NEC 2SK2053 Datasheet

DATA SHEET

2.0 ±0.2

5.7 ±0.1

3.65 ±0.1

1.0

0.5 ±0.1

0.55

2.1

4.2

0.5 ±0.1

0.85
±0.1

SDG

5.4 ±0.25

1.5 ±0.1

0.4 ±0.05

Marking: NA1

)

MOS FIELD EFFECT TRANSISTOR

2SK2053

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

The 2SK2053 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.

FEATURES

• New package intermediate between small signal and

power types

• Gate can be driven by 1.5 V

• Low ON resistance

DS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A

R

DS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A

R

PACKAGE DIMENSIONS (in mm)

EQUIVALENT CURCUIT

Drain (D)

PIN
CONNECTIONS

Source

Gate (G)

Gate
protection
diode

Internal
diode

Source (S

S:
D:
G:

Drain
Gate

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 16 V
Gate to Source Voltage VGSS VDS = 0 ±7.0 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, duty cycle ≤ 50 % ±10.0 A
Total Power Dissipation PT 7.5 cm2 × 0.7 mm ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Operating Temperature Topt –20 to +60 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Document No. D11224EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan

©

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 16 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±7.0 V, V DS = 0 ±3.0
Gate Cut-Off Voltage VGS(off) VDS = 3 V, ID = 1 mA 0.5 0.8 1.1 V
Forward Transfer Admittance |yfs|VDS = 3 V, ID = 2.5 A 4 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance Ciss VDS = 3 V, VGS = 0, f = 1.0 MHz 730 pF
Output Capacitance Coss 640 pF
Reverse Transfer Capacitance Crss 230 pF
Turn-ON Delay Time td(on) VDD = 3 V, ID = 2.5 A, VGS(on) = 3 V, 85 ns
Rise Time tr
Turn-OFF Delay Time td(off) 280 ns
Fall Time tf 310 ns

RDS(on)1 VGS = 1.5 V, ID = 0.5 A 0.19 0.40 Ω
RDS(on)2 VGS = 2.5 V, ID = 2.5 A 0.08 0.15 Ω
RDS(on)3 VGS = 4.0 V, ID = 2.5 A 0.06 0.12 Ω

RG = 10 Ω, RL = 1.2 Ω

450 ns

2SK2053

µ

A

µ

A

2