NEC 2SC5606-T1 Datasheet

PRELIMINARY DATA SHEET

©

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

FEATURES

• Suitable for high-frequency oscillation

•fT = 25 GHz technology adopted

• 3-pin ultra super minimold

ORDERING INFORMATION

Part Number Quantity Supplying Form

2SC5606

2SC5606 50 pcs (Non reel) • 8 mm wide embossed taping
2SC5606-T1 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape

Remark

To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T

2

Mounted on 1.08 cm

Note

× 1.0 mm (t) glass epoxy substrate

CBO

CEO

EBO

C

Note

tot

P

j

stg

15 V

3.3 V

1.5 V
35 mA

115 mW
150

−

65 to +150

°

C

°

C

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14658EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan

The mark

••••

shows major revised points.

1999, 2000

ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Gain Bandwidth Product f
Insertion Power Gain
Noise Figure NF

Reverse Transfer Capacitance
Maximum Available Gain
Maximum Stable Power Gain

CBO

EBO

FE

h



S

re

C
MAG.
MSG.

VCB = 5 V, IE = 0 mA – – 200 nA
VEB = 1 V, IC = 0 mA – – 200 nA

Note 1

VCE = 2 V, IC = 5 mA 50 70 100 –

T

VCE = 2 V, IC = 20 mA, f = 2 GHz – 21 – GHz

2



21e

VCE = 2 V, IC = 20 mA, f = 2 GHz 10 12.5 – dB

VCE = 2 V, IC = 5 mA, f = 2 GHz,

= Z

Z

S

opt

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz – 0.21 0.3 pF

Note 3

VCE = 2 V, IC = 20 mA, f = 2 GHz – 14 – dB

Note 4

VCE = 2 V, IC = 20 mA, f = 2 GHz – 15 – dB

2SC5606

–1.21.5dB

Note 1.

Pulse measurement: PW ≤ 350
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when

2.

the emitter is connected to the guard pin

21

3.

4.

MAG. =

MSG. =

S

12

S

21

S

12

S

hFE CLASSIFICATION

Rank FB

Marking UA

FE

h

50 to 100

(k –

(k2 – 1) )

√√√√

s, Duty Cycle ≤ 2 %

µ

2

Preliminary Data Sheet P14658EJ2V0DS00

TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °°°°C)

2SC5606

TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE

200

Mounted on Glass Epoxy Board

(mW)

tot

150

115
100

50

Total Power Dissipation P

0

250 50 75 100 125 150

(1.08 cm

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

40

VCE = 2 V

30

(mA)

C

2

× 1.0 mm (t) )

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

1.0

(pF)

re

Reverse Transfer Capacitance C

0.1

1.00.1 10.0 100.0

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

40

30

(mA)

C

µ

650 A

IB 100 A step

f = 1 MHz

µ

µ

450 A

20

10

Collector Current I

0

0 0.60.40.2 0.8 1.0

Base to Emitter Voltage VBE (V)

DC CURRENT GAIN vs.
COLLECTOR CURRENT

1 000

FE

100

DC Current Gain h

10

0.1 10.01.0 100.0
Collector Current IC (mA)

VCE = 2 V

20

10

Collector Current I

0

04

12

Collector to Emitter Voltage VCE (V)

3

µ

250 A

µ

IB = 50 A

Preliminary Data Sheet P14658EJ2V0DS00

3

2SC5606

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

30

25

(GHz)

T

20

15

10

5

Gain Bandwidth Product f

0

1 10 100

Collector Current IC (mA)

INSERTION POWER GAIN

vs. FREQUENCY

35

30

(dB)

2

|

21e

25

V

CE

= 1 V

f = 2 GHz

VCE = 1 V
I

C

= 10 mA

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

30

25

(GHz)

T

20

15

10

5

Gain Bandwidth Product f

0

1 10 100

Collector Current IC (mA)

INSERTION POWER GAIN

vs. FREQUENCY

35

30

(dB)

2

|

21e

25

V

CE

= 2 V

f = 2 GHz

VCE = 2 V

C

= 20 mA

I

20

15

10

5

Insertion Power Gain |S

0

0.1 1.0 10.0
Frequency f (GHz)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

16
14

(dB)

2

|

12

21e

10

8
6

4
2

Insertion Power Gain |S

0

1 10 100

Collector Current IC (mA)

VCE = 1 V
f = 2 GHz

20

15

10

5

Insertion Power Gain |S

0

0.1 1.0 10.0
Frequency f (GHz)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

16
14

(dB)

2

|

12

21e

10

8
6

4
2

Insertion Power Gain |S

0

1 10 100

Collector Current IC (mA)

V
f = 2 GHz

CE

= 2 V

4

Preliminary Data Sheet P14658EJ2V0DS00

NOISE FIGURE vs.
COLLECTOR CURRENT

3.0

CE

= 2 V

V
f = 2 GHz

2.5

2.0

1.5

1.0

Noise Figure NF (dB)

0.5

0

1 10 100

Collector Current IC (mA)

2SC5606

Remark

The graphs indicate nominal characteristics.

Preliminary Data Sheet P14658EJ2V0DS00

5