NEC 2SC5408, 2SC5408-T1 Datasheet
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5408
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
PACKAGE DIMENSIONS (in mm)
• High fT
17 GHz TYP.
• High gain
2
21e|
= 15.5 dB TYP.
|S
@f = 2 GHz, VCE = 2 V, IC = 7 mA
• NF = 1.1 dB, @f = 2 GHz V
CE = 2 V, IC = 1 mA
• 6-pin Small Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY PACKING STYLE
2SC5408-T1 3 kpcs/reel 8-mm wide emboss taping, 6-pin
(collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales person-
nel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PIN CONNECTIONS
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 30 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
E: Emitter
C: Collector
B: Base
1.3
2.0±0.2
0.650.65
0.7
0.9±0.1
2.1±0.1
1.25±0.1
T1E
EE
B
0 to 0.1
CEE
+0.1
0.2
+0.1
0.15
–0
–0
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
Document No. P12095EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
©
1997
2SC5408
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1
DC Current Gain hFE VCE = 2 V, IC = 7 mA
Gain Bandwidth Product fT VCE = 2 V, IC = 7 mA, f = 2.0 GHz 17 GHz
Feed-back Capacitance Cre VCB = 2 V, IE = 0, f = 1 MHz
Insertion Power Gain |S21e|
2
VCE = 2 V, IC = 7 mA, f = 2.0 GHz 13 15.5 dB
Noise Figure NF VCE = 2 V, IC = 1 mA, f = 2.0 GHz 1.1 1.8 dB
Rank FB
Marking T1E
hFE 70 to 40
Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %, pulsed
2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.
Note 1
Note 2
70 140
0.1 0.15 pF
µ
A
µ
A
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
100
- Total Power Dissipation - mW
T
P
0
50
A
- Ambient Temperature - °C
T
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
25
20
15
10
- Collector Current - mA
C
I
5
30 mW
100 150
200 A
µ
180 A
µ
160 A
µ
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
I
B =
20 A
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
V
CE =
2 V
40
30
20
- Collector Current - mA
C
I
10
0
BE
- Base to Emitter Voltage - V
V
DC CURRENT GAIN vs.
500
COLLECTOR CURRENT
200
100
50
- DC Current Gain
FE
h
20
0.5 1.0
V
CE =
V
CE =
1 V
2 V
0
1.0 2.0 3.0
VCE - Collector to Emitter Voltage - V
10
1
2 5 10 20 50 100
I
C
- Collector Current - mA
2
T
q
vs. IC characteristics
f
20
10
- Gain Bandwidth Product - GHz
T
f
VCE = 2 V
f = 2 GHz
21e
|2 vs. IC characteristics
|S
18
16
14
12
10
8
6
- Insertion Power Gain - dB
2
|
4
21e
|S
2
2SC5408
VCE = 2 V
f = 2 GHz
0.3
0
I
C
- Collector Current - mA
C
re
vs. V
CB
f = 1 MHz
0
1 10 100 1 10 100
C
- Collector Current - mA
I
C
NF vs. I
characteristics
4
VCE = 2 V
f = 2 GHz
3
0.2
2
NF - Noise Figure - dB
1
0
110
I
C
- Collector Current - mA VCB - Collector to Base Voltage - V
100 1 10 100
|S
21e
|2 vs. f characteristics
0.1
- Feed-back Capacitance - pF
re
C
0
40
VCE = 2 V
30
20
- Insertion Power Gain - dB
2
10
|
21e
|S
0
0.1 0.5 1.0 2.0 2.6
f - Fre
uency - GHz
C
= 7 mA
I
I
C
= 1 mA
3
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