NEC 2SC5192R-T2, 2SC5192R-T1, 2SC5192R, 2SC5192-T2, 2SC5192-T1 Datasheet

©

1994

DATA SHEET

SILICON TRANSISTOR

FEATURES PACKAGE DRAWINGS

• Low Voltage Operation, Low Phase Distortion (Unit: mm)

• Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V

CE = 1 V, IC = 3 mA, f = 2 GHz

• Large Absolute Maximum Collector Current
IC = 100 mA

• 4-Pin Mini Mold Package
EIAJ: SC-61

ORDERING INFORMATION

PART NUMBER

QUANTITY PACKING STYLE

2SC5192-T1 3 Kpcs/Reel Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face to perforation
side of the tape.

2SC5192-T2 3 Kpcs/Reel Embossed tape 8 mm wide.

Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C

2SC5192

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

0 to 0.1

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter


2.9±0.2

T88

(1.9)

0.4

–0.05

+0.1

0.4

–0.05

+0.1

0.4

–0.05

+0.1

0.6

–0.05

+0.1

0.16

–0.06

+0.1

(1.8)

0.8

1.5

–0.1

+0.2

2.8

–0.3

+0.2

21

0.950.85

4

3

5˚ 5˚

5˚ 5˚

1.1

–0.1

+0.2

Document No. P10402EJ2V0DS00 (2nd edition)

(Previous No. TD-2485)
Date Published August 1995
Printed in Japan

2SC5192

2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 100 nA
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 100 nA
DC Current Gain hFE VCE = 1 V, IC = 3 mA

Note 1

80 160
Insertion Power Gain (1) |S21e|2VCE = 1 V, IC = 3 mA, f = 2.0 GHz 3 4.0 dB
Insertion Power Gain (2) |S21e|2VCE = 3 V, IC = 20 mA, f = 2.0 GHz 8 dB
Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz 1.7 2.5 dB
Noise Figure (2) NF VCE = 3 V, IC = 7 mA, f = 2.0 GHz 1.5 dB
Gain Bandwidth Product (1) fT VCE = 1 V, IC = 3 mA, f = 2.0 GHz 4 4.5 GHz
Gain Bandwidth Product (2) fT VCE = 3 V, IC = 20 mA, f = 2.0 GHz 9 GHz
Collector Capacitance Cre VCB = 1 V, IE = 0, f = 1.0 MHz

Note 2

0.65 0.8 pF

Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty cycle ≤ 2 %, Pulsed

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

h

FE Classification

Rank FB

Marking T88

hFE 80 to 160

2SC5192

3

050

Ambient Temperature T

A

(°C)

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

Free Air

Total Power Dissipation P

T

(mW)

100 150

100

200

01

2

3

4

5

67

Collector to Emitter Voltage V

CE

(V)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

Collector Current I

C

(mA)

10

20

30

200 A

µ

180 A

µ

160 A

µ

140 A

µ

120 A

µ

100 A

µ

80 A

µ

60 A

µ

40 A

µ

IB = 20 A

µ

0 0.5

Base to Emitter Voltage V

BE

(V)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

V

CE

= 1 V

Collector Current I

C

(mA)

1

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

10

20

100

50

0.1 10.2 2 20 5050.5
Collector Current I

C

(mA)

DC Current Gain h

FE

10 100

100

0

200

V

CE

= 1 V

DC CURENT GAIN vs.
COLLECTOR CURRENT

0

1

Collector Current I

C

(mA)

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT

f = 2 GHz

Gain Bandwidth Product f

T

(GHz)

10 20 502 5 100

11020502 5 100

2

4

6

8

10

0

2

4

6

8

10

Collector Current IC (mA)

INSERTION GAIN vs.
COLLECTOR CURRENT

Insertion Power Gain |S

21e

|

2

(dB)

VCE = 3 V

VCE = 1 V

f = 2 GHz

VCE = 3 V

VCE = 1 V

TYPICAL CHARACTERISTICS (TA = 25 °C)