NEC 2SC5508-T2, 2SC5508 Datasheet

PRELIMINARY DATA SHEET

NPN SILICON RF TRANSISTOR

FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

• Ideal for low-noise, high-gain amplification applications

• NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA

•fT = 25 GHz technology

• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number Quantity Packaging Style

2SC5508

2SC5508 Loose product (50 pcs) 2SC5508-T2 Taping product (3 kpcs/reel)

Remark

To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Ratings Unit Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current I Total Power Dissipat i on Junction Temperature T Storage Temperature T

A

= +25 °C (free air)

T

Note

THERMAL RESISTANCE

Item Symbol Value Unit

• 8 mm wide emboss taping

• 1 pin (emitter), 2 pin (collector) feed hole direction

CBO

CEO

EBO

C

Note

tot

P

j

stg

15 V

3.3 V

1.5 V 35 mA

115 mW 150 °C

–65 to +150 °C

Junction to Case Resis tance R Junction to Ambient Resistance R

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

Document No. P13865EJ1V0DS00 (1st edition) Date Published March 1999 N CP(K) Printed in Japan

th j-c

th j-a

The information in this document is subject to change without notice.

150 °C/W 650 °C/W

1999©

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter Symbol Tes t Condi tions MIN. TYP. MAX. Unit

DC Characteristics

FE

h

re

C

|

S MAG MSG

P

OIP

CBO

EBO

21e

VCB = 5 V, IE = 0 – – 200 nA VEB = 1 V, IC = 0 – – 200 nA

Note 1

VCE = 2 V, IC = 5 mA 50 70 100 –

Note 2

VCB = 2 V, IE = 0, f = 1 MHz – 0.18 0.24 pF

T

VCE = 3 V, IC = 30 mA, f = 2 GHz 20 25 – GHz

2

|

VCE = 2 V, IC = 20 mA, f = 2 GHz 14 17 – dB

Note 3

VCE = 2 V, IC = 20 mA, f = 2 GHz – 19 – –

Note 4

VCE = 2 V, IC = 20 mA, f = 2 GHz – 20 – dB VCE = 2 V, IC = 20 mA

-1

VCE = 2 V, IC = 20 mA

3

Note 5

, f = 2 GHz

Note 5

, f = 2 GHz

Collector Cut-off Current I Emitter Cut-off Current I DC Current Gain RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product f Noise Figure NF VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Z Insertion Power Gain Maximum Available Power Gain Maximum Stable Power Gain Output Power at 1 dB

Compression Point Output Power at Third Order

Intercept Point

2SC5508

opt

–1.11.5dB

–11–dBm

–22– –

Notes 1.

Pulse measurement PW ≤ 350 Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when

2.

the emitter is connected to the guard pin

S21 MAG =

3.

S

S MSG =

4.

S

Collector current when P

5.

hFE CLASSIFICATION

Rank FB

Marking T79

FE

h

12

21 12

k – k2 – 1

50 to 100

-1

is output

s, Duty cycle ≤ 2 %

µ

2

Preliminary Data Sheet P13865EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °C)

Thermal/DC Characteristics

2SC5508

Total Power Dissipation vs. Ambient Temperature, Case Temperature

250

PT-TA: Free air P

T-TA

:

200

(mW)

T

Mounted on ceramic board

(15 mm × 15 mm, t = 0.6 mm)

T-TC

: When case temperature

P

is specified

150

100

50

(mA)

C

Collector Current I

Collector Current vs. DC Base Voltage

50

VCE = 2 V

40

30

20

10

Total Power Dissipation P

0

0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2

Ambient Temperature TA (°C), Case Temperature TC (°C)

Collector Current vs. Collector to Emitter Voltage

µµ

50

750 A

40

(mA)

C

30

20

700 A

650 A

µ

600 A

µ

550 A

µ

500 A

µ

450 A

µ

400 A

µ

350 A

µ

300 A

µ

250 A

µ

200 A

µ

150 A

µ

100 A

µ

IB = 50 A

200 100

FE

µ

10

DC Base Voltage VBE (V)

DC Current Gain vs. Collector Current

VCE = 2 V

Collector Current I

10

0

012345

Collector to Emitter Voltage V

Capacitance/fT Characteristics

Reverse Transfer Capacitance vs. Collector to Base Voltage

0.50

(pF)

re

0.40

0.30

0.20

0.10

Reverse Transfer Capacitance C

0

0 1.0 2.0 3.0 4.0 5.0

Collector to Base Voltage V

CE

(V)

f = 1 MHz

CB

(V)

DC Current Gain h

1

0.001

0.01 0.1 1 10 100 Collector Current I

C

(mA)

Gain Bandwidth Product vs. Collector Current

30

VCE = 3 V f = 2 GHz

25

(GHz)

T

20

15

10

5

Gain Bandwidth Product f

0

1

10 100

Collector Current IC (mA)

Preliminary Data Sheet P13865EJ1V0DS00

3

Gain Characteristics

Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Frequency

40 35 30

(dB)

2

|

25

21e

20 15 10

5

Insertion Power Gain |S

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

0

0.1 1.0 10.0

MSG

2

|S

21e

|

Frequency f (GHz)

MAG

VCE = 2 V

C

= 20 mA

I

2SC5508

Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current

30

f = 1 GHz

CE

= 2 V

V

25

MSG

20

(dB)

2

|

21e

15

10

5

Insertion Power Gain |S

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

0

1 10 100 1 10 100

Collector Current IC (mA)

Output Characteristics

Output Power, Collector Current vs. Input Power

20

f = 1 GHz VCE = 2 V

15

(dBm)

out

10

Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current

30

25

f = 2 GHz

CE

= 2 V

V

MAG

20

(dB)

2

|S

21e

|

2

|

21e

15

MSG

2

|S

21e

|

10

5

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain |S

0

C

Collector Current I

(mA)

Output Power, Collector Current vs. Input Power

125

20

125

f = 2 GHz

P

out

100

(mA)

C

(dBm)

75

out

15

10

VCE = 2 V

P

out

100

(mA)

C

75

5

Output Power P

0

–5

–20 –15 –10 –5 0 5

Input Power Pin (dBm)

4

50

I

C

Collector Current I

25

0

Preliminary Data Sheet P13865EJ1V0DS00

5

Output Power P

0

–5

–20 –15 –10 –5 0 5

Input Power P

in

(dBm)

50

I

C

Collector Current I

25

0

Noise Characteristics

Noise Figure, Associated Gain vs. Collector Current Noise Figure, Associated Gain vs. Collector Current

6

5

4

2SC5508

f = 1.0 GHz V

CE

= 2 V

G

a

30

25

20

(dB)

a

6

5

4

G

a

f = 1.5 GHz V

CE

= 2 V

30

25

20

(dB)

a

3

2

Noise Figure NF (dB)

NF

1

0

1 10 100

Collector Current I

C

(mA)

15

10

Associated Gain G

5

0

3

2

NF

Noise Figure NF (dB)

1

0

1 10 100

C

Collector Current I

(mA)

Noise Figure, Associated Gain vs. Collector Current Noise Figure, Associated Gain vs. Collector Current

6

5

4

Ga

f = 2.0 GHz V

CE

= 2 V

3

2

Noise Figure NF (dB)

NF

1

0

1 10 100 1 10 100

Collector Current IC (mA)

30

25

(dB)

a

20

15

10

Associated Gain G

5

0

6

5

4

3

2

Noise Figure NF (dB)

1

0

Collector Current I

Ga

NF

f = 2.5 GHz V

CE

= 2 V

C

(mA)

15

10

Associated Gain G

5

0

30

25

(dB)

a

20

15

10

Associated Gain G

5

0

Preliminary Data Sheet P13865EJ1V0DS00

5