NEC 2SC5801-T3, 2SC5801 Datasheet
DATA SHEET
NPN SILICON RF TRANSISTOR
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• Low phase distortion, low voltage operation
• Ideal for OSC applications
• 3-pin lead-less minimold package
ORDERING INFORMATION
Part Number Quantity Supplying Form
2SC5801 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5801-T3 10 kpcs/reel • Pin 2 (Base) face the perforat i on side of the tape
2SC5801
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°°°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T
2
Mounted on 1.08 cm
Note
× 1.0 mm (t) glass epoxy PCB
CBO
CEO
EBO
C
Note
tot
P
j
stg
−
9.0 V
5.5 V
1.5 V
100 mA
140 mW
150
65 to +150
°
C
°
C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10085EJ02V0DS (2nd edition)
Date Published March 2002 CP(K)
Printed in Japan
The mark
••••
shows major revised points.
NEC Corporation 2001
NEC Compound Semiconductor Devices 2002
ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1) f
Gain Bandwidth Product (2) f
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure NF
Reverse Transfer Capacitance
CBO
VCB = 5 V, IE = 0 mA – – 600 nA
EBO
VEB = 1 V, IC = 0 mA – – 600 nA
Note 1
FE
h
S
S
C
VCE = 1 V, IC = 5 mA 100 120 145 –
T
VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.5 – GHz
T
VCE = 1 V, IC = 15 mA, f = 2 GHz 5.0 6.5 – GHz
2
21e
VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0 – dB
2
21e
VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 – dB
CE
= 1 V, IC = 10 mA, f = 2 GHz,
V
S
opt
Z
= Z
Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz – 0.6 0.8 pF
2SC5801
–1.92.5dB
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded
2.
hFE CLASSIFICATION
Rank FB
Marking E7
hFE Value 100 to 145
s, Duty Cycle ≤ 2%
µ
2
Data Sheet PU10085EJ02V0DS
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)
2SC5801
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
160
140
(mW)
tot
120
100
80
60
40
20
Total Power Dissipation P
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
(mA)
C
1
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
(pF)
re
0.8
0.6
0.4
0.2
Reverse Transfer Capacitance C
0231457689
Collector to Base Voltage VCB (V)
f = 1 MHz
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
400 A
50
(mA)
C
40
30
20
Collector Current I
10
0 1234567
Collector to Emitter Voltage VCE (V)
µ
360 A
µ
320 A
µ
µ
280 A
240 A
µ
µ
200 A
160 A
120 A
80 A
IB = 40 A
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
µ
µ
µ
µ
Data Sheet PU10085EJ02V0DS
3
2SC5801
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 1 V
10.1 10 100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 2 V
10.1 10 100
Collector Current IC (mA)
4
Data Sheet PU10085EJ02V0DS
2SC5801
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
8
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
101 100
Collector Current IC (mA)
MSG
MAG
CE
= 1 V
V
I
C
= 5 mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
8
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
101 100
Collector Current IC (mA)
MSG
MAG
VCE = 2 V
I
C
= 5 mA
15
10
5
|S
Insertion Power Gain |S
0.1 1 10
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
|
21e
20
15
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0.1 1 10
MSG
MAG
|S
Frequency f (GHz)
21e
21e
15
10
2
|
Insertion Power Gain |S
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0.1 1 10
2
|S
21e
|
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
MSG
MAG
(dB)
2
|
21e
25
20
15
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0.1 1 10
|S
Frequency f (GHz)
21e
|
2
VCE = 2 V
C
= 15 mA
I
|
2
VCE = 1 V
C
= 15 mA
I
Data Sheet PU10085EJ02V0DS
5
2SC5801
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
MAGMSG
15
(dB)
2
|
21e
10
|S
5
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
15
VCE = 1 V
f = 2 GHz
MAG
|S
(dB)
2
|
21e
10
5
21e
21e
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
MAGMSG
15
(dB)
2
|
2
|
21e
10
2
|S
21e
|
5
VCE = 1 V
f = 1 GHz
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
15
VCE = 2 V
f = 2 GHz
10
(dB)
2
|
21e
2
|
5
MAG
|S
21e
2
|
0
–5
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 4 GHz
5
(dB)
2
|
21e
0
–5
–10
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
|S
21e
2
|
MSG
MAG
0
–5
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 4 GHz
5
(dB)
2
|
21e
0
–5
–10
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
|S
21e
MSG
2
|
MAG
6
Data Sheet PU10085EJ02V0DS
2SC5801
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 1 GHz
5
G
a
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 1.5 GHz
5
4
G
a
18
15
(dB)
a
12
9
6
Associated Gain G
3
0
18
15
(dB)
a
12
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 2 V
5
f = 1 GHz
G
a
4
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 2 V
f = 1.5 GHz
5
G
4
a
18
15
(dB)
a
12
9
6
Associated Gain G
3
0
18
15
(dB)
a
12
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 1 V
f = 2 GHz
5
4
G
NF
a
C
(mA)
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
9
6
Associated Gain G
3
0
18
15
(dB)
a
12
9
6
Associated Gain G
3
0
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
VCE = 2 V
f = 2 GHz
5
4
G
a
3
2
Noise Figure NF (dB)
1
0
1 10 100
Collector Current I
NF
C
(mA)
9
6
Associated Gain G
3
0
18
15
(dB)
a
12
9
6
Associated Gain G
3
0
Data Sheet PU10085EJ02V0DS
7
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