NEC 2SC5195-T1 Datasheet
DATA SHEET
SILICON TRANSISTOR
2SC5195
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES PACKAGE DRAWINGS
• Low Voltage Operation, Low Phase Distortion (Unit: mm)
• Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.5 dB TYP. @V
CE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
IC = 100 mA
• Supercompact Mini Mold Package
ORDERING INFORMATION
1.0
1.6±0.1
1
1.6±0.1
0.8±0.1
2
–0
+0.1
88
0.5
0.5
0.2
+0.1
3
–0
0.3
PART NUMBER
2SC5195 In-bulk products Embossed tape 8 mm wide.
2SC5195-T1 Taped products
QUANTITY PACKING STYLE
(50 pcs.) Pin 3 (Collector) face to perforation side of
the tape.
(3 Kpcs/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 100 mA
Total Power Dissipation PT 125 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
0.6
0.75±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0 to 0.1
–0.05
+0.1
0.15
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P10398EJ2V0DS00 (2nd edition)
(Previous No. TD-2488)
Date Published August 1995 P
Printed in Japan
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 100 nA
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 100 nA
DC Current Gain hFE VCE = 1 V, IC = 3 mA
Insertion Power Gain |S21e|2VCE = 1 V, IC = 3 mA, f = 2.0 GHz 3 4 dB
Insertion Power Gain (1) |S21e|2VCE = 3 V, IC = 20 mA, f = 2.0 GHz 8 dB
Noise Figure (2) NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz 1.7 2.5 dB
Noise Figure (1) NF VCE = 3 V, IC = 7 mA, f = 2.0 GHz 1.5 dB
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 3 mA, f = 2.0 GHz 4.5 5 GHz
Gain Bandwidth Product (1) fT VCE = 3 V, IC = 20 mA, f = 2.0 GHz 9.5 GHz
Collector Capacitance Cre VCB = 1 V, IE = 0, f = 1.0 MHz
Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty cycle ≤ 2 %, Pulsed
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
FE Classification
h
Note 1
Note 2
80 160
0.7 0.8 pF
2SC5195
Rank FB
Marking 88
hFE 80 to 160
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
2SC5195
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
(mW)
T
100
50
Total Power Dissipation P
050
Ambient Temperature T
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
25
(mA)
C
20
15
10
Collector Current I
5
0 2.5
Collector to Emitter Voltage V
Free Air
100 150
A
(°C)
200 A
µ
180 A
µ
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
IB = 20 A
µ
5
CE
(V)
7
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 1 V
10
(mA)
C
1
0.1
Collector Current I
0.01
0 0.5
Base to Emitter Voltage V
200
V
CE
= 1 V
FE
100
DC Current Gain h
0
0.1 10.2 2 20 5050.5
DC CURENT GAIN vs.
COLLECTOR CURRENT
10 100
Collector Current IC (mA)
1
BE
(V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 1 V
f = 2 GHz
(GHz)
10
T
5
Gain Bandwidth Product f
0
1
Collector Current I
723 5 10 20
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
f = 2 GHz
(dB)
2
|
10
21e
5
Insertion Power Gain |S
0
1
Collector Current I
723 5 10 20
C
(mA)
3
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