NEC 2SC5507-T2, 2SC5507 Datasheet

PRELIMINARY DATA SHEET

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW CURRENT,

LOW NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES

• Low noise and high gain with low collector current

• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA

• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA

•fT = 25 GHz technology

• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

ORDERING INFORMATION

Part Number Quantity Packaging Style

2SC5507

2SC5507 Loose product (50 pcs)
2SC5507-T2 Taping product (3 kpcs/reel)

Remark

To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipat i on
Junction Temperature T
Storage Temperature T

A

= +25 °C (free air)

T

Note

THERMAL RESISTANCE

Item Symbol Value Unit

• 8 mm wide emboss taping

• 1 pin (emitter), 2 pin (collector) feed hole direction

CBO

CEO

EBO

C

Note

tot

P

j

stg

15 V

3.3 V

1.5 V
12 mA
39 mW

150 °C

–65 to +150 °C

Junction to Case Resis tance R
Junction to Ambient Resistance R

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

Document No. P13864EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan

th j-c

th j-a

The information in this document is subject to change without notice.

240 °C/W
650 °C/W

1999©

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter Symbol Tes t Condi tions MIN. TYP. MAX. Unit

DC characteristic s

FE

h

re

C

|

S

MSG

P

OIP

CBO

EBO

21e

VCB = 5 V, IE = 0 – – 100 nA
VEB = 1 V, IC = 0 – – 100 nA

Note 1

VCE = 2 V, IC = 5 mA 50 70 100 –

Note 2

VCB = 2 V, IE = 0, f = 1 MHz – 0.08 0.12 pF

T

VCE = 3 V, IC = 10 mA, f = 2 GHz 20 25 – GHz

2

|

VCE = 2 V, IC = 5 mA, f = 2 GHz 14 17 – dB

Note 3

VCE = 2 V, IC = 5 mA, f = 2 GHz – 22 – dB
VCE = 2 V, IC = 5 mA

-1

VCE = 2 V, IC = 5 mA

3

Note 4

, f = 2 GHz

Note 4

, f = 2 GHz

Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
RF Characteristics
Reverse Transfer Capacitance
Gain Bandwidth Product f
Noise Figure NF VCE = 2 V, IC = 2 mA, f = 2 GHz, ZS = Z
Insertion Power Gain
Maximum Stable Power Gain
Output Power at 1 dB

Compression Point
Output Power at Third Order

Intercept Point

2SC5507

opt

–1.21.5dB

–5–dBm

–15– –

Notes 1.

Pulse measurement PW ≤ 350
Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when

2.

the emitter is connected to the guard pin

S
MSG =

3.

S

Collector current when P

4.

21
12

hFE CLASSIFICATION

Rank FB

Marking T78

FE

h

-1

50 to 100

s, Duty cycle ≤ 2%

µ

is output

2

Preliminary Data Sheet P13864EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °C)

Thermal/DC Characteristics

Total Power Dissipation vs.
Ambient Temperature, Case Temperature

250

200

(mW)

T

150

PT-TA: Free air

T-TA

:

Mounted on ceramic board

P

(15 mm × 15 mm, t = 0.6 mm)

T-TC

: When case temperature

P

is specified

50

40

(mA)

C

30

2SC5507

Collector Current vs. DC Base Voltage

VCE = 2 V

100

50

20

10

Collector Current I

Total Power Dissipation P

0

0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient Temperature TA (°C), Case Temperature TC (°C)

Collector Current vs. Collector to Emitter Voltage

25

20

(mA)

C

15

10

5

Collector Current I

300 A

µ
µ

280 A

µ

260 A

µ

240 A

µ

220 A

µ

200 A

µ

180 A

µ

160 A

µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ
µ

60 A

µ

40 A

IB = 20 A

200
100

FE

10

µ

DC Current Gain h

DC Base Voltage VBE (V)

DC Current Gain vs. Collector Current

1

012345

Collector to Emitter Voltage V

CE

(V)

0.001

0.01 0.1 1 10 100

C

Collector Current I

(mA)

VCE = 2 V

Capacitance/fT Characteristics

Reverse Transfer Capacitance vs. Collector to Base Voltage

0.30

0.25

0.20

0.15

0.10

0.05

Reverse Transfer Capacitance Cre (pF)

0 1.0 2.0 3.0 4.0

Collector to Base Voltage VCB (V)

30

f = 1 MHz

25

20

15

10

5

Gain Bandwidth Product fT (GHz)

5.0

Preliminary Data Sheet P13864EJ1V0DS00

0

Gain Bandwidth Product vs. Collector Current

VCE = 3 V
f = 2 GHz

1

10 100

Collector Current IC (mA)

3

Gain Characteristics

Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Frequency

40
35
30

(dB)

2

|

25

21e

20
15
10

5

Insertion Power Gain |S

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

0

0.1 1.0 10.0

MSG

2

|S

21e

|

Frequency f (GHz)

VCE = 2 V
I

C

= 5 mA

MAG

2SC5507

Insertion Power Gain, Maximum Stable Power Gain
vs. Collector Current

30

MSG

(dB)

2

|

21e

|S

25

20

15

10

5

Maximum Stable Power Gain MSG (dB)

Insertion Power Gain

0

1 10 100 1 10 100

Collector Current IC (mA)

Output Characteristics

Output Power, Collector Current vs. Input Power

10

f = 1 GHz
VCE = 2 V

5

(dBm)

out

0

Insertion Power Gain, Maximum Available Power Gain,
Maximum Stable Power Gain vs. Collector Current

(dB)

2

|

21e

30

25

20

15

MSG

MAG

2

|S

21e

|

f = 1 GHz
V

CE

= 2 V

2

|S

21e

|

f = 2 GHz
V

CE

= 2 V

10

5

Insertion Power Gain |S

Maximum Available Power Gain MAG (dB)

Maximum Stable Power Gain MSG (dB)

0

C

Collector Current I

(mA)

Output Power, Collector Current vs. Input Power

25

P

out

20

(mA)

C

15

10

(dBm)

out

5

0

f = 2 GHz
VCE = 2 V

25

P

out

20

(mA)

C

15

–5

Output Power P

–10

–15

–30 –25 –20 –15 –10 –5

Input Power Pin (dBm)

4

10

I

C

5

Collector Current I

0

Preliminary Data Sheet P13864EJ1V0DS00

–5

Output Power P

–10

–15

–30 –25 –20 –15 –10 –5

Input Power P

in

(dBm)

10

I

C

Collector Current I

5

0