NEC 2SC5186-T1 Datasheet
DATA SHEET
SILICON TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB
TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
2SC5186 50 units/box Embossed tape, 8 mm wide,
2SC5186-T1 3 000 units/reel
QUANTITY ARRANGEMENT
Pin 3 (Collector) facing the perforations.
PACKAGE DIMENSIONS
(Units: mm)
1.6 ± 0.1
0.8 ± 0.1
2
+0.1
–0
0.2
86
3
0.5 0.5
1.0
1.6 ± 0.1
1
+0.1
–0
0.3
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current I
Total Power Dissipation PT 90 mW
Junction Temperature Tj 150 ˚ C
Storage Temperature T
C 30 mA
stg –65 to +150 ˚C
0.6
0.75 ± 0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0 to 0.1
+0.1
–0.05
0.15
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12110EJ2V0DS00 (2nd edition)
(Previous No. TC-2483)
Date Published November 1996 N
Printed in Japan
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector Cutoff Current ICBO 100 nA VCB = 5 V, IE = 0
Emitter Cutoff Current IEBO 100 nA VEB = 1 V, IC = 0
DC Current Gain hFE 70 140 VCE = 2 V, IC = 20 mA
Insertion Power Gain (1) |S21e|
Insertion Power Gain (2) |S21e|
Noise Figure (1) NF 1.3 2.0 dB VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2) NF 1.3 2.0 dB VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1) fT 911 GHzVCE = 2 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product (2) fT 79 GHzVCE = 1 V, IC = 10 mA, f = 2 GHz
Feed-back Capacitance Cre 0.4 0.8 pF VCB = 2 V, IE = 0 mA, f = 1 MHz
2
8.5 10 dB VCE = 2 V, IC = 20 mA, f = 2 GHz
2
6.0 7.5 dB VCE = 1 V, IC = 10 mA, f = 2 GHz
*1
*1 Measured with pulses: Pulse width ≤ 350 µs, duty clcye ≤ 2 %, pulsed.
*2 Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
2SC5186
*2
FE Class
h
Class FB
Marking 86
hFE 70 to 140
2
CHARACTERISTICS CURVES (TA = 25 ˚C)
2SC5186
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
100
90 mW
PT - Total Power Dissipation - mW
0
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
50
T
A - Ambient Temperature - ˚C
25
20
15
10
5
IC - Collector Current - mA
0
1.0 2.0 3.0
V
CE - Collector to Emitter Voltage - V
Passive air cooling
100 150
200 A
µ
180 A
µ
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
IB = 20 A
µ
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
CE = 2 V
V
40
30
20
10
IC - Collector Current - mA
0
BE - Base to Emitter Voltage - V
V
0.5 1.0
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
50
VCE = 2 V
VCE = 1 V
hFE - DC Current Gain
20
10
1 2 5 10 20 50 100
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
15
10
5
fT - Gain Bandwidth Product - GHz
1
2 3 5 7 10 20 30
I
C - Collector Current - mA
VCE = 2 V
VCE = 1 V
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
f = 2 GHz
10
5
- Insertion Power Gain - dB
2
|S21e|
0
12357102030
I
C - Collector Current - mA
VCE = 2 V
VCE = 1 V
3
2SC5186
NOISE FIGURE
vs. COLLECTOR CURRENT
3
2
VCE = 1 V
NF - Noise Figure - dB
1
VCE = 2 V
1
I
C
- Collector Current - mA
f = 2 GHz
2
35710 2030
FEED-BACK CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.8
0.6
0.4
0.2
- Feed-back Capacitance - pF
re
C
0.0
2.0 4.0 6.0 8.0 10.0
CB
- Collector to Base Voltage - V
V
f = 1 MHz
4
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