NEC 2SC5191-T2, 2SC5191-T1, 2SC5191 Datasheet
DATA SHEET
SILICON TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
2SC5191
FEATURES
•Low Voltage Operation, Low Phase Distortion
•Low Noise
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
•Large Absolute Maximum Collector Current
IC = 100 mA
•Mini Mold Package
EIAJ: SC-59
ORDERING INFORMATION
PART
NUMBER
2SC5191-T1 3 Kpcs/Reel Embossed tape 8 mm wide.
2SC5191-T2 3 Kpcs/Reel Embossed tape 8 mm wide.
Remark
QUANTITY PACKING STYLE
Pin 3 (collector) face to perforation side of the tape.
Pin 1 (Emitter), Pin 2 (Base) face to perforation side
of the tape.
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
PACKAGE DRAWINGS
+0.1
−0.05
0.4
2
0.95
2.9±0.2
1.4
1.1 to
1
0.95
0.3
PIN CONNECTIONS
1.
Emitter
2.
Base
3.
Collector
2.8±0.2
T88
(Unit: mm)
3
+0.1
Marking
+0.1
0 to 0.1
0.651.5
−0.05
0.4
−0.06
0.16
+0.1
−0.15
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P10395EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
CBO
CEO
EBO
C
T
j
−
stg
65 to +150 °C
9V
6V
2V
100 mA
200 mW
°
150
C
1994©
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
2SC5191
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Insertion Power Gain (1)
Insertion Power Gain (2)
CBO
VCB = 5 V, IE = 0 100 nA
EBO
VEB = 1 V, IC = 0 100 nA
VCE = 1 V, IC = 3 mA
FE
2
21e
S
S
VCE = 1 V, IC = 3 mA, f = 2.0 GHz 2.5 3.5 dB
2
21e
VCE = 3 V, IC = 20 mA, f = 2.0 GHz 6.5 dB
Note 1
80 160
Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2.0 GHz 1.7 2.5 dB
Noise Figure (2) NF VCE = 3 V, IC = 7 mA, f = 2.0 GHz 1.5 dB
Gain Bandwidth Product (1) f
Gain Bandwidth Product (2) f
Collector Capacitance C
Notes 1.
FE
h
Pulse Measurement: PW ≤ 350
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
Classification
T
VCE = 1 V, IC = 3 mA, f = 2.0 GHz 4 4.5 GHz
T
VCE = 3 V, IC = 20 mA, f = 2.0 GHz 8.5 GHz
VCB = 1 V, IE = 0, f = 1.0 MHz
re
µ
s, Duty cycle ≤ 2 %, Pulsed
Note 2
0.75 0.85 pF
Rank FB
Marking T88
FE
h
80 to 160
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
2SC5191
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
(mW)
T
100
Total Power Dissipation P
50 100 1500
Ambient Temperature T
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
(mA)
C
20
10
Collector Current I
1234560
Collector to Emitter Voltage V
A
(°C)
Free Air
µ
200 A
180 A
µ
160 A
µ
µ
140 A
µ
120 A
100 A
µ
µ
80 A
60 A
µ
µ
40 A
B
= 20 A
I
CE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
CE
= 1 V
V
20
10
(mA)
5
C
2
1
0.5
0.2
0.1
Collector Current I
0.05
0.02
0.01
Base to Emitter Voltage V
0.5 1.00
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 1 V
FE
100
DC Current Gain h
µ
0
1 2 5 10 20 50 1000.1 0.2 0.5
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
f = 2 GHz
8
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
12 205 50 10010
Collector Current I
VCE = 3 V
VCE = 1 V
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
8
(dB)
2
|
21e
f = 2 GHz
6
VCE = 3 V
VCE = 1 V
4
2
Insertion Power Gain |S
0
1 2 5 10 20 50 100
C
Collector Current I
(mA)
3
2SC5191
NOISE FIGURE vs.
COLLECTOR CURRENT
5
f = 2 GHz
4
3
2
Noise Figure NF (dB)
1
0
12 5 2010 50 100
Collector Current I
VCE = 3 V
VCE = 1 V
C (mA)
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
40
30
(dB)
2
21e|
20
MAG
CE = 1 V
V
C = 3 mA
I
Feed-back Capacitance Cre (pF)
1.2
1.0
0.8
0.6
0.4
FEED-BACK CAPACITANCE vs.
COLECTOR TO BASE VOLTAGE
f = 1 MHz
2468100
Collector to Base Voltage V
CB (V)
10
0
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
0.1 0.50.2 1 2 5 10
|S21e|
2
Frequency f (GHz)
4
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