSS VDS = 0 ±20 V Drain Current (DC) ID(DC) ±3.0 A Drain Current (Pulse) ID(pulse) PW 10 ms, ±6.0 A
Total Power Dissipation PT 7.5 cm2 × 0.7 mm, ceramic substrate used 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C
Document No. D11225EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
Duty cycle 50 %
1996
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-Off Current IDSS VDS = 60 V, VGS = 0 1.0 Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 1.3 2.0 V Forward Transfer Admittance |yfs|VDS = 10 V, ID = 1.5 A 2.0 S Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Ciss VDS = 10 V, VGS = 0, 530 pF Output Capacitance Coss Reverse Transfer Capacitance Crss 50 pF Turn-On Delay Time td(on) VDD = 10 V, ID = 1.5 A 6 ns Rise Time tr Turn-Off Delay Time td(off) Fall Time tf 25 ns
RDS(on)1 VGS = 4 V, ID = 1.5 A 0.18 0.25 RDS(on)2 VGS = 10 V, ID = 1.5 A 0.15 0.20
f = 1.0 MHz
VGS(on) = 10 V, RG = 10 RL = 6
200 pF
80 ns 70 ns
2SK2054
µ
A
µ
A
2
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