NEC 2SC5184-T2, 2SC5184-T1, 2SC5184 Datasheet
DATA SHEET
SILICON TRANSISTOR
2SC5184
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
• NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• NF = 1.3 dB
TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Super Mini-Mold package
EIAJ: SC-70
PACKAGE DIMENSIONS
(Units: mm)
2.1 ± 0.1
1.25 ± 0.1
ORDERING INFORMATION
PART
NUMBER
2SC5184-T1 3 000 units/reel Embossed tape, 8 mm wide,
2SC5184-T2 3 000 units/reel Embossed tape, 8 mm wide,
Remark: Contact your NEC sales representative to order samples for
evaluation (available in batches of 50).
QUANTITY ARRANGEMENT
Pin No. 3 (collector)
facing the perforations
Pins No. 1 (emitter) and No. 2 (base)
facing the perforations
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current I
Total Power Dissipation PT 90 mW
Junction Temperature Tj 150 ˚C
Storage Temperature T
C 30 mA
stg –65 to +150 ˚C
+0.1
–0
0.3
2.0 ± 0.2
0.65 0.65
0.3
0.9 ± 0.1
T86
2
1
0 to 0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
3
+0.1
–0
0.3
Marking
+0.1
–0.05
0.15
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12108EJ2V0DS00 (2nd edition)
(Previous No. TC-2481)
Date Published November 1996 N
Printed in Japan
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector Cutoff Current ICBO 100 nA VCB = 5 V, IE = 0
Emitter Cutoff Current IEBO 100 nA VEB = 1 V, IC = 0
DC Current Gain hFE 70 140 VCE = 2 V, IC = 20 mA
Insertion Power Gain (1) |S21e|
Insertion Power Gain (2) |S21e|
Noise Figure (1) NF 1.3 2.0 dB VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2) NF 1.3 2.0 dB VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1) fT 9 11 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product (2) fT 7 9 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance Cre 0.4 0.8 pF VCB = 2 V, IE = 0 mA, f = 1 MHz
2
2
7 8.5 dB VCE = 2 V, IC = 20 mA, f = 2 GHz
6 7.5 dB VCE = 1 V, IC = 10 mA, f = 2 GHz
*1 Measured with pulses: Pulse width ≤ 350 µs, duty clcye ≤ 2 %, pulsed.
*2 Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
*1
2SC5184
*2
FE Class
h
Class FB
Marking T86
hFE 70 to 140
2
CHARACTERISTICS CURVES (TA = 25 ˚C)
2SC5184
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
100
- Total Power Dissipation - mW
T
P
90 mW
0 50 100 150
A
- Ambient Temperature - °C
T
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 A
180 A
15
160 A
140 A
120 A
10
- Collector Current - mA
C
I
5
100 A
80 A
µ
60 A
µ
40 A
µ
IB = 20 A
0 1.0 2.0 3.0
VCE - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 2 V
40
30
20
- Collector Current - mA
10
C
I
0 0.5 1.0
BE
- Base to Emitter Voltage - V
V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
µ
µ
µ
µ
µ
µ
200
100
50
- DC Current Gain
FE
h
VCE = 2 V
VCE = 1 V
20
µ
10
1 2 5 10 20 50 100
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
f = 2 GHz
10
5
- Gain Bandwidth Product - dB
T
f
1 2 3 5 7 10
IC - Collector Current - mA
VCE = 2 V
VCE = 1 V
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
10
f = 2 GHz
5
- Insertion Power Gain - dB
2
|
21e
|S
0
1 2 3 5 7 10
IC - Collector Current - mA
VCE = 2 V
VCE = 1 V
3
2SC5184
NOISE FIGURE vs.
COLLECTOR CURRENT
3
2
VCE = 2 V
VCE = 1 V
NF - Noise Figure - dB
1
1235710
I
C
- Collector Current - mA
f = 2 GHz
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.8
f = 1 MHz
0.6
0.4
0.2
- Feedback Capacitance - pF
re
C
0 2.0 4.0 6.0 8.0 10.0
V
CB
- Collector to Base Voltage - V
4
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