NEC 2SC5508-T2, 2SC5508 Datasheet

PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
NPN SILICON RF TRANSISTOR
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA
•fT = 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number Quantity Packaging Style
2SC5508
2SC5508 Loose product (50 pcs) 2SC5508-T2 Taping product (3 kpcs/reel)
Remark
To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current I Total Power Dissipat i on Junction Temperature T Storage Temperature T
A
= +25 °C (free air)
T
Note
THERMAL RESISTANCE
Item Symbol Value Unit
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
CBO
CEO
EBO
C
Note
tot
P
j
stg
15 V
3.3 V
1.5 V 35 mA
115 mW 150 °C
–65 to +150 °C
Junction to Case Resis tance R Junction to Ambient Resistance R
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
Document No. P13865EJ1V0DS00 (1st edition) Date Published March 1999 N CP(K) Printed in Japan
th j-c
th j-a
The information in this document is subject to change without notice.
150 °C/W 650 °C/W
1999©
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter Symbol Tes t Condi tions MIN. TYP. MAX. Unit
DC Characteristics
FE
h
re
C
|
S MAG MSG
P
OIP
CBO
EBO
21e
VCB = 5 V, IE = 0 200 nA VEB = 1 V, IC = 0 200 nA
Note 1
VCE = 2 V, IC = 5 mA 50 70 100
Note 2
VCB = 2 V, IE = 0, f = 1 MHz 0.18 0.24 pF
T
VCE = 3 V, IC = 30 mA, f = 2 GHz 20 25 GHz
2
|
VCE = 2 V, IC = 20 mA, f = 2 GHz 14 17 dB
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz 19
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz 20 dB VCE = 2 V, IC = 20 mA
-1
VCE = 2 V, IC = 20 mA
3
Note 5
, f = 2 GHz
Note 5
, f = 2 GHz
Collector Cut-off Current I Emitter Cut-off Current I DC Current Gain RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product f Noise Figure NF VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Z Insertion Power Gain Maximum Available Power Gain Maximum Stable Power Gain Output Power at 1 dB
Compression Point Output Power at Third Order
Intercept Point
2SC5508
opt
–1.11.5dB
–11–dBm
–22– –
Notes 1.
Pulse measurement PW ≤ 350 Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when
2.
the emitter is connected to the guard pin
S21 MAG =
3.
S
S MSG =
4.
S
Collector current when P
5.
hFE CLASSIFICATION
Rank FB
Marking T79
FE
h
12
21 12
k – k2 – 1
50 to 100
-1
is output
s, Duty cycle ≤ 2 %
µ
2
Preliminary Data Sheet P13865EJ1V0DS00
TYPICAL CHARACTERISTICS (TA = +25 °C)
Thermal/DC Characteristics
2SC5508
Total Power Dissipation vs. Ambient Temperature, Case Temperature
250
PT-TA: Free air P
T-TA
:
200
(mW)
T
Mounted on ceramic board
(15 mm × 15 mm, t = 0.6 mm)
T-TC
: When case temperature
P
is specified
150
100
50
(mA)
C
Collector Current I
Collector Current vs. DC Base Voltage
50
VCE = 2 V
40
30
20
10
Total Power Dissipation P
0
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient Temperature TA (°C), Case Temperature TC (°C)
Collector Current vs. Collector to Emitter Voltage
µµ
50
750 A
40
(mA)
C
30
20
700 A
650 A
µ
600 A
µ
550 A
µ
500 A
µ
450 A
µ
400 A
µ
350 A
µ
300 A
µ
250 A
µ
200 A
µ
150 A
µ
100 A
µ
IB = 50 A
200 100
FE
µ
10
DC Base Voltage VBE (V)
DC Current Gain vs. Collector Current
VCE = 2 V
Collector Current I
10
0
012345
Collector to Emitter Voltage V
Capacitance/fT Characteristics
Reverse Transfer Capacitance vs. Collector to Base Voltage
0.50
(pF)
re
0.40
0.30
0.20
0.10
Reverse Transfer Capacitance C
0
0 1.0 2.0 3.0 4.0 5.0
Collector to Base Voltage V
CE
(V)
f = 1 MHz
CB
(V)
DC Current Gain h
1
0.001
0.01 0.1 1 10 100 Collector Current I
C
(mA)
Gain Bandwidth Product vs. Collector Current
30
VCE = 3 V f = 2 GHz
25
(GHz)
T
20
15
10
5
Gain Bandwidth Product f
0
1
10 100
Collector Current IC (mA)
Preliminary Data Sheet P13865EJ1V0DS00
3
Gain Characteristics
Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Frequency
40 35 30
(dB)
2
|
25
21e
20 15 10
5
Insertion Power Gain |S
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
0.1 1.0 10.0
MSG
2
|S
21e
|
Frequency f (GHz)
MAG
VCE = 2 V
C
= 20 mA
I
2SC5508
Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current
30
f = 1 GHz
CE
= 2 V
V
25
MSG
20
(dB)
2
|
21e
15
10
5
Insertion Power Gain |S
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
0
1 10 100 1 10 100
Collector Current IC (mA)
Output Characteristics
Output Power, Collector Current vs. Input Power
20
f = 1 GHz VCE = 2 V
15
(dBm)
out
10
Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current
30
25
f = 2 GHz
CE
= 2 V
V
MAG
MAG
20
(dB)
2
|S
21e
|
2
|
21e
15
MSG
2
|S
21e
|
10
5
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0
C
Collector Current I
(mA)
Output Power, Collector Current vs. Input Power
125
20
125
f = 2 GHz
P
out
100
(mA)
C
(dBm)
75
out
15
10
VCE = 2 V
P
out
100
(mA)
C
75
5
Output Power P
0
–5
–20 –15 –10 –5 0 5
Input Power Pin (dBm)
4
50
I
C
Collector Current I
25
0
Preliminary Data Sheet P13865EJ1V0DS00
5
Output Power P
0
–5
–20 –15 –10 –5 0 5
Input Power P
in
(dBm)
50
I
C
Collector Current I
25
0
Noise Characteristics
Noise Figure, Associated Gain vs. Collector Current Noise Figure, Associated Gain vs. Collector Current
6
5
4
2SC5508
f = 1.0 GHz V
CE
= 2 V
G
a
30
25
20
(dB)
a
6
5
4
G
a
f = 1.5 GHz V
CE
= 2 V
30
25
20
(dB)
a
3
2
Noise Figure NF (dB)
NF
1
0
1 10 100
Collector Current I
C
(mA)
15
10
Associated Gain G
5
0
3
2
NF
Noise Figure NF (dB)
1
0
1 10 100
C
Collector Current I
(mA)
Noise Figure, Associated Gain vs. Collector Current Noise Figure, Associated Gain vs. Collector Current
6
5
4
Ga
f = 2.0 GHz V
CE
= 2 V
3
2
Noise Figure NF (dB)
NF
1
0
1 10 100 1 10 100
Collector Current IC (mA)
30
25
(dB)
a
20
15
10
Associated Gain G
5
0
6
5
4
3
2
Noise Figure NF (dB)
1
0
Collector Current I
Ga
NF
f = 2.5 GHz V
CE
= 2 V
C
(mA)
15
10
Associated Gain G
5
0
30
25
(dB)
a
20
15
10
Associated Gain G
5
0
Preliminary Data Sheet P13865EJ1V0DS00
5
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