DATA SHEET
SILICON TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
2SC5288
The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
•P–1 = 24 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
• 4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
2SC5288-T1 3 Kpcs/Reel Embossed tape 8 mm wide.
Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
Quantity Packing Style
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 9.0 V
Collector to Emitter Voltage VCEO 6.0 V
Emitter to Base Voltage VEBO 2.0 V
Collector Current IC 150 mA
Total Power Dissipation PT 200 (CW) mW
1.0 (duty = 1/8)
2.5 (duty = 1/24)
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Note
Note
W
W
PACKAGE DRAWING
+0.2
2.8
–0.05
0.4
–0.3
+0.2
1.5
–0.1
2
+0.1
T-89
(1.8)
2.9±0.2
0.850.95
1
+0.1
–0.05
0.6
5°
5°
+0.2
–0.1
0.8
1.1
5°
5°
0 to 0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
(Unit: mm)
+0.1
–0.05
0.4
3
(1.9)
4
+0.1
–0.05
0.4
+0.1
–0.06
0.16
Note Pulse period is 10 msec or less.
Document No. P10249EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
©
1995
2SC5288
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 2.5
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 2.5
DC Current Gain hFE VCE = 3.6 V, IC = 100 mA
Output Power P–1 VCC = 3.6 V, f = 1.9 GHz, 23 24 dBm
Power Gain GP I Cq = 1 mA (class AB operation) 7 8 dB
Collector Efficiency
η
C Duty factor 1/8 50 60 %
Note Pulse Measurement: PW ≤ 350 µs, Duty cycle ≤ 2 %, Pulsed
FE Classification
h
Rank FB
Marking T89
hFE more than 60
Note
60 —
µ
A
µ
A
APPLICATION EXAMPLES
(1) Power amplifier for DECT
+3 dBm PO = 27 dBm
(2) Power amplifier for PHS
+7 dBm PL = 23 dBm
2SC52892SC52882SC5192
2SC52892SC5288
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
500
VCE = 3.6 V
400
300
200
- Collector Current - mA
C
I
100
2SC5288
0 0.5 1.0 1.5
V
BE
- Base to Emitter Voltage - V
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
500
400
300
200
- Collector Current - mA
C
I
100
B
=
I
5.5 mA
5.0 mA
4.0 mA
3.0 mA
2.0 mA
1.0 mA
µ
500 A
01
V
CE
- Collector to Emitter Voltage - V
234
3
2SC5288
S-Parameters
(VCE = 3.0 V, IC = 10 mA)
FREQUENCY S11 S21 S12 S22
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
1 500.000 000 719.74 mU 145.59 2.5304 U 49.912 92.605 mU 32.197 269.43 mU –162.09
1 600.000 000 725.17 mU 142.26 2.3524 U 46.6 96.439 mU 32.428 277.83 mU –164.53
1 700.000 000 730.14 mU 139.35 2.2024 U 43.606 98.551 mU 31.724 285.95 mU –167.17
1 800.000 000 734.51 mU 136.33 2.0758 U 40.652 101.97 mU 32.26 291.71 mU –169.94
1 900.000 000 736.09 mU 133.47 1.9504 U 37.767 105.91 mU 32.58 296.81 mU –172.29
2 000.000 000 741.91 mU 131.09 1.8424 U 35.152 109.67 mU 32.724 306.06 mU –174.21
2 100.000 000 748.73 mU 128.78 1.7558 U 32.448 112.75 mU 32.428 315.33 mU –176.37
2 200.000 000 754.01 mU 126.44 1.667 U 29.578 117.1 mU 31.998 328.73 mU –178.23
2 300.000 000 759.69 mU 124.26 1.5776 U 26.9 120.12 mU 31.877 339.48 mU 179.63
2 400.000 000 766.56 mU 122.08 1.5164 U 24.484 123.62 mU 30.885 350.98 mU 178.09
2 500.000 000 771.87 mU 119.93 1.4454 U 21.959 126.88 mU 30.505 361.52 mU 175.96
(VCE = 3.0 V, IC = 30 mA)
FREQUENCY S11 S21 S12 S22
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
1 500.000 000 718.13 mU 140.47 2.906 U 51.601 58.392 mU 45.508 366.98 mU 172.27
1 600.000 000 722.71 mU 137.52 2.705 U 48.766 103.52 mU 45.019 375.84 mU 170.43
1 700.000 000 727.33 mU 134.99 2.529 U 45.978 163.77 mU 44.249 381.99 mU 168.46
1 800.000 000 732.6 mU 132.15 2.3833 U 43.462 112.93 mU 43.234 387.24 mU 166.61
1 900.000 000 735.5 mU 129.63 2.2398 U 41.131 117.39 mU 42.578 390.16 mU 165.06
2 000.000 000 740.45 mU 127.49 2.1224 U 36.757 123.34 mU 41.657 397.12 mU 163.13
2 100.000 000 745.53 mU 125.33 2.0153 U 36.255 129.41 mU 40.651 407.11 mU 161.77
2 200.000 000 750.91 mU 123.06 1.9181 U 33.743 131.93 mU 38.405 418.19 mU 159.94
2 300.000 000 759.01 mU 121.14 1.8178 U 31.223 136.48 mU 37.711 426.5 mU 158.37
2 400.000 000 761.08 mU 119.16 1.7408 U 28.942 140.61 mU 37.014 434.53 mU 157.33
2 500.000 000 767.45 mU 116.96 1.6687 U 27.03 144.07 mU 35.399 441.36 mU 155.85
(VCE = 3.0 V, IC = 50 mA)
FREQUENCY S11 S21 S12 S22
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
1 500.000 000 721.15 mU 139.11 2.9537 U 51.692 100.55 mU 49.053 400.14 mU 168.02
1 600.000 000 727.05 mU 136.26 2.7434 U 49.146 105.85 mU 47.828 407.06 mU 166.73
1 700.000 000 730.75 mU 133.92 2.5727 U 46.272 111.69 mU 46.851 413.33 mU 164.57
1 800.000 000 735.5 mU 131.13 2.4209 U 44.011 116.44 mU 45.585 417.55 mU 162.53
1 900.000 000 738.27 mU 128.6 2.2735 U 41.521 121.1 mU 44.857 421.25 mU 161.09
2 000.000 000 742.45 mU 126.48 2.1536 U 39.297 127.33 mU 43.381 428.43 mU 159.66
2 100.000 000 749.88 mU 124.38 2.0444 U 36.818 131.74 mU 42.102 438.22 mU 157.56
2 200.000 000 754 mU 122.2 1.9435 U 34.516 135.72 mU 40.877 447.62 mU 156.27
2 300.000 000 758.95 mU 120.32 1.8414 U 32.182 140.35 mU 39.707 455.11 mU 154.95
2 400.000 000 765.69 mU 118.28 1.7677 U 29.845 144.86 mU 38.335 463.97 mU 154
2 500.000 000 770.1 mU 116.29 1.6901 U 27.973 148.52 mU 36.575 469.1 mU 152.35
4