NEC 2SC5015-T1, 2SC5015-T2 Datasheet
©
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10394EJ2V0DS00 (2nd edition)
(Previous No. TD-7938)
Date Published August 1995 P
Printed in Japan
2SC5015
FEATURES
• Small Package
• High Gain Bandwidth Product (fT = 12 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC5015-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) faceto
perforation side of the tape.
2SC5015-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) faceto
perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage V
EBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 150 mW
Junction Temperature T
i 150 ˚ C
Storage Temperature Tstg –65 to + 150 ˚ C
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
Caution: Electrostatic Sensitive Device
PACKAGE DIMENSIONS
in millimeters
T83
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
+0.1
–0.05
0.3
+0.1
–0.05
(1.3)
(1.25)
2.0 ± 0.2
0.650.60
23
1
4
0.3
+0.1
–0.05
0.4
+0.1
–0.05
0.9 ± 0.1
0.3
0 to 0.1 0.15
+0.1
–0.05
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
2SC5015
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Collector Cutoff Current ICBO 0.1
µ
AVCB = 5 V, IE = 0
Emitter Cutoff Current IEBO 0.1
µ
AVEB = 1 V, IC = 0
DC Current Gain hFE 75 150 VCE = 3 V, IC = 10 mA
*1
Gain Bandwidth Product fT 12 GHz VCE = 3 V, IC = 10 mA
Feed-back Capacitance Cre 0.3 0.5 pF VCB = 3 V, IE = 0, f = 1 MHz
*2
Insertion Power Gain |S21e|
2
911 dBVCE = 3 V, IC = 10 mA,
f = 2.0 GHz
Noise Figure NF 1.5 2.5 dB VCE = 3 V, IC = 3 mA,
f = 2.0 GHz
*1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE Classification
Rank KB
Marking T83
hFE 75 to 150
2SC5015
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
200
100
0 50 100 150
T
A
- Ambinet Temperatute - ˚C
P
T
- Total Power Dissipation - mW
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
40
0 0.5 1.0
V
BE
- Base to Emitter Voltafe - V
I
C
- Collector Current - mA
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
30
20
10
V
CE
= 3 V
30
024 8
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
12 50
I
C
- Collector Current - mA
h
FE
- DC Current Gain
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
V
CE
= 3 V
22050
I
C
- Collector Current - mA
f
T
- Gain Bandwidth Product - GHz
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
10
6
IB = 200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
VCE = 3 V
f = 2 GHz
IC - Collector Current - mA
| S
21a
|
2
- Insertion Power Gain - dB
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
f = 2 GHz
200
100
50
20
10
51020
14
12
10
8
6
4
2
0
1 5 10 2 20 50
12
0
1510
10
8
6
4
2
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