NEC 2SC5409-T1, 2SC5409 Datasheet

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5409

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE

PACKAGE DIMENSIONS (in mm)

• High fT 16 GHz TYP.

• High gain

2

21e|

= 14 dB TYP.

|S @f = 2 GHz, VCE = 2 V, IC = 20 mA

• NF = 1.1 dB, @f = 2 GHz V

CE = 2 V, IC = 3 mA

• 6-pin Small Mini Mold Package

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE 2SC5409-T1 3 kpcs/reel 8-mm wide emboss taping, 6-pin

(collector) feed hole direction

Remark To order evaluation samples, consult your NEC sales person-

nel (supported in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

PIN CONNECTIONS

PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 90 mW Junction Temperature Tj 150 °C Storage Temperature Tstg –65 to +150 °C

E: Emitter C: Collector B: Base

1.3

2.0±0.2

0.650.65

0.7

0.9±0.1

2.1±0.1

1.25±0.1

T97

EE

B

0 to 0.1

CEE

+0.1

0.2

+0.1

0.15

–0

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

Document No. P12096EJ1V0DS00 (1st edition) Date Published April 1997 N Printed in Japan

©

1997

2SC5409

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1 Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1 DC Current Gain hFE VCE = 2 V, IC = 20 mA Gain Bandwidth Product fT VCE = 2 V, IC = 20 mA, f = 2.0 GHz 13 16 GHz Feed-back Capacitance Cre VCB = 2 V, IE = 0, f = 1 MHz Insertion Power Gain |S21e|

2

VCE = 2 V, IC = 20 mA, f = 2.0 GHz 12 14 dB

Noise Figure NF VCE = 2 V, IC = 3 mA, f = 2.0 GHz 1.1 1.8 dB

Rank FB Marking T97 hFE 70 to 140

Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %, pulsed

2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.

Note 1

Note 2

70 140

0.2 0.3 pF

µ

A

µ

A

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

200

Free Air

100

90 mW

- Total Power Dissipation - mW

T

P

0

50

A

- Ambient Temperature - °C

T

100 150

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

25

20

15

10

- Collector Current - mA

C

I

5

0

1.0 2.0 3.0

µ

200 A 180 A

µ

160 A

µ µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ

60 A

µ

40 A

I

B =

20 A

µ

VCE - Collector to Emitter Voltage - V

2

COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE

50

V

CE =

2 V

40

30

20

- Collector Current - mA

C

I

10

0

BE

- Base to Emitter Voltage - V

V

DC CURRENT GAIN vs.

500

COLLECTOR CURRENT

200

100

50

- DC Current Gain

FE

h

20

10

1

2 5 10 20 50 100

I

C

- Collector Current - mA

0.5 1.0

V

CE =

2 V

V

CE =

1 V

20

q

T

vs. IC characteristics

f

VCE = 2 V f = 2 GHz

18 16 14 12

|S

21e

|2 vs. IC characteristics

2SC5409

VCE = 2 V f = 2 GHz

10

8 6

- Insertion Power Gain - dB

2

|

4

- Gain Bandwidth Product - GHz

T

f

21e

|S

2

0.5

0

C

- Collector Current - mA

I

re

vs. V

CB

C

f = 1 MHz

0

1 10 100 1 10 100

I

C

- Collector Current - mA

C

characteristics

NF vs. I

4

VCE = 2 V f = 2 GHz

0.4

3

0.3

2

0.2

NF - Noise Figure - dB

1

- Feed-back Capacitance - pF

0.1

re

C

0

110

C

- Collector Current - mA V

I

40

30

20

- Insertion Power Gain - dB

2

|

10

21e

|S

0

0.1 0.5 1.0 2.0 2.6

100 1 10 100

|S

21e

|2 vs. f characteristics

0

CB

- Collector to Base Voltage - V

VCE = 2 V

I

C

= 20 mA

C

= 3 mA

I

f - Fre

uency - GHz

3